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1.发明授权公开(公告)号：US08003425B2
公开(公告)日：2011-08-23
申请号：US12120459
申请日：2008-05-14
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14689 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
摘要翻译： 在具有不同折射率的两层之间的光学界面处形成具有小于由光电二极管可检测的光的波长范围的垂直和横向尺寸的突起。 突起可以通过采用在第二聚合物嵌段组分的基质内形成第一聚合物嵌段组分的亚光刻特征阵列的自组装嵌段共聚物来形成。 聚合物嵌段组分的图案被转移到第一光学层中以形成纳米级突起的阵列。 或者，可以使用常规光刻来形成尺寸小于光的波长的突起。 第二光学层直接形成在第一光学层的突起上。 第一和第二光学层之间的界面具有渐变的折射率，并提供很少的反射光的高透射率。
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公开(公告)号：US07759755B2
公开(公告)日：2010-07-20
申请号：US12120413
申请日：2008-05-14
IPC分类号： H01L31/112 , H01L31/0216
CPC分类号： H01L31/103 , H01L24/05 , H01L24/73 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L31/02165 , H01L31/0236 , H01L2224/04042 , H01L2224/05 , H01L2224/32225 , H01L2224/48227 , H01L2224/48464 , H01L2224/4847 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/3025 , Y02E10/50 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
摘要翻译： 提供了具有不同折射率的两层之间的突起阵列的光学结构。 突起阵列具有小于由CMOS图像传感器的光电二极管可检测的光的波长范围的垂直和侧向尺寸。 突起的阵列提供了很少的反射光的高透射率。 突起阵列可以设置在光电二极管上，后端行互连结构中，用于光电二极管的透镜，光电二极管的背面或芯片封装的窗口上。
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公开(公告)号：US20090283807A1
公开(公告)日：2009-11-19
申请号：US12120413
申请日：2008-05-14
IPC分类号： H01L31/0232
CPC分类号： H01L31/103 , H01L24/05 , H01L24/73 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L31/02165 , H01L31/0236 , H01L2224/04042 , H01L2224/05 , H01L2224/32225 , H01L2224/48227 , H01L2224/48464 , H01L2224/4847 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/3025 , Y02E10/50 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
摘要翻译： 提供了具有不同折射率的两层之间的突起阵列的光学结构。 突起阵列具有小于由CMOS图像传感器的光电二极管可检测的光的波长范围的垂直和侧向尺寸。 突起的阵列提供了很少的反射光的高透射率。 突起阵列可以设置在光电二极管上，后端行互连结构中，用于光电二极管的透镜，光电二极管的背面或芯片封装的窗口上。
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公开(公告)号：US08138534B2
公开(公告)日：2012-03-20
申请号：US12770349
申请日：2010-04-29
IPC分类号： H01L31/10 , H01L31/112
CPC分类号： H01L31/103 , H01L24/05 , H01L24/73 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L31/02165 , H01L31/0236 , H01L2224/04042 , H01L2224/05 , H01L2224/32225 , H01L2224/48227 , H01L2224/48464 , H01L2224/4847 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/3025 , Y02E10/50 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
摘要翻译： 提供了具有不同折射率的两层之间的突起阵列的光学结构。 突起阵列具有小于由CMOS图像传感器的光电二极管可检测的光的波长范围的垂直和侧向尺寸。 突起的阵列提供了很少的反射光的高透射率。 突起阵列可以设置在光电二极管上，后端行互连结构中，用于光电二极管的透镜，光电二极管的背面或芯片封装的窗口上。
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公开(公告)号：US08716771B2
公开(公告)日：2014-05-06
申请号：US13418706
申请日：2012-03-13
IPC分类号： H01L31/10 , H01L31/112
CPC分类号： H01L31/103 , H01L24/05 , H01L24/73 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L31/02165 , H01L31/0236 , H01L2224/04042 , H01L2224/05 , H01L2224/32225 , H01L2224/48227 , H01L2224/48464 , H01L2224/4847 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/3025 , Y02E10/50 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
