公开(公告)号：US20200167331A1

公开(公告)日：2020-05-28

申请号：US16776690

申请日：2020-01-30

Applicant: International Business Machines Corporation

Inventor： Fee Li LIE ,  Shogo MOCHIZUKI ,  Junli WANG

IPC: G06F16/23 ,  G06F9/455 ,  G06F11/14 ,  G06F16/188 ,  G06F16/16 ,  G06F16/13

Abstract: A semiconductor device includes a source/drain (S/D) region, a fin structure formed on the S/D region, and a gate structure formed on the fin structure so that a space is formed between the S/D region and the gate structure.

公开(公告)号：US20200091314A1

公开(公告)日：2020-03-19

申请号：US16668496

申请日：2019-10-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/311 ,  H01L29/49 ,  H01L23/485 ,  H01L29/417 ,  H01L23/532 ,  H01L23/535 ,  H01L29/78

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20190214456A1

公开(公告)日：2019-07-11

申请号：US16359292

申请日：2019-03-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Christopher J. PENNY ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L49/02 ,  H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/311

CPC classification number: H01L28/88 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/53228 ,  H01L28/60 ,  H01L28/82

Abstract: Back end of the line (BEOL) capacitors and methods of manufacture are provided. The method includes forming wiring lines on a substrate, with spacing between adjacent wiring lines. The method further includes forming an air gap within spacing between the adjacent wiring lines by deposition of a capping material. The method further includes opening the air gap between selected adjacent wiring lines. The method further includes depositing conductive material within the opened air gap.

公开(公告)号：US20190148554A1

公开(公告)日：2019-05-16

申请号：US16245861

申请日：2019-01-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L23/485 ,  H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L21/311

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20180076094A1

公开(公告)日：2018-03-15

申请号：US15813277

申请日：2017-11-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/823481 ,  H01L21/02636 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76224 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/6653 ,  H01L29/785

Abstract: FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.

公开(公告)号：US20170084684A1

公开(公告)日：2017-03-23

申请号：US15260688

申请日：2016-09-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L27/11582 ,  H01L28/00 ,  H01L28/87 ,  H01L28/88 ,  H01L28/91 ,  H01L28/92

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to Metal-Insulator-Metal (MIM) capacitor structures and methods of manufacture. The method includes: forming at least one gate structure; removing material from the at least one gate structure to form a trench; depositing capacitor material within the trench and at an edge or outside of the trench; and forming a first contact in contact with a first conductive material of the capacitor material and a second contact in contact with a second conductive material of the capacitor material.

公开(公告)号：US20190140098A1

公开(公告)日：2019-05-09

申请号：US16240277

申请日：2019-01-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L23/485 ,  H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L21/311

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20180033868A1

公开(公告)日：2018-02-01

申请号：US15716690

申请日：2017-09-27

Applicant: International Business Machines Corporation

Inventor： Brent A. ANDERSON ,  Huiming BU ,  Terence B. HOOK ,  Fee Li LIE ,  Junli WANG

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/45 ,  H01L29/78

CPC classification number: H01L29/66666 ,  H01L21/823425 ,  H01L29/0847 ,  H01L29/456 ,  H01L29/6653 ,  H01L29/7827

Abstract: A vertical fin field-effect-transistor and a method for fabricating the same. The vertical fin field-effect-transistor includes at least a substrate, a first source/drain layer, and a plurality of fins each disposed on and in contact with the first source/drain layer. Silicide regions are disposed within a portion of the first source/drain layer. A gate structure is in contact with the plurality of fins, and a second source/drain layer is disposed on the gate structure. The method includes forming silicide in a portion of a first source/drain layer. A first spacer layer is formed in contact with at least the silicide, the first source/drain layer and the plurality of fins. A gate structure is formed in contact with the plurality of fins and the first spacer layer. A second spacer layer is formed in contact with the gate structure and the plurality of fins.

公开(公告)号：US20170236918A1

公开(公告)日：2017-08-17

申请号：US15583170

申请日：2017-05-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L29/78 ,  H01L23/535 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L29/7851 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.

公开(公告)号：US20160380070A1

公开(公告)日：2016-12-29

申请号：US15260668

申请日：2016-09-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Veeraraghavan S. BASKER ,  Kangguo CHENG ,  Theodorus E. STANDAERT ,  Junli WANG

IPC: H01L29/66 ,  H01L21/768 ,  H01L29/78 ,  H01L23/532 ,  H01L23/535

CPC classification number: H01L29/7851 ,  H01L21/31111 ,  H01L21/76805 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53257 ,  H01L23/535 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method includes forming a replacement metal gate structure in a dielectric material. The replacement metal gate structure is formed with a lower spacer and an upper spacer above the lower spacer. The upper spacer having material is different than material of the lower spacer. The method further includes forming a self-aligned contact adjacent to the replacement metal gate structure by patterning an opening within the dielectric material and filling the opening with contact material. The upper spacer prevents shorting with the contact material.