公开(公告)号：US20140097534A1

公开(公告)日：2014-04-10

申请号：US13736088

申请日：2013-01-08

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Jing-Yao Chang ,  Tao-Chih Chang ,  Tung-Han Chuang ,  Chun-Yen Lee

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/49811 ,  H01L21/76885 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29005 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/83065 ,  H01L2224/8309 ,  H01L2224/83091 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2924/206 ,  H01L2924/00014

Abstract: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.

Abstract translation: 提供了一种双相金属间互连结构及其制造方法。 双相金属间互连结构包括第一金属间化合物，第二金属间化合物，第一焊料层和第二焊料层。 第二金属间化合物覆盖并围绕第一金属间化合物。 第一金属间化合物和第二金属间化合物含有不同的高熔点金属。 第一焊料层和第二焊料层分别设置在第二金属间化合物的相对侧。 第一金属间化合物适于填充在形成第二金属间化合物期间产生的微孔缺陷。

公开(公告)号：US20140175495A1

公开(公告)日：2014-06-26

申请号：US13901816

申请日：2013-05-24

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Tung-Han Chuang ,  Jian-Shian Lin ,  Ying-Tsun Su ,  Meng-Chi Huang

IPC: H01L33/48

CPC classification number: H01L33/0079 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05687 ,  H01L2224/29082 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83193 ,  H01L2224/83409 ,  H01L2224/83411 ,  H01L2224/83825 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00

Abstract: A die bonding method and a die bonding structure of a light emitting diode package are provided. The die bonding structure includes a light transmissive adhesive layer formed on a surface of a base plate of a light emitting diode chip, a first metal layer formed on the adhesive layer, a second metal layer formed on a packaging base plate and multiple metallic compound layers. The metallic compound layers are formed by spreading a third metal layer disposed on at least one of the first metal layer and the second metal layer into the first metal layer and the second metal layer after the third metal layer is heated up. The melting points of the first metal layer and the second metal layer are higher than the melting point of the third metal layer.

Abstract translation: 提供了一种发光二极管封装的管芯接合方法和管芯接合结构。 芯片接合结构包括形成在发光二极管芯片的基板的表面上的透光粘合剂层，在粘合剂层上形成的第一金属层，形成在封装基板上的第二金属层和多个金属化合物层 。 金属化合物层通过在第三金属层被加热之后将设置在第一金属层和第二金属层中的至少一个上的第三金属层扩散到第一金属层和第二金属层中而形成。 第一金属层和第二金属层的熔点高于第三金属层的熔点。

公开(公告)号：US08742600B2

公开(公告)日：2014-06-03

申请号：US13736088

申请日：2013-01-08

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yao Chang ,  Tao-Chih Chang ,  Tung-Han Chuang ,  Chun-Yen Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/49811 ,  H01L21/76885 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29005 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/83065 ,  H01L2224/8309 ,  H01L2224/83091 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2924/206 ,  H01L2924/00014

Abstract: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.

Abstract translation: 提供了一种双相金属间互连结构及其制造方法。 双相金属间互连结构包括第一金属间化合物，第二金属间化合物，第一焊料层和第二焊料层。 第二金属间化合物覆盖并围绕第一金属间化合物。 第一金属间化合物和第二金属间化合物含有不同的高熔点金属。 第一焊料层和第二焊料层分别设置在第二金属间化合物的相对侧。 第一金属间化合物适于填充在形成第二金属间化合物期间产生的微孔缺陷。