摘要:
A sputtering target is described herein, which includes: a) a surface material, and b) a core material coupled to the surface material, wherein at least one of the surface material or the core material has less than 100 ppm defect volume. Methods for producing sputtering targets are described that include: a) providing at least one sputtering target material, b) melting the at least one sputtering target material to provide a molten material, c) degassing the molten material, d) pouring the molten material into a target mold. In some embodiments, pouring the molten material into a target mold comprises under-pouring or under-skimming the molten material from the crucible into the target mold. Sputtering targets and related apparatus formed by and utilizing these methods are also described herein. In addition, uses of these sputtering targets are described herein.
摘要:
The invention includes a method of detecting impurities in a metal-containing article. A portion of metal material is removed from a metal article and is solubilized in an acid or base-comprising liquid to produce a liquid sample. The liquid sample is subjected to an incident laser beam and light scattered from the sample is detected. The invention includes a method of analyzing a physical vapor deposition target material. A portion of target material is removed from the target and is rinsed with an acid-comprising solution. The portion of target material is dissolved to produce a liquid sample. The sample is subjected to an incident laser beam and scatter of the laser beam is detected to determine the number of particles present in the sample within a particular size range.
摘要:
Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation. In addition, methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing a core material, coupling the surface material to the core material, and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Also, methods of producing sputtering targets having reduced burn-in times include: providing a surface material combined with a core material, wherein the surface material has at least some residual surface damage and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material.
摘要:
The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.
摘要:
Described is a method for producing a diffusion bonded sputtering assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.
摘要:
Described is a method for producing a diffusion bonded sputtering target assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.
摘要:
Target/backing plate constructions and methods of forming target/backing plate constructions are disclosed herein. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of titanium, tantalum, titanium zirconium, hafnium, niobium, vanadium, tungsten, copper or a combination thereof. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
摘要:
Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
摘要:
A sputtering target comprising a body of metal such as aluminum and its alloy with an ultrafine grain size and small second phase. Also described is a method for making an ultra-fine grain sputtering target comprising melting, atomizing, and depositing atomized metal to form a workpiece, and fabricating the workpiece to form a sputtering target. A method is also disclosed that includes the steps of extruding a workpiece through a die having contiguous, transverse inlet and outlet channels of substantially identical cross section, and fabricating the extruded article into a sputtering target. The extrusion may be performed several times, producing grain size of still smaller size and controlled grain texture.
摘要:
A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.