摘要:
A radiation sensor for use with a lithographic apparatus is disclosed, the radiation sensor comprising a radiation-sensitive material which converts incident radiation of wavelength λ1 into secondary radiation; and sensing means capable of detecting the secondary radiation emerging from said layer.
摘要:
A reflector alignment system uses an alignment beam propagating through a projection system that includes a mirror group to measure the apparent relative positions of two reference marks fixed to a reference frame on opposite sides of the projection system. Any movement of mirrors in the projection system will be detected as a shift in the apparent position of the reference marks.
摘要:
A lithographic projection apparatus includes a radiation system for providing a projection beam of radiation having a wavelength λ1 smaller than 50 nm; a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. The apparatus further includes a radiation sensor which is located so as to be able to receive radiation out of the projection beam, said sensor comprising a radiation-sensitive material which converts incident radiation of wavelength λ1 into secondary radiation; and sensing means capable of detecting said secondary radiation emerging from said layer.
摘要:
A radiation sensor for use with a lithographic apparatus is disclosed, the radiation sensor comprising a radiation-sensitive material which converts incident radiation of wavelength λ1 into secondary radiation; and sensing means capable of detecting the secondary radiation emerging from said layer.
摘要:
A lithographic projection apparatus includes a radiation system for providing a projection beam of radiation having a wavelength &lgr;1 smaller than 50 nm; a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate. The apparatus further includes a radiation sensor which is located so as to be able to receive radiation out of the projection beam, said sensor comprising a radiation-sensitive material which converts incident radiation of wavelength &lgr;1 into secondary radiation; and sensing means capable of detecting said secondary radiation emerging from said layer.
摘要:
A lithographic apparatus includes a radiation system having reflective optical elements constructed and arranged to condition a beam of radiation. The reflective optical elements include a first faceted mirror constructed and arranged to generate a plurality of source images on a second mirror. The lithographic apparatus also includes a facet mask constructed and arranged to selectively mask one or more of the facets of the first faceted mirror. The facet mask includes a masking blade selectively interposable into the beam.
摘要:
A lithographic apparatus includes a device having a blade selectively insertable into the beam. The device is in a first plane intermediate a second plane conjugate to a plane of the substrate and a third plane conjugate to a pupil plane of the projection system. The blade may include a partially opaque blade and a solid blade or have a predetermined transmissibility pattern. The transmissibility may vary in a second direction perpendicular to the first direction in which the substrate and the patterning device are movable. In an illumination system including a field faceted mirror and a pupil faceted mirror, a reflecting blade is selectively insertable into the beam to reflect a portion of the beam to a beam dump that may be cooled to reduce a heat load. The reflecting element may have a coating that scatters the portion of radiation or changes the phase.
摘要:
A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.
摘要:
A method of operating a lithographic projection apparatus including forming a spot of radiation at the wafer level using a pinhole at reticle level. A sensor is defocused with respect to the spot such that it is spaced apart from the wafer level. The sensor is scanned beneath the spot to measure the angular intensity distribution of radiation at the spot and to determine the intensity distribution at the pupil plane of the projection lens system.
摘要:
A lithographic apparatus can include the following devices: a patterning system, a projection system, and a radiation beam inspection device. The patterning system can be configured to provide a patterned radiation beam. The projection system can be configured to project the patterned radiation beam onto a target portion of a substrate. Further, the radiation beam inspection device can be configured to inspect at least a part of the patterned radiation beam. In a substrate exposure position, the projection system is configured to expose a pattern of radiation on the substrate using the patterned radiation beam and the radiation beam device is configured to move the reflecting device away from a light path of the patterned radiation beam. In a radiation beam inspection position, the radiation beam inspection device is configured to move the reflecting device into the light path of the patterned radiation beam.