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6.发明授权公开(公告)号：US08409904B2
公开(公告)日：2013-04-02
申请号：US13165375
申请日：2011-06-21
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14689 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
摘要翻译： 在具有不同折射率的两层之间的光学界面处形成具有小于由光电二极管可检测的光的波长范围的垂直和横向尺寸的突起。 突起可以通过采用在第二聚合物嵌段组分的基质内形成第一聚合物嵌段组分的亚光刻特征阵列的自组装嵌段共聚物来形成。 聚合物嵌段组分的图案被转移到第一光学层中以形成纳米级突起的阵列。 或者，可以使用常规光刻来形成尺寸小于光的波长的突起。 第二光学层直接形成在第一光学层的突起上。 第一和第二光学层之间的界面具有渐变的折射率，并提供很少的反射光的高透射率。
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公开(公告)号：US20120168835A1
公开(公告)日：2012-07-05
申请号：US13418706
申请日：2012-03-13
IPC分类号： H01L27/144 , H01L23/49
CPC分类号： H01L31/103 , H01L24/05 , H01L24/73 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L31/02165 , H01L31/0236 , H01L2224/04042 , H01L2224/05 , H01L2224/32225 , H01L2224/48227 , H01L2224/48464 , H01L2224/4847 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/3025 , Y02E10/50 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
摘要翻译： 提供了具有不同折射率的两层之间的突起阵列的光学结构。 突起阵列具有小于由CMOS图像传感器的光电二极管可检测的光的波长范围的垂直和侧向尺寸。 突起的阵列提供了很少的反射光的高透射率。 突起阵列可以设置在光电二极管上，后端行互连结构中，用于光电二极管的透镜，光电二极管的背面或芯片封装的窗口上。
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8.发明申请公开(公告)号：US20110250715A1
公开(公告)日：2011-10-13
申请号：US13165375
申请日：2011-06-21
CPC分类号： H01L27/14685 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14689 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
摘要翻译： 在具有不同折射率的两层之间的光学界面处形成具有小于由光电二极管可检测的光的波长范围的垂直和横向尺寸的突起。 突起可以通过采用在第二聚合物嵌段组分的基质内形成第一聚合物嵌段组分的亚光刻特征阵列的自组装嵌段共聚物来形成。 聚合物嵌段组分的图案被转移到第一光学层中以形成纳米级突起的阵列。 或者，可以使用常规光刻来形成尺寸小于光的波长的突起。 第二光学层直接形成在第一光学层的突起上。 第一和第二光学层之间的界面具有渐变的折射率，并提供很少的反射光的高透射率。
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公开(公告)号：US20100264473A1
公开(公告)日：2010-10-21
申请号：US12770349
申请日：2010-04-29
IPC分类号： H01L31/0232 , H01L31/0203 , H01L31/02
CPC分类号： H01L31/103 , H01L24/05 , H01L24/73 , H01L27/14603 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14643 , H01L31/02165 , H01L31/0236 , H01L2224/04042 , H01L2224/05 , H01L2224/32225 , H01L2224/48227 , H01L2224/48464 , H01L2224/4847 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/15312 , H01L2924/3025 , Y02E10/50 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
摘要翻译： 提供了具有不同折射率的两层之间的突起阵列的光学结构。 突起阵列具有小于由CMOS图像传感器的光电二极管可检测的光的波长范围的垂直和侧向尺寸。 突起的阵列提供了很少的反射光的高透射率。 突起阵列可以设置在光电二极管上，后端行互连结构中，用于光电二极管的透镜，光电二极管的背面或芯片封装的窗口上。
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10.发明申请公开(公告)号：US20090286346A1
公开(公告)日：2009-11-19
申请号：US12120459
申请日：2008-05-14
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14689 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.
摘要翻译： 在具有不同折射率的两层之间的光学界面处形成具有小于由光电二极管可检测的光的波长范围的垂直和横向尺寸的突起。 突起可以通过采用在第二聚合物嵌段组分的基质内形成第一聚合物嵌段组分的亚光刻特征阵列的自组装嵌段共聚物来形成。 聚合物嵌段组分的图案被转移到第一光学层中以形成纳米级突起的阵列。 或者，可以使用常规光刻来形成尺寸小于光的波长的突起。 第二光学层直接形成在第一光学层的突起上。 第一和第二光学层之间的界面具有渐变的折射率，并提供很少的反射光的高透射率。
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