TIN DODECAMERS AND RADIATION PATTERNABLE COATINGS WITH STRONG EUV ABSORPTION

    公开(公告)号:US20240376135A1

    公开(公告)日:2024-11-14

    申请号:US18779539

    申请日:2024-07-22

    Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

    APPARATUSES FOR REDUCING METAL RESIDUE IN EDGE BEAD REGION FROM METAL-CONTAINING RESISTS

    公开(公告)号:US20200209756A1

    公开(公告)日:2020-07-02

    申请号:US16810924

    申请日:2020-03-06

    Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

    ORGANOMETALLIC SOLUTION BASED HIGH RESOLUTION PATTERNING COMPOSITIONS
    9.
    发明申请
    ORGANOMETALLIC SOLUTION BASED HIGH RESOLUTION PATTERNING COMPOSITIONS 有权
    基于有机溶液的高分辨率图案组合物

    公开(公告)号:US20150056542A1

    公开(公告)日:2015-02-26

    申请号:US13973098

    申请日:2013-08-22

    Abstract: Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

    Abstract translation: 已经发现有机金属溶液使用薄涂层提供高分辨率的基于辐射的图案化。 图案化可以包括用选定图案照射涂覆表面,并用显影剂显影图案以形成显影图像。 基于使用有机显影剂或酸性或碱性显影剂水溶液,可图案化的涂层可能对正色调图案化或负色调图案敏感。 辐射敏感涂层可以包含具有有机配体的金属氧代/羟基网络。 前体溶液可以包含具有金属碳键和/或金属羧酸盐键的有机配体的有机液体和金属多核氧代 - 羟基阳离子。

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