公开(公告)号：US20200020787A1

公开(公告)日：2020-01-16

申请号：US16568780

申请日：2019-09-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L29/417 ,  H01L23/485 ,  H01L29/49 ,  H01L21/311

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20200006655A1

公开(公告)日：2020-01-02

申请号：US16019798

申请日：2018-06-27

Applicant: International Business Machines Corporation

Inventor： Hao TANG ,  Michael RIZZOLO ,  Injo OK ,  Theodorus E. STANDAERT

IPC: H01L45/00 ,  H01L23/544 ,  H01L27/24

Abstract: An intermediate semiconductor device structure includes a first area including a memory stack area and a second area including an alignment mark area. The intermediate structure includes a metal interconnect arranged on a substrate in the first area and a first electrode layer arranged on the metal interconnect in the first area, and in the second area. The intermediate structure includes an alignment assisting marker arranged in the second area. The intermediate structure includes a dielectric layer and a second electrode layer arranged on the alignment assisting marker in the second area and on the metal interconnect in the first area. The intermediate structure includes a hard mask layer arranged on the second electrode area. The hard mask layer provides a raised area of topography over the alignment assisting marker. The intermediate structure includes a resist arranged on the hard mask layer in the first area.

公开(公告)号：US20190181242A1

公开(公告)日：2019-06-13

申请号：US16266709

申请日：2019-02-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L23/485 ,  H01L23/535 ,  H01L21/311 ,  H01L23/532 ,  H01L21/768 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L29/66545 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/785 ,  H01L29/7851 ,  H05K999/99

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20190181049A1

公开(公告)日：2019-06-13

申请号：US16265110

申请日：2019-02-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L21/762 ,  H01L29/06 ,  H01L21/306 ,  H01L21/02 ,  H01L29/417 ,  H01L29/78 ,  H01L21/324

Abstract: FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.

公开(公告)号：US20180053854A1

公开(公告)日：2018-02-22

申请号：US15784366

申请日：2017-10-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L29/66 ,  H01L23/535

CPC classification number: H01L29/7851 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20180047827A1

公开(公告)日：2018-02-15

申请号：US15796036

申请日：2017-10-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L21/768 ,  H01L23/535 ,  H01L29/78 ,  H01L21/311

CPC classification number: H01L29/7851 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20170084683A1

公开(公告)日：2017-03-23

申请号：US15260682

申请日：2016-09-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L49/02

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to Metal-Insulator-Metal (MIM) capacitor structures and methods of manufacture. The method includes: forming at least one gate structure; removing material from the at least one gate structure to form a trench; depositing capacitor material within the trench and at an edge or outside of the trench; and forming a first contact in contact with a first conductive material of the capacitor material and a second contact in contact with a second conductive material of the capacitor material.

公开(公告)号：US20200083426A1

公开(公告)日：2020-03-12

申请号：US16127384

申请日：2018-09-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chih-Chao YANG ,  Daniel C. EDELSTEIN ,  Bruce B. DORIS ,  Henry K. UTOMO ,  Theodorus E. STANDAERT ,  Nathan P. MARCHACK

IPC: H01L43/02 ,  H01L43/12 ,  H01L21/768 ,  H01L27/22

Abstract: Back end of line (BEOL) metallization structures and methods generally includes forming a landing pad on an interconnect structure. A multilayer structure including layers of metals and at least one insulating layer are provided on the structure and completely cover the landing pad. The landing pad is a metal-filled via and has a width dimension that is smaller than the multilayer structure, or the multilayer structure and the underlying metal conductor in the interconnect structure. The landing pad metal-filled via can have a width dimension that is sub-lithographic.

公开(公告)号：US20190140098A1

公开(公告)日：2019-05-09

申请号：US16240277

申请日：2019-01-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L23/485 ,  H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L21/311

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20170236918A1

公开(公告)日：2017-08-17

申请号：US15583170

申请日：2017-05-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L23/535 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L29/7851 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.