中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.017 seconds)

    Semiconductor device and display device having a protection layer
    1.
    发明授权
    Semiconductor device and display device having a protection layer 有权

    公开(公告)号：US10522567B2

    公开(公告)日：2019-12-31

    申请号：US16041259

    申请日：2018-07-20

    Applicant: Japan Display Inc.

    Inventor： Yuichiro Hanyu ,  Hirokazu Watanabe

    IPC: H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L51/05

    Abstract: According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

    DISPLAY DEVICE
    4.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20180286890A1

    公开(公告)日：2018-10-04

    申请号：US15923026

    申请日：2018-03-16

    Applicant: Japan Display Inc.

    Inventor： Isao Suzumura ,  Yohei Yamaguchi ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Marina Shiokawa

    IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L21/465 ,  H01L21/4763 ,  H01L29/66

    Abstract: The purpose of the invention is to improve reliability of the TFT of the oxide semiconductor. The invention is characterized as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.

    Display device
    5.
    发明授权
    Display device 有权

    公开(公告)号：US10459304B2

    公开(公告)日：2019-10-29

    申请号：US16395491

    申请日：2019-04-26

    Applicant: Japan Display Inc.

    Inventor： Hajime Watakabe ,  Isao Suzumura ,  Hirokazu Watanabe ,  Akihiro Hanada

    IPC: H01L29/10 ,  H01L29/12 ,  G02F1/1368 ,  H01L27/12 ,  H01L51/50 ,  H01L29/786 ,  H01L21/8234

    Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first TFT connects with the silicon (Si) via a first through hole, a drain source electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an ALO layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

    Manufacturing method of a display device
    7.
    发明授权
    Manufacturing method of a display device 有权

    公开(公告)号：US11348948B2

    公开(公告)日：2022-05-31

    申请号：US16931454

    申请日：2020-07-17

    Applicant: Japan Display Inc.

    Inventor： Akihiro Hanada ,  Yohei Yamaguchi ,  Hirokazu Watanabe ,  Isao Suzumura

    IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  H01L21/02

    Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.

    Display device
    8.
    发明授权
    Display device 有权

    公开(公告)号：US10317763B2

    公开(公告)日：2019-06-11

    申请号：US15723300

    申请日：2017-10-03

    Applicant: Japan Display Inc.

    Inventor： Hajime Watakabe ,  Isao Suzumura ,  Hirokazu Watanabe ,  Akihiro Hanada

    IPC: H01L29/10 ,  H01L29/12 ,  G02F1/1368 ,  H01L21/8234 ,  H01L21/473 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L29/786 ,  H01L27/12 ,  H01L51/50

    Abstract: A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a source/drain electrode of the first TFT connects with the silicon (Si) via a first through hole, a source/drain electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an AlO layer is formed on the metal films and the oxide semiconductor, the second source/drain electrode and the metal films are connected via the second through hole formed in the AlO layer.

    Semiconductor device and display device having dissimilar semiconductor layers
    9.
    发明授权
    Semiconductor device and display device having dissimilar semiconductor layers 有权

    公开(公告)号：US10090332B2

    公开(公告)日：2018-10-02

    申请号：US15620997

    申请日：2017-06-13

    Applicant: Japan Display Inc.

    Inventor： Yuichiro Hanyu ,  Hirokazu Watanabe

    IPC: H01L27/12 ,  H01L29/78 ,  H01L51/05 ,  H01L29/786

    Abstract: According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

Patent Agency Ranking