公开(公告)号：US09934859B1

公开(公告)日：2018-04-03

申请号：US15391763

申请日：2016-12-27

Applicant: INTEL CORPORATION

Inventor： Muthukumar P. Swaminathan ,  Zion S. Kwok ,  Prashant S. Damle ,  Kunal A. Khochare ,  Philip Hillier ,  Jeffrey W. Ryden ,  Richard P. Mangold

IPC: G11C16/10 ,  G11C16/26

CPC classification number: G11C16/10 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028

Abstract: In response to a write operation on a storage element in a non-volatile memory device, a count provided by a global counter is stored to indicate a time at which the write operation occurs on the storage element. In response to receiving a request perform a read operation on the storage element, a determination is made of a demarcation voltage to apply for performing the read operation on the storage element, based on a progress of the global counter since the write operation on the storage element.

公开(公告)号：US11188264B2

公开(公告)日：2021-11-30

申请号：US16780632

申请日：2020-02-03

Applicant: Intel Corporation

Inventor： Shekoufeh Qawami ,  Philip Hillier ,  Benjamin Graniello ,  Rajesh Sundaram

IPC: G06F3/06

Abstract: A memory system includes a nonvolatile (NV) memory device with asymmetry between intrinsic read operation delay and intrinsic write operation delay. The system can select to perform memory access operations with the NV memory device with the asymmetry, in which case write operations have a lower delay than read operations. The system can alternatively select to perform memory access operations with the NV memory device where a configured write operation delay that matches the read operation delay.

公开(公告)号：US10310989B2

公开(公告)日：2019-06-04

申请号：US15721379

申请日：2017-09-29

Applicant: INTEL CORPORATION

Inventor： Philip Hillier ,  Jeffrey W. Ryden ,  Muthukumar P. Swaminathan ,  Zion S. Kwok ,  Kunal A. Khochare ,  Richard P. Mangold ,  Prashant S. Damle

IPC: G06F12/126 ,  G06F12/02 ,  G11C7/22

Abstract: One embodiment provides a memory controller. The memory controller includes a memory controller memory; a timestamp circuitry and a demarcation voltage (VDM) selection circuitry. The timestamp circuitry is to capture a current timer index from a timer circuitry in response to an initiation of a periodic patrol scrub and to compare the current timer index to a stored timestamp. The VDM selection circuitry is to update a state of a sub-block of a memory array, if the state is less than a threshold and a difference between the current timer index and the stored timestamp is nonzero. The timestamp circuitry is further to store the current timer index as a new timestamp.

公开(公告)号：US20190102320A1

公开(公告)日：2019-04-04

申请号：US15721379

申请日：2017-09-29

Applicant: INTEL CORPORATION

Inventor： Philip Hillier ,  Jeffrey W. Ryden ,  Muthukumar P. Swaminathan ,  Zion S. Kwok ,  Kunal A. Khochare ,  Richard P. Mangold ,  Prashant S. Damle

IPC: G06F12/126 ,  G06F12/02 ,  G11C7/22

Abstract: One embodiment provides a memory controller. The memory controller includes a memory controller memory; a timestamp circuitry and a demarcation voltage (VDM) selection circuitry. The timestamp circuitry is to capture a current timer index from a timer circuitry in response to an initiation of a periodic patrol scrub and to compare the current timer index to a stored timestamp. The VDM selection circuitry is to update a state of a sub-block of a memory array, if the state is less than a threshold and a difference between the current timer index and the stored timestamp is nonzero. The timestamp circuitry is further to store the current timer index as a new timestamp.

公开(公告)号：US09691492B1

公开(公告)日：2017-06-27

申请号：US15280669

申请日：2016-09-29

Applicant: INTEL CORPORATION

Inventor： Bruce Querbach ,  Zion S. Kwok ,  Christopher F. Connor ,  Philip Hillier ,  Jeffrey W. Ryden

IPC: G11C5/14 ,  G11C16/28 ,  G11C16/10 ,  G11C16/30

CPC classification number: G11C16/28 ,  G11C16/10 ,  G11C16/20 ,  G11C16/30

Abstract: A predetermined pattern of bits is written to a non-volatile memory device prior to powering down the non-volatile memory device. A plurality of voltages are applied to the non-volatile memory device to determine which voltage of the plurality of voltages allows the predetermined pattern of bits to be read with a least amount of error. The determined voltage is set to be a demarcation voltage for reading from the non-volatile memory device.