Technologies for column-based data layouts for clustered data systems

    公开(公告)号:US11327881B2

    公开(公告)日:2022-05-10

    申请号:US15930889

    申请日:2020-05-13

    Abstract: Technologies for media management for providing column data layouts for clustered data include a device having a column-addressable memory and circuitry connected to the memory. The circuitry is configured to store a data cluster of a logical matrix in the column-addressable memory with a column-based format and to read a logical column of the data cluster from the column-addressable memory with a column read operation. Reading the logical column may include reading logical column data diagonally from the column-address memory, including reading from the data cluster and a duplicate copy of the data cluster. Reading the logical column may include reading from multiple complementary logical columns. Reading the logical column may include reading logical column data diagonally with a modulo counter. The column data may bread from a partition of the column-address memory selected based on the logical column number. Other embodiments are described and claimed.

    Configurable write command delay in nonvolatile memory

    公开(公告)号:US11188264B2

    公开(公告)日:2021-11-30

    申请号:US16780632

    申请日:2020-02-03

    Abstract: A memory system includes a nonvolatile (NV) memory device with asymmetry between intrinsic read operation delay and intrinsic write operation delay. The system can select to perform memory access operations with the NV memory device with the asymmetry, in which case write operations have a lower delay than read operations. The system can alternatively select to perform memory access operations with the NV memory device where a configured write operation delay that matches the read operation delay.

    Write data mask for power reduction

    公开(公告)号:US10541009B2

    公开(公告)日:2020-01-21

    申请号:US15857349

    申请日:2017-12-28

    Abstract: Devices, systems, and methods having increased efficiency selective writing to memory are disclosed and described. A memory controller, upon receiving a dirty data segment, performs a read-modify-write to retrieve a corresponding data line from memory, saves a copy of the data line, merges the dirty data segment into the appropriate location in the data line to create a modified data line, and generates a write mask from the modified data line and the copy of the data line.

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