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1.发明申请公开(公告)号：US20150243592A1
公开(公告)日：2015-08-27
申请号：US14709562
申请日：2015-05-12
发明人： Rudolf Zelsacher , Paul Ganitzer
IPC分类号： H01L23/498 , H01L21/768 , H01L21/48 , H01L21/78
CPC分类号： H01L23/49811 , H01L21/4853 , H01L21/6835 , H01L21/76873 , H01L21/78 , H01L23/3107 , H01L23/3736 , H01L23/492 , H01L23/49575 , H01L23/49838 , H01L23/49866 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/48 , H01L24/73 , H01L29/0657 , H01L2221/68327 , H01L2221/6834 , H01L2221/6835 , H01L2224/03002 , H01L2224/03009 , H01L2224/0345 , H01L2224/03462 , H01L2224/0362 , H01L2224/03622 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05214 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/0603 , H01L2224/06181 , H01L2224/291 , H01L2224/32225 , H01L2224/3223 , H01L2224/48091 , H01L2224/48227 , H01L2224/4823 , H01L2224/73265 , H01L2224/8382 , H01L2224/94 , H01L2924/00014 , H01L2924/01014 , H01L2924/01068 , H01L2924/01078 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/14 , H01L2924/15153 , H01L2924/181 , Y02P80/30 , H01L2224/45099 , H01L2224/03 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.
摘要翻译： 公开了半导体器件的制造方法。 在一个实施例中，提供具有第一表面，与第一表面相对的第二表面和多个半导体部件的半导体衬底。 半导体衬底具有器件厚度。 在半导体衬底的第二表面上形成至少一个金属化层。 金属化层的厚度大于器件厚度。
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公开(公告)号：US09030028B2
公开(公告)日：2015-05-12
申请号：US14295791
申请日：2014-06-04
发明人： Rudolf Zelsacher , Paul Ganitzer
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/00 , H01L21/683 , H01L21/78 , H01L23/492 , H01L23/498 , H01L29/06 , H01L23/31
CPC分类号： H01L23/49811 , H01L21/4853 , H01L21/6835 , H01L21/76873 , H01L21/78 , H01L23/3107 , H01L23/3736 , H01L23/492 , H01L23/49575 , H01L23/49838 , H01L23/49866 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/48 , H01L24/73 , H01L29/0657 , H01L2221/68327 , H01L2221/6834 , H01L2221/6835 , H01L2224/03002 , H01L2224/03009 , H01L2224/0345 , H01L2224/03462 , H01L2224/0362 , H01L2224/03622 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05214 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/0603 , H01L2224/06181 , H01L2224/291 , H01L2224/32225 , H01L2224/3223 , H01L2224/48091 , H01L2224/48227 , H01L2224/4823 , H01L2224/73265 , H01L2224/8382 , H01L2224/94 , H01L2924/00014 , H01L2924/01014 , H01L2924/01068 , H01L2924/01078 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/14 , H01L2924/15153 , H01L2924/181 , Y02P80/30 , H01L2224/45099 , H01L2224/03 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallization layer is formed on the second surface of the semiconductor substrate. The metallization layer has a thickness which is greater than the device thickness.
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公开(公告)号：US09887152B2
公开(公告)日：2018-02-06
申请号：US14709562
申请日：2015-05-12
发明人： Rudolf Zelsacher , Paul Ganitzer
IPC分类号： H01L23/498 , H01L23/373 , H01L23/495 , H01L21/683 , H01L21/78 , H01L23/492 , H01L29/06 , H01L21/48 , H01L21/768 , H01L23/31 , H01L23/00
CPC分类号： H01L23/49811 , H01L21/4853 , H01L21/6835 , H01L21/76873 , H01L21/78 , H01L23/3107 , H01L23/3736 , H01L23/492 , H01L23/49575 , H01L23/49838 , H01L23/49866 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/48 , H01L24/73 , H01L29/0657 , H01L2221/68327 , H01L2221/6834 , H01L2221/6835 , H01L2224/03002 , H01L2224/03009 , H01L2224/0345 , H01L2224/03462 , H01L2224/0362 , H01L2224/03622 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05214 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/0603 , H01L2224/06181 , H01L2224/291 , H01L2224/32225 , H01L2224/3223 , H01L2224/48091 , H01L2224/48227 , H01L2224/4823 , H01L2224/73265 , H01L2224/8382 , H01L2224/94 , H01L2924/00014 , H01L2924/01014 , H01L2924/01068 , H01L2924/01078 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/14 , H01L2924/15153 , H01L2924/181 , Y02P80/30 , H01L2224/45099 , H01L2224/03 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.
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4.发明申请公开(公告)号：US20140284819A1
公开(公告)日：2014-09-25
申请号：US14295791
申请日：2014-06-04
发明人： Rudolf Zelsacher , Paul Ganitzer
IPC分类号： H01L23/00 , H01L23/498
CPC分类号： H01L23/49811 , H01L21/4853 , H01L21/6835 , H01L21/76873 , H01L21/78 , H01L23/3107 , H01L23/3736 , H01L23/492 , H01L23/49575 , H01L23/49838 , H01L23/49866 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/48 , H01L24/73 , H01L29/0657 , H01L2221/68327 , H01L2221/6834 , H01L2221/6835 , H01L2224/03002 , H01L2224/03009 , H01L2224/0345 , H01L2224/03462 , H01L2224/0362 , H01L2224/03622 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05214 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/0603 , H01L2224/06181 , H01L2224/291 , H01L2224/32225 , H01L2224/3223 , H01L2224/48091 , H01L2224/48227 , H01L2224/4823 , H01L2224/73265 , H01L2224/8382 , H01L2224/94 , H01L2924/00014 , H01L2924/01014 , H01L2924/01068 , H01L2924/01078 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/14 , H01L2924/15153 , H01L2924/181 , Y02P80/30 , H01L2224/45099 , H01L2224/03 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要： A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.
摘要翻译： 公开了半导体器件的制造方法。 在一个实施例中，提供具有第一表面，与第一表面相对的第二表面和多个半导体部件的半导体衬底。 半导体衬底具有器件厚度。 在半导体衬底的第二表面上形成至少一个金属化层。 金属化层的厚度大于器件厚度。
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