公开(公告)号：US20130340648A1

公开(公告)日：2013-12-26

申请号：US14013760

申请日：2013-08-29

Applicant: Intermolecular, Inc.

Inventor： Bob Kong ,  Igor Ivanov ,  Zhi-Wen Sun ,  Jinhong Tong

IPC: C23C18/44

CPC classification number: C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

Abstract translation: 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。

公开(公告)号：US09023137B2

公开(公告)日：2015-05-05

申请号：US14013760

申请日：2013-08-29

Applicant: Intermolecular, Inc.

Inventor： Bob Kong ,  Igor Ivanov ,  Zhi-Wen Sun ,  Jinhong Tong

IPC: C23C18/44 ,  H01L21/02 ,  H01L21/033 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/768 ,  C23C18/18 ,  C23C18/16 ,  H01L27/105 ,  H01L49/02

CPC classification number: C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

Abstract translation: 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。

公开(公告)号：US20130043454A1

公开(公告)日：2013-02-21

申请号：US13659037

申请日：2012-10-24

Applicant: INTERMOLECULAR, INC.

Inventor： Alexander Gorer ,  Tony P. Chiang ,  Igor Ivanov ,  Prashant B. Phatak

IPC: H01L45/00

CPC classification number: H01L45/10 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.

Abstract translation: 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。

公开(公告)号：US08816317B2

公开(公告)日：2014-08-26

申请号：US13659037

申请日：2012-10-24

Applicant: Intermolecular, Inc.

Inventor： Alexander Gorer ,  Tony P. Chiang ,  Igor Ivanov ,  Prashant B. Phatak

IPC: H01L47/00

CPC classification number: H01L45/10 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.

Abstract translation: 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。