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    Current compliance layers and memory arrays comprising thereof
    1.
    发明授权
    Current compliance layers and memory arrays comprising thereof 有权

    公开(公告)号：US10833263B2

    公开(公告)日：2020-11-10

    申请号：US16735801

    申请日：2020-01-07

    Applicant: Intermolecular, Inc.

    Inventor： Tony Chiang ,  Sergey V. Barabash ,  Karl Littau ,  Vijay Kris Narasimhan ,  Stephen Weeks

    IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

    Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

    Vapor Based Site-Isolated Processing Systems and Methods
    2.
    发明申请
    Vapor Based Site-Isolated Processing Systems and Methods 审中-公开

    公开(公告)号：US20170233868A1

    公开(公告)日：2017-08-17

    申请号：US15427882

    申请日：2017-02-08

    Applicant: Intermolecular, Inc.

    Inventor： Bernardo Donoso ,  Karl Littau ,  Lawrence D. Bartholomew

    IPC: C23C16/455 ,  H01L21/02 ,  C23C16/44

    CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45574

    Abstract: Embodiments provided herein describe systems and method for processing substrates. A substrate is provided. A showerhead is positioned above the substrate. The showerhead includes a plurality of injection ports, at least one isolation channel, and at least one exhaust port on a bottom surface thereof. The at least one isolation channel separates the plurality of injection ports into two or more sections. The at least one exhaust port is positioned within the at least one isolation channel. The plurality of injection ports are not in fluid communication with the at least one exhaust port within the showerhead. At least one processing fluid is caused to be delivered from the plurality of injection ports onto the substrate. At least some of the at least one processing fluid is caused to be removed from the substrate through the at least one exhaust port.

    Method to grow in-situ crystalline IGZO using co-sputtering targets
    3.
    发明授权
    Method to grow in-situ crystalline IGZO using co-sputtering targets 有权
    使用共溅射靶生长原位结晶IGZO的方法

    公开(公告)号：US09337030B2

    公开(公告)日：2016-05-10

    申请号：US14549158

    申请日：2014-11-20

    Applicant: Intermolecular Inc.

    Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

    IPC: H01L21/02 ,  H01L29/786

    CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

    Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

    Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

    Vapor based site-isolated processing systems and methods
    4.
    发明授权
    Vapor based site-isolated processing systems and methods 有权

    公开(公告)号：US10364497B2

    公开(公告)日：2019-07-30

    申请号：US15427882

    申请日：2017-02-08

    Applicant: Intermolecular, Inc.

    Inventor： Bernardo Donoso ,  Karl Littau ,  Lawrence D. Bartholomew

    IPC: C23C16/455 ,  C23C16/44

    Abstract: Embodiments provided herein describe systems and method for processing substrates. A substrate is provided. A showerhead is positioned above the substrate. The showerhead includes a plurality of injection ports, at least one isolation channel, and at least one exhaust port on a bottom surface thereof. The at least one isolation channel separates the plurality of injection ports into two or more sections. The at least one exhaust port is positioned within the at least one isolation channel. The plurality of injection ports are not in fluid communication with the at least one exhaust port within the showerhead. At least one processing fluid is caused to be delivered from the plurality of injection ports onto the substrate. At least some of the at least one processing fluid is caused to be removed from the substrate through the at least one exhaust port.

    Current compliance layers and memory arrays comprising thereof
    5.
    发明授权
    Current compliance layers and memory arrays comprising thereof 有权

    公开(公告)号：US10580978B2

    公开(公告)日：2020-03-03

    申请号：US15863199

    申请日：2018-01-05

    Applicant: Intermolecular, Inc.

    Inventor： Tony Chiang ,  Sergey V Barabash ,  Karl Littau ,  Vijay Kris Narasimhan ,  Stephen Weeks

    IPC: H01L45/00 ,  H01L27/24

    Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

    Novel Method to Grow In-Situ Crystalline IGZO
    8.
    发明申请
    Novel Method to Grow In-Situ Crystalline IGZO 有权
    增加原位结晶IGZO的新方法

    公开(公告)号：US20150279670A1

    公开(公告)日：2015-10-01

    申请号：US14549158

    申请日：2014-11-20

    Applicant: Intermolecular Inc.

    Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

    IPC: H01L21/02 ,  H01L29/786

    CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

    Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

    Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

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