公开(公告)号：US20220149082A1

公开(公告)日：2022-05-12

申请号：US17587671

申请日：2022-01-28

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Masayoshi FUCHI

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/786

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.

公开(公告)号：US20170162715A1

公开(公告)日：2017-06-08

申请号：US15371897

申请日：2016-12-07

Applicant: Japan Display Inc.

Inventor： Takashi OKADA ,  Masayoshi FUCHI ,  Hajime WATAKABE ,  Akihiro HANADA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

Abstract: According to one embodiment, a method of manufacturing a thin film transistor, includes forming an island-like first insulating layer containing oxygen above an insulating substrate, forming an oxide semiconductor layer above the insulating substrate and the first insulating layer and in contact with the first insulating layer, and performing heat treatment to supply oxygen from the first insulating layer to an overlapping area of the oxide semiconductor layer, which is overlaid on the first insulating layer.

公开(公告)号：US20210013235A1

公开(公告)日：2021-01-14

申请号：US17031999

申请日：2020-09-25

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Toshinari SASAKI ,  Masayoshi FUCHI

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362 ,  G09G3/3266 ,  G09G3/3225

Abstract: A semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.

公开(公告)号：US20150380560A1

公开(公告)日：2015-12-31

申请号：US14725361

申请日：2015-05-29

Applicant: Japan Display Inc.

Inventor： Miyuki ISHIKAWA ,  Arichika ISHIDA ,  Masayoshi FUCHI ,  Hajime WATAKABE ,  Takashi OKADA

IPC: H01L29/786 ,  H01L29/417 ,  H01L21/441 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/467 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78696

Abstract: According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

Abstract translation: 根据一个实施例，半导体器件包括穿过层间绝缘膜和氧化物半导体层的漏极区域的源极区域的接触孔，以到达绝缘基板，其中源极电极和漏电极形成在接触孔内部， 分别。

公开(公告)号：US20190096915A1

公开(公告)日：2019-03-28

申请号：US16200157

申请日：2018-11-26

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Masayoshi FUCHI

IPC: H01L27/12 ,  H01L23/532 ,  H01L29/786 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L27/124 ,  H01L21/02063 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53266 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/7869

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.

公开(公告)号：US20150263142A1

公开(公告)日：2015-09-17

申请号：US14729117

申请日：2015-06-03

Applicant: Japan Display Inc.

Inventor： Masato HIRAMATSU ,  Masayoshi FUCHI ,  Arichika ISHIDA

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/465 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/443 ,  H01L21/465 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract translation: 根据一个实施例，薄膜晶体管包括形成在衬底的一部分上的氧化物半导体层，形成在氧化物半导体层上的二氧化硅膜的第一栅极绝缘膜和通过CVD法的硅烷基源 气体，通过CVD法用TEOS源气体形成在第一栅极绝缘膜上的二氧化硅膜的第二栅极绝缘膜，以及形成在第二栅极绝缘膜上的栅电极。

公开(公告)号：US20250098321A1

公开(公告)日：2025-03-20

申请号：US18969433

申请日：2024-12-05

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Toshinari SASAKI ,  Masayoshi FUCHI

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3225 ,  G09G3/3266 ,  H10K59/12 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131

Abstract: A semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.

公开(公告)号：US20240258331A1

公开(公告)日：2024-08-01

申请号：US18439855

申请日：2024-02-13

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Toshinari SASAKI ,  Masayoshi FUCHI

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3225 ,  G09G3/3266 ,  H10K59/12 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131

CPC classification number: H01L27/124 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3225 ,  G09G3/3266 ,  H01L27/1259 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  G02F1/136295 ,  G09G2300/0861 ,  H01L27/1225 ,  H01L27/1255 ,  H10K59/1201

Abstract: A semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.

公开(公告)号：US20170358606A1

公开(公告)日：2017-12-14

申请号：US15617547

申请日：2017-06-08

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Masayoshi FUCHI

IPC: H01L27/12 ,  H01L23/532 ,  H01L21/02 ,  H01L23/522 ,  H01L29/786 ,  H01L21/768

CPC classification number: H01L27/124 ,  H01L21/02063 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53266 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/7869

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.

公开(公告)号：US20240088166A1

公开(公告)日：2024-03-14

申请号：US18509459

申请日：2023-11-15

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Masayoshi FUCHI

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L21/02063 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53266 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/7869

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.