摘要:
A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.
摘要:
In a method for determining a structure parameter of a target pattern, a first series of calibration spectra are determined from at least one reference pattern, each spectra being determined using a different known value of at least one structure parameter of the respective reference pattern. The first series of calibration spectra does not take into account parameters of an apparatus used to produce the reference pattern. A representation of each of the first series calibration spectra is stored in a central library. A second series of calibration spectra corresponding to at least one of the stored spectra for a target spectrum is determined using the parameters of the apparatus for measuring the target spectrum. A measured target spectrum is produced by directing a beam of radiation onto the target pattern. The measured target spectrum and the second series of calibration spectra are compared, where this comparison is used to derive a value for the structure parameter of the target pattern.
摘要:
A method according to an embodiment includes obtaining calibration measurement data, with an optical detection apparatus, from a plurality of marker structure sets provided on a calibration substrate. Each marker structure set includes at least one calibration marker structure created using different known values of the process parameter. The method includes obtaining measurement data, with the optical detection apparatus, from at least one marker structure provided on a substrate and exposed using an unknown value of the process parameter; and determining the unknown value of the process parameter from the obtained measurement data by employing regression coefficients in a model based on the known values of the process parameter and the calibration measurement data.
摘要:
In a scatterometric method differential targets with different sensitivities to parameters of interest are printed in a calibration matrix and difference spectra obtained. principal component analysis is applied to the difference spectra to obtain a calibration function that is less sensitive to variations in the underlying structure than a calibration function obtained from spectra obtained from a single target.
摘要:
A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.
摘要:
In a scatterometric method differential targets with different sensitivities to parameters of interest are printed in a calibration matrix and difference spectra obtained. principal component analysis is applied to the difference spectra to obtain a calibration function that is less sensitive to variations in the underlying structure than a calibration function obtained from spectra obtained from a single target.
摘要:
A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.
摘要:
The present invention provides a method for forming a substrate for use in calibrating a metrology tool in order to compensate for orientation-dependent variations within the metrology tool.
摘要:
For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants.
摘要:
Building of a model profile for a target is disclosed. An embodiment of the method includes importing an image of a known object and superimposing, on this image, either by hand or automatically, an estimated profile. The estimated profile is defined mathematically and adjusted segment by segment in order to match the image such that the adjusted estimated profile may be stored alongside a diffraction spectrum associated with the image. Alternatively or additionally, a user may trace (or free-draw) the profile of a known image and subsequently map a shape-definer of a mathematical function such as a polynomial equation, a spline or a vector onto the estimated profile in order to obtain a profile and one or more variables of that profile that may be used to reconstruct the profile of an unknown object from its diffraction pattern.