公开(公告)号：US20200020787A1

公开(公告)日：2020-01-16

申请号：US16568780

申请日：2019-09-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L29/417 ,  H01L23/485 ,  H01L29/49 ,  H01L21/311

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20190341348A1

公开(公告)日：2019-11-07

申请号：US16514333

申请日：2019-07-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Ali KHAKIFIROOZ ,  Juntao LI

IPC: H01L23/525 ,  H01L49/02 ,  H01L29/66 ,  H01L23/535 ,  H01L23/532 ,  H01L27/06 ,  H01H69/02 ,  H01C17/00 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/3105 ,  H01L29/49 ,  H01L23/522

Abstract: Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

公开(公告)号：US20190181242A1

公开(公告)日：2019-06-13

申请号：US16266709

申请日：2019-02-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L23/485 ,  H01L23/535 ,  H01L21/311 ,  H01L23/532 ,  H01L21/768 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L29/66545 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/785 ,  H01L29/7851 ,  H05K999/99

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20190181049A1

公开(公告)日：2019-06-13

申请号：US16265110

申请日：2019-02-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L21/8234 ,  H01L29/66 ,  H01L27/088 ,  H01L21/762 ,  H01L29/06 ,  H01L21/306 ,  H01L21/02 ,  H01L29/417 ,  H01L29/78 ,  H01L21/324

Abstract: FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.

公开(公告)号：US20180053854A1

公开(公告)日：2018-02-22

申请号：US15784366

申请日：2017-10-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L29/66 ,  H01L23/535

CPC classification number: H01L29/7851 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20180047827A1

公开(公告)日：2018-02-15

申请号：US15796036

申请日：2017-10-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L21/768 ,  H01L23/535 ,  H01L29/78 ,  H01L21/311

CPC classification number: H01L29/7851 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20170221822A1

公开(公告)日：2017-08-03

申请号：US15487858

申请日：2017-04-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Ali KHAKIFIROOZ ,  Juntao LI

IPC: H01L23/525 ,  H01L23/532 ,  H01L21/311 ,  H01L29/49 ,  H01L29/66 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/06

CPC classification number: H01L23/5256 ,  H01C17/006 ,  H01H69/022 ,  H01L21/31051 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/823437 ,  H01L21/823475 ,  H01L23/5228 ,  H01L23/5329 ,  H01L23/535 ,  H01L27/0617 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66545

Abstract: Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

公开(公告)号：US20170084683A1

公开(公告)日：2017-03-23

申请号：US15260682

申请日：2016-09-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L49/02

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to Metal-Insulator-Metal (MIM) capacitor structures and methods of manufacture. The method includes: forming at least one gate structure; removing material from the at least one gate structure to form a trench; depositing capacitor material within the trench and at an edge or outside of the trench; and forming a first contact in contact with a first conductive material of the capacitor material and a second contact in contact with a second conductive material of the capacitor material.

公开(公告)号：US20170047288A1

公开(公告)日：2017-02-16

申请号：US15333742

申请日：2016-10-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Ali KHAKIFIROOZ ,  Juntao LI

IPC: H01L23/525 ,  H01L23/535 ,  H01L49/02 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5256 ,  H01C17/006 ,  H01H69/022 ,  H01L21/31051 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/823437 ,  H01L21/823475 ,  H01L23/5228 ,  H01L23/5329 ,  H01L23/535 ,  H01L27/0617 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66545

Abstract: Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

公开(公告)号：US20140264595A1

公开(公告)日：2014-09-18

申请号：US13828283

申请日：2013-03-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Bruce DORIS ,  Ali KHAKIFIROOZ ,  Tenko YAMASHITA ,  Chun-chen YEH

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/785 ,  H01L29/7855

Abstract: Various embodiments form strained and relaxed silicon and silicon germanium fins on a semiconductor wafer. In one embodiment a semiconductor wafer is formed. The semiconductor wafer comprises a substrate, a dielectric layer, and a strained silicon germanium (SiGe) layer. At least one region of the strained SiGe layer is transformed into a relaxed SiGe region. At least one strained SiGe fin is formed from a first strained SiGe region of the strained SiGe layer. At least one relaxed SiGe fin is formed from a first portion of the relaxed SiGe region. Relaxed silicon is epitaxially grown on a second strained SiGe region of the strained SiGe layer. Strained silicon is epitaxially grown on a second portion of the relaxed SiGe region. At least one relaxed silicon fin is formed from the relaxed silicon. At least one strained silicon fin is formed from the strained silicon.

Abstract translation: 各种实施例在半导体晶片上形成应变和松弛的硅和锗锗翅片。 在一个实施例中，形成半导体晶片。 半导体晶片包括衬底，电介质层和应变硅锗（SiGe）层。 应变SiGe层的至少一个区域被转化为松弛的SiGe区域。 至少一个应变SiGe鳍由应变SiGe层的第一应变SiGe区形成。 从弛豫SiGe区域的第一部分形成至少一个松弛的SiGe鳍。 在应变SiGe层的第二应变SiGe区域外延生长弛豫硅。 应变硅在弛豫SiGe区域的第二部分外延生长。 从松散的硅形成至少一个松散的硅散热片。 从应变硅形成至少一个应变硅翅片。