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公开(公告)号:US20220406646A1
公开(公告)日:2022-12-22
申请号:US17351803
申请日:2021-06-18
申请人: Intel Corporation
发明人: Vijay Saradhi Mangu , David Meyaard , Randy Koval , Krishna Parat
IPC分类号: H01L21/768 , H01L23/522 , H01L23/532 , H01L27/11556 , H01L27/11529 , H01L27/11582 , H01L27/11573 , H01L21/311
摘要: An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.
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公开(公告)号:US11355199B2
公开(公告)日:2022-06-07
申请号:US16947219
申请日:2020-07-23
申请人: Intel Corporation
发明人: Wei Cao , Richard M. Fastow , Xuehong Yu , Xin Sun , Hyungseok Kim , Narayanan Ramanan , Amol R. Joshi , Krishna Parat
摘要: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.
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公开(公告)号:US20210240388A1
公开(公告)日:2021-08-05
申请号:US16779472
申请日:2020-01-31
申请人: Intel Corporation
发明人: Arash Hazeghi , Pranav Kalavade , Rohit Shenoy , Krishna Parat
IPC分类号: G06F3/06 , G05B19/406
摘要: An apparatus and/or system is described including a memory device or a controller for the memory device to perform heating of the memory device. In embodiments, a controller is to receive a temperature of the memory device and determine that the temperature is below a threshold temperature. In embodiments, the controller activates a heater for one or more memory die to assist the memory device in moving the temperature towards the threshold temperature, to assist the memory device when reading data. In embodiments, the heater comprises a plurality of conductive channels included in the one or more memory die or other on-board heater. Other embodiments are disclosed and claimed.
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公开(公告)号:US10854746B2
公开(公告)日:2020-12-01
申请号:US16190135
申请日:2018-11-13
申请人: Intel Corporation
发明人: Prashant Majhi , Khaled Hasnat , Krishna Parat
IPC分类号: H01L29/792 , H01L29/78 , H01L27/11524 , H01L27/11556 , H01L29/04 , H01L27/11582 , H01L29/16 , H01L27/1157 , H01L21/28
摘要: A memory structure can include a conductive channel, a charge storage structure adjacent to the conductive channel, and a strain-inducing layer adjacent to the conductive channel on a side opposite the charge storage structure. The strain-inducing layer can have a higher coefficient of thermal expansion (CTE) than the conductive channel.
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公开(公告)号:US20220284968A1
公开(公告)日:2022-09-08
申请号:US17825960
申请日:2022-05-26
申请人: Intel Corporation
发明人: Wei Cao , Richard M. Fastow , Xuehong Yu , Xin Sun , Hyungseok Kim , Narayanan Ramanan , Amol R. Joshi , Krishna Parat
摘要: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.
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公开(公告)号:US11322508B2
公开(公告)日:2022-05-03
申请号:US15996116
申请日:2018-06-01
申请人: Intel Corporation
发明人: Krishna Parat , Richard Fastow
IPC分类号: H01L27/11556 , G11C16/04 , H01L21/764 , H01L27/11524 , H01L27/1157 , H01L27/11582
摘要: Flash memory technology is disclosed. In one example, a flash memory component can include a plurality of conductive layers vertically spaced apart from one another and separated by voids, each of the plurality of conductive layers forming a word line. The memory component can also include a vertically oriented conductive channel extending through the plurality of conductive layers. In addition, the flash memory component can include a plurality of memory cells coupling the plurality of conductive layers to the conductive channel. Each word line can be associated with one of the plurality of memory cells. Associated devices, systems, and methods are also disclosed.
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公开(公告)号:US20220028459A1
公开(公告)日:2022-01-27
申请号:US16947219
申请日:2020-07-23
申请人: Intel Corporation
发明人: Wei Cao , Richard M. Fastow , Xuehong Yu , Xin Sun , Hyungseok Kim , Narayanan Ramanan , Amol R. Joshi , Krishna Parat
摘要: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.
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公开(公告)号:US10923450B2
公开(公告)日:2021-02-16
申请号:US16437445
申请日:2019-06-11
申请人: Intel Corporation
IPC分类号: H01L23/00 , H01L25/00 , H01L21/768 , H01L27/11582 , H01L27/11556 , H01L27/11526 , H01L27/11573 , H01L25/18
摘要: An integrated circuit memory includes a logic circuitry bonded to a memory array. For example, the logic circuitry is formed separately from the memory array, and then the logic circuitry and the memory array are bonded. The logic circuitry facilitates operations of the memory array and includes complementary metal-oxide-semiconductor (CMOS) logic components, such as word line drivers, bit line drivers, sense amplifiers for the memory array. In an example, instead of being bonded to a single memory array, the logic circuitry is bonded to and shared by two memory arrays. For example, the logic circuitry is between two memory arrays. Due to the bonding process, a bonding interface layer is formed. Thus, in such an example, a first bonding interface layer is between the logic circuitry and a first memory array, and a second bonding interface layer is between the logic circuitry and a second memory array.
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公开(公告)号:US10861867B2
公开(公告)日:2020-12-08
申请号:US16021550
申请日:2018-06-28
申请人: Intel Corporation
发明人: Khaled Hasnat , Prashant Majhi , Krishna Parat
IPC分类号: H01L27/11582 , H01L23/532 , H01L29/49 , H01L21/768 , H01L29/51 , H01L23/528 , H01L21/28 , H01L29/66 , H01L29/792 , H01L21/3105 , H01L23/00 , H01L21/3065 , H01L21/3213 , H01L21/02
摘要: Embodiments of the present disclosure are directed towards techniques to provide a memory device with reduced capacitance. In one embodiment, a memory array is formed in a die, and includes one or more pillars and a plurality of wordlines coupled with the one or more pillars. Adjacent wordlines of the plurality of wordlines are separated by respective dielectric layers, which may include components, to reduce capacitance of the plurality of wordlines. The components comprise air gaps or low-k dielectric material. Other embodiments may be described and/or claimed.
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公开(公告)号:US11625191B2
公开(公告)日:2023-04-11
申请号:US16779472
申请日:2020-01-31
申请人: Intel Corporation
发明人: Arash Hazeghi , Pranav Kalavade , Rohit Shenoy , Krishna Parat
IPC分类号: G06F3/06 , G05B19/406
摘要: An apparatus and/or system is described including a memory device or a controller for the memory device to perform heating of the memory device. In embodiments, a controller is to receive a temperature of the memory device and determine that the temperature is below a threshold temperature. In embodiments, the controller activates a heater for one or more memory die to assist the memory device in moving the temperature towards the threshold temperature, to assist the memory device when reading data. In embodiments, the heater comprises a plurality of conductive channels included in the one or more memory die or other on-board heater. Other embodiments are disclosed and claimed.
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