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1.
公开(公告)号:US10304686B2
公开(公告)日:2019-05-28
申请号:US15476842
申请日:2017-03-31
Applicant: INTEL CORPORATION
Inventor: Sasha N. Oster , Fay Hua , Telesphor Kamgaing , Adel A. Elsherbini , Henning Braunisch , Johanna M. Swan
IPC: H01L21/4763 , H01L21/285 , H01L21/768 , H01L21/033 , B82Y40/00
Abstract: Embodiments include devices and methods, including a method for processing a substrate. The method includes providing a substrate including a first portion and a second portion, the first portion including a feature, the feature including an electrically conductive region, the second portion including a dielectric surface region. The method also includes performing self-assembled monolayer (SAM) assisted structuring plating to form a structure comprising a metal on the dielectric surface region, the feature being formed using a process other than the SAM assisted structuring plating used to form the structure, and the structure being formed after the feature. Other embodiments are described and claimed.
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公开(公告)号:US10697065B2
公开(公告)日:2020-06-30
申请号:US15769699
申请日:2016-08-08
Applicant: Intel Corporation
Inventor: Fay Hua , Aranzazu Maestre Caro
Abstract: A method including activating an area of a polymer layer on a substrate with electromagnetic radiation; modifying the activated area; forming a self-assembled monolayer on the modified active area; reacting the self-assembled monolayer with the self-assembled monolayer; and reacting the self-assembled monolayer with a conductive material. A method including activating an area of a polymer dielectric layer on a substrate with electromagnetic radiation, the area selected for an electrically conductive line; modifying the activated area; forming a self-assembled monolayer on the modified active area; reacting the self-assembled monolayer with a catalyst; and electroless plating a conductive material on the self-assembled monolayer.
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公开(公告)号:US10304804B2
公开(公告)日:2019-05-28
申请号:US15476872
申请日:2017-03-31
Applicant: INTEL CORPORATION
Inventor: Fay Hua , Telesphor Kamgaing , Johanna M. Swan
IPC: H01L25/065 , H01L23/00 , H01L23/29 , H01L21/02 , H01L25/00 , H01L23/31 , H01L23/48 , H01L23/66 , H01L23/64
Abstract: Embodiments include devices and methods, including a device including a substrate comprising a semiconductor, the substrate including a front side comprising active elements and a backside opposite the front side. The device includes a dielectric layer on the backside, and a passive component on the dielectric layer on the backside. In certain embodiments, the passive device is formed on a self-assembled monolayer (SAM). Other embodiments are described and claimed.
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公开(公告)号:US11222863B2
公开(公告)日:2022-01-11
申请号:US16080989
申请日:2016-04-01
Applicant: Intel Corporation
Inventor: Fay Hua , Christopher M. Pelto , Valluri R. Rao , Mark T. Bohr , Johanna M. Swan
IPC: H01L23/00 , H01L21/02 , H01L21/768 , H01L21/78 , H01L25/065 , H01L25/00
Abstract: Embodiments of the present disclosure describe techniques for fabricating a stacked integrated circuit (IC) device. A first wafer that includes a plurality of first IC dies may be sorted to identify first known good dies of the plurality of first IC dies. The first wafer may be diced to singulate the first IC dies. A second wafer that includes a plurality of second IC dies may be sorted to identify second know good dies of the plurality of second IC dies. The first known good dies may be bonded to respective second known good dies of the second wafer. In some embodiments, the first known good dies may be thinned after bonding the first know good dies to the second wafer. Other embodiments may be described and/or claimed.
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5.
公开(公告)号:US10734236B2
公开(公告)日:2020-08-04
申请号:US16399703
申请日:2019-04-30
Applicant: INTEL CORPORATION
Inventor: Sasha N. Oster , Fay Hua , Telesphor Kamgaing , Adel A. Elsherbini , Henning Braunisch , Johanna M. Swan
IPC: H01L21/4763 , H01L21/285 , H01L21/768 , H01L21/033 , B82Y40/00 , H01L23/66 , H01L25/16 , H05K1/16 , H05K3/28 , H01L23/538 , H01L21/48 , H05K1/02 , H05K3/34
Abstract: Embodiments include devices and methods, including a method for processing a substrate. The method includes providing a substrate including a first portion and a second portion, the first portion including a feature, the feature including an electrically conductive region, the second portion including a dielectric surface region. The method also includes performing self-assembled monolayer (SAM) assisted structuring plating to form a structure comprising a metal on the dielectric surface region, the feature being formed using a process other than the SAM assisted structuring plating used to form the structure, and the structure being formed after the feature. Other embodiments are described and claimed.
