SPUTTERING TARGETS COMPRISING A NOVEL MANUFACTURING DESIGN, METHODS OF PRODUCTION AND USES THEREOF
    1.
    发明申请
    SPUTTERING TARGETS COMPRISING A NOVEL MANUFACTURING DESIGN, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
    包含新型制造设计的飞溅目标,生产方法及其用途

    公开(公告)号:US20090065354A1

    公开(公告)日:2009-03-12

    申请号:US11854064

    申请日:2007-09-12

    摘要: A sputtering target is described herein, which includes: a) a surface material, and b) a core material coupled to the surface material, wherein at least one of the surface material or the core material has less than 100 ppm defect volume. Methods for producing sputtering targets are described that include: a) providing at least one sputtering target material, b) melting the at least one sputtering target material to provide a molten material, c) degassing the molten material, d) pouring the molten material into a target mold. In some embodiments, pouring the molten material into a target mold comprises under-pouring or under-skimming the molten material from the crucible into the target mold. Sputtering targets and related apparatus formed by and utilizing these methods are also described herein. In addition, uses of these sputtering targets are described herein.

    摘要翻译: 本文描述了溅射靶,其包括:a)表面材料,以及b)与表面材料耦合的芯材料,其中至少一个表面材料或芯材料具有小于100ppm的缺陷体积。 描述了生产溅射靶的方法,包括:a)提供至少一种溅射靶材料,b)熔化至少一种溅射靶材料以提供熔融材料,c)使熔融材料脱气,d)将熔融材料倒入 目标模具。 在一些实施例中,将熔融材料注入到目标模具中包括将熔融材料从坩埚倒入或低于目标模具。 本文还描述了通过和利用这些方法形成的溅射靶和相关装置。 此外,这里描述了这些溅射靶的用途。

    Liquid-particle analysis of metal materials
    2.
    发明授权
    Liquid-particle analysis of metal materials 有权
    金属材料的液 - 液分析

    公开(公告)号:US08030082B2

    公开(公告)日:2011-10-04

    申请号:US11331489

    申请日:2006-01-13

    IPC分类号: G01N33/20 G01N33/53

    CPC分类号: G01N33/20

    摘要: The invention includes a method of detecting impurities in a metal-containing article. A portion of metal material is removed from a metal article and is solubilized in an acid or base-comprising liquid to produce a liquid sample. The liquid sample is subjected to an incident laser beam and light scattered from the sample is detected. The invention includes a method of analyzing a physical vapor deposition target material. A portion of target material is removed from the target and is rinsed with an acid-comprising solution. The portion of target material is dissolved to produce a liquid sample. The sample is subjected to an incident laser beam and scatter of the laser beam is detected to determine the number of particles present in the sample within a particular size range.

    摘要翻译: 本发明包括检测含金属物品中的杂质的方法。 将一部分金属材料从金属制品中除去并溶解在含酸或碱的液体中以产生液体样品。 对液体样品进行入射的激光束,并且检测从样品散射的光。 本发明包括分析物理气相沉积靶材料的方法。 将目标材料的一部分从靶上除去并用含酸溶液冲洗。 将目标材料的部分溶解以产生液体样品。 对样品进行入射激光束,并且检测激光束的散射以确定在特定尺寸范围内存在于样品中的颗粒的数量。

    Novel manufacturing design and processing methods and apparatus for sputtering targets
    3.
    发明申请
    Novel manufacturing design and processing methods and apparatus for sputtering targets 审中-公开
    用于溅射靶的新型制造设计和加工方法和装置

    公开(公告)号:US20080110746A1

    公开(公告)日:2008-05-15

    申请号:US11595658

    申请日:2006-11-09

    IPC分类号: C23C14/00

    CPC分类号: C23C14/3414

    摘要: Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation. In addition, methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing a core material, coupling the surface material to the core material, and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Also, methods of producing sputtering targets having reduced burn-in times include: providing a surface material combined with a core material, wherein the surface material has at least some residual surface damage and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material.

    摘要翻译: 本文描述了具有减少的老化时间的溅射靶,其包括:a)具有平均晶粒尺寸的机加工的表面材料,以及b)具有平均晶粒尺寸的芯材,其中机加工表面材料具有平均 表面粗糙度(Ra)等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。 本文描述了具有减少的老化时间的溅射靶,其包括:表面材料和芯材料,其中至少一个表面材料或芯材料包含相对无带的结晶取向。 此外,生产具有减少的老化时间的溅射靶的方法包括:提供具有至少一些残余表面损伤的表面材料,提供芯材料,将表面材料耦合到芯材料,以及将表面材料机加工成 平均表面粗糙度(Ra)等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。 此外,生产具有减少的烧成时间的溅射靶的方法包括:提供与芯材组合的表面材料,其中表面材料具有至少一些残余表面损伤并将表面材料机加工成平均表面粗糙度(Ra )等于或小于表面材料或芯材料中的至少一种的平均晶粒尺寸。

    Copper sputtering target assembly and method of making same
    8.
    发明授权
    Copper sputtering target assembly and method of making same 失效
    铜溅射靶组件及其制造方法

    公开(公告)号:US06645427B1

    公开(公告)日:2003-11-11

    申请号:US09556488

    申请日:2000-04-21

    IPC分类号: C22C900

    CPC分类号: C23C14/3414 C23C14/3407

    摘要: Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.

    摘要翻译: 描述了通过CuCr合金的中间层与沉淀硬化的铝合金背板结合的高纯度铜扩散的溅射靶组件,其中铜含有Ag,Su,Te,In中的至少一种的微合金添加 ,Mg,B,Bi,Sb和/或P.还公开了一种方法,其包括制备用于加入高纯度铜的母合金,以及制造,热处理和扩散结合工艺以制备具有稳定精细度的溅射靶组件 目标微观结构。

    Sputtering target with ultra-fine, oriented grains and method of making
same
    9.
    发明授权
    Sputtering target with ultra-fine, oriented grains and method of making same 失效
    超细,定向晶粒的溅射靶和制作方法

    公开(公告)号:US5590389A

    公开(公告)日:1996-12-31

    申请号:US363397

    申请日:1994-12-23

    摘要: A sputtering target comprising a body of metal such as aluminum and its alloy with an ultrafine grain size and small second phase. Also described is a method for making an ultra-fine grain sputtering target comprising melting, atomizing, and depositing atomized metal to form a workpiece, and fabricating the workpiece to form a sputtering target. A method is also disclosed that includes the steps of extruding a workpiece through a die having contiguous, transverse inlet and outlet channels of substantially identical cross section, and fabricating the extruded article into a sputtering target. The extrusion may be performed several times, producing grain size of still smaller size and controlled grain texture.

    摘要翻译: 一种溅射靶,其包括诸如铝的金属体及其具有超细晶粒尺寸和小的第二相的合金。 还描述了一种制造超细晶粒溅射靶的方法,包括熔化,雾化和沉积雾化金属以形成工件,以及制造工件以形成溅射靶。 还公开了一种方法,其包括以下步骤:将工件挤压通过具有基本相同横截面的连续的,横向的入口和出口通道的模具,并将挤压制品制造成溅射靶。 挤出可以进行几次,产生更小尺寸的颗粒尺寸和受控的颗粒纹理。