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公开(公告)号:US10595410B2
公开(公告)日:2020-03-17
申请号:US15283352
申请日:2016-10-01
Applicant: Intel Corporation
Inventor: Fay Hua , Brandon M. Rawlings , Georgios C. Dogiamis , Telesphor Kamgaing
IPC: H05K1/16 , H01L21/48 , H01L23/498 , H01L25/16 , H05K1/11 , H05K3/42 , H05K3/00 , H05K3/38 , H05K3/40
Abstract: Embodiments are generally directed to non-planar on-package via capacitor. An embodiment of an embedded capacitor includes a first plate that is formed in a package via; a dielectric layer that is applied on the first plate; and a second plate that is formed in a cavity in the dielectric layer, wherein the first plate and the second plate are non-planar plates.
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公开(公告)号:US20200082969A1
公开(公告)日:2020-03-12
申请号:US16616387
申请日:2017-06-28
Applicant: Intel Corporation
Inventor: Fay Hua , Sidharth Dalmia , Zhichao Zhang
IPC: H01F27/28 , H01L23/522 , H01L23/498 , H01L23/58 , H01L21/48 , H01L23/00 , H01F41/04
Abstract: An apparatus is provided which comprises: a planar dielectric surface, two or more conductive leads on the surface, the conductive leads extending away from the substrate surface, two or more conductive traces on the surface between the conductive leads, the traces substantially parallel to each other, and a wire coupling a first end of a first conductive trace to an opposite end of an adjacent second conductive trace, the wire extending away from the surface. Other embodiments are also disclosed and claimed.
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公开(公告)号:US10321573B2
公开(公告)日:2019-06-11
申请号:US15855808
申请日:2017-12-27
Applicant: INTEL CORPORATION
Inventor: Fay Hua , Hong Xie , Gregorio R. Murtagian , Amit Abraham , Alan C. McAllister , Ting Zhong
Abstract: Embodiments of the present disclosure are directed towards techniques and configurations to provide solder contacts for electrical connection in socket assemblies. In one embodiment, a solder contact may be disposed on the bottom surface of a die package such that the solder contact is conductively coupled to electrical contacts of the die package. The solder contacts may be disposed to be coupled to pins of a socket assembly, to provide conductive coupling of the electrical contacts of the die package and the pins of the socket assembly. The solder may be selected to be sufficiently soft to provide for better electrical conduction. The pins may also be configured to penetrate the solder contact to provide for better electrical conduction. Other embodiments may be described and/or claimed.
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公开(公告)号:US09860988B2
公开(公告)日:2018-01-02
申请号:US14780501
申请日:2014-12-20
Applicant: INTEL CORPORATION
Inventor: Fay Hua , Hong Xie , Gregorio R. Murtagian , Amit Abraham , Alan C. Mcallister , Ting Zhong
CPC classification number: H05K1/181 , H01L23/49811 , H01L23/49816 , H01L2224/00 , H01R12/52 , H01R33/7607 , H05K3/3421 , H05K3/4007 , H05K2201/10719
Abstract: Embodiments of the present disclosure are directed towards techniques and configurations to provide solder contacts for electrical connection in socket assemblies. In one embodiment, a solder contact may be disposed on the bottom surface of a die package such that the solder contact is conductively coupled to electrical contacts of the die package. The solder contacts may be disposed to be coupled to pins of a socket assembly, to provide conductive coupling of the electrical contacts of the die package and the pins of the socket assembly. The solder may be selected to be sufficiently soft to provide for better electrical conduction. The pins may also be configured to penetrate the solder contact to provide for better electrical conduction. Other embodiments may be described and/or claimed.
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公开(公告)号:US11282633B2
公开(公告)日:2022-03-22
申请号:US16616387
申请日:2017-06-28
Applicant: Intel Corporation
Inventor: Fay Hua , Sidharth Dalmia , Zhichao Zhang
IPC: H01F27/28 , H01F41/04 , H01L21/48 , H01L23/498 , H01L23/522 , H01L23/58 , H01L23/00
Abstract: An apparatus is provided which comprises: a planar dielectric surface, two or more conductive leads on the surface, the conductive leads extending away from the substrate surface, two or more conductive traces on the surface between the conductive leads, the traces substantially parallel to each other, and a wire coupling a first end of a first conductive trace to an opposite end of an adjacent second conductive trace, the wire extending away from the surface. Other embodiments are also disclosed and claimed.
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