公开(公告)号：US06844612B1

公开(公告)日：2005-01-18

申请号：US10426643

申请日：2003-04-29

申请人： Jason Tian ,  Wenxian Zhu ,  M. Ziaul Karim ,  Cong Do

发明人： Jason Tian ,  Wenxian Zhu ,  M. Ziaul Karim ,  Cong Do

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L21/76801 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/31629 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fluorine-doped silica glass (FSG) dielectric layer includes a number of sublayers. Each sublayer is doped with fluorine in such a way that the doping concentration of fluorine in the sublayer decreases as one moves from an interior region of the sublayer towards one or both of the interfaces between the sublayer and adjacent sublayers. This structure reduces the generation of HF when the layer is exposed to moisture and thereby improves the stability and adhesion properties of the layer. The principles of this invention can also be applied to dielectric layers doped with such other dopants as boron, phosphorus or carbon.

摘要翻译： 氟掺杂石英玻璃（FSG）介电层包括多个子层。 每个子层掺杂氟，使得子层中氟的掺杂浓度随着从子层的内部区域朝向子层和相邻子层之间的一个或两个界面移动而减小。 当该层暴露于水分时，该结构减少HF的产生，从而提高该层的稳定性和粘附性。 本发明的原理也可以应用于掺杂有诸如硼，磷或碳的其它掺杂剂的电介质层。

公开(公告)号：US07052988B1

公开(公告)日：2006-05-30

申请号：US10773821

申请日：2004-02-05

申请人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Ziaul Karim

发明人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Ziaul Karim

IPC分类号： H01L21/44

CPC分类号： H01L21/02126 ,  C23C16/401 ,  G03F7/091 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31612

摘要： A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.

摘要翻译： 使用碳，硅和氧源的气体混合物，在化学气相沉积工艺（任选地等离子体增强）中制造用于半导体光刻中的无氮抗反射层。 通过改变工艺参数，可以获得折射率n和消光系数k的可接受值。 通过这种技术生产的无氮抗反射层消除了常规抗反射层发现的萌发和基础问题。

公开(公告)号：US06720251B1

公开(公告)日：2004-04-13

申请号：US09990197

申请日：2001-11-21

申请人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Zlaul Karim

发明人： Bart van Schravendijk ,  Ming Li ,  Jason Tian ,  Tom Mountsier ,  M. Zlaul Karim

IPC分类号： H01L21205

CPC分类号： H01L21/02126 ,  C23C16/401 ,  G03F7/091 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31612

摘要： A nitrogen-free anti-reflective layer for use in semiconductor photolithography is fabricated in a chemical vapor deposition process, optionally plasma-enhanced, using a gaseous mixture of carbon, silicon, and oxygen sources. By varying the process parameters, acceptable values of the refractive index n and extinction coefficient k can be obtained. The nitrogen-free anti-reflective layer produced by this technique eliminates the mushrooming and footing problems found with conventional anti-reflective layers.

摘要翻译： 使用碳，硅和氧源的气体混合物，在化学气相沉积工艺（任选地等离子体增强）中制造用于半导体光刻中的无氮抗反射层。 通过改变工艺参数，可以获得折射率n和消光系数k的可接受值。 通过这种技术生产的无氮抗反射层消除了常规抗反射层发现的萌发和基础问题。

公开(公告)号：US06524956B1

公开(公告)日：2003-02-25

申请号：US09668217

申请日：2000-09-22

申请人： Jason Tian ,  Jon Henri

发明人： Jason Tian ,  Jon Henri

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  H01L21/76877

摘要： A chemical vapor deposition process for depositing tungsten films having small grain size is provided. The process involves depositing a nucleation layer having very small nuclei that are closely spaced so that there are few vacancies on the surface. Such a nucleation layer results in a film with small grains after the subsequent deposition of bulk layers. The temperature of the substrate can be increased during deposition of the nucleation layer and then lowered for deposition of the bulk layer to produce a small grain tungsten film. Additionally, the thickness of the nucleation layer can be controlled, and the deposition chamber pressure and silage flow rates can also be controlled to achieve the desired nucleation layer before deposition of the bulk layers.

摘要翻译： 提供了用于沉积具有小粒度的钨膜的化学气相沉积工艺。 该方法包括沉积具有非常小的核的成核层，其具有紧密间隔，使得在表面上几乎没有空位。 这样的成核层在随后沉积体层之后产生具有小晶粒的膜。 可以在沉积成核层期间增加基底的温度，然后降低沉积本体层以产生小晶粒钨膜。 此外，可以控制成核层的厚度，并且还可以控制沉积室压力和青贮饲料流速以在堆积层之前实现期望的成核层。

公开(公告)号：US07704894B1

公开(公告)日：2010-04-27

申请号：US11602564

申请日：2006-11-20

申请人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

发明人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

IPC分类号： H01L21/461

CPC分类号： C23C16/402 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612

摘要： This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.

摘要翻译： 本发明提供了一种用于在多站顺序沉积室中沉积TEOS膜的高通量PECVD工艺。 这些方法显着减少了TEOS膜中的颗粒数量，从而消除或最小化了小槽缺陷。 本发明的方法涉及在吹扫气体的同时第一工作站进行温度浸泡。 停止反应气体的流动并流动站1的吹扫气体可消除冷晶片表面上的TEOS冷凝，并显着减少膜中缺陷的数量，特别是对于短温浸泡。

公开(公告)号：US08034725B1

公开(公告)日：2011-10-11

申请号：US12723504

申请日：2010-03-12

申请人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

发明人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

IPC分类号： H01L21/469

CPC分类号： C23C16/402 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612

摘要： This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.

摘要翻译： 本发明提供了一种用于在多站顺序沉积室中沉积TEOS膜的高通量PECVD工艺。 这些方法显着减少了TEOS膜中的颗粒数量，从而消除或最小化了小槽缺陷。 本发明的方法涉及在吹扫气体的同时第一工作站进行温度浸泡。 停止反应气体的流动并流动站1的吹扫气体可消除冷晶片表面上的TEOS冷凝，并显着减少膜中缺陷的数量，特别是对于短温浸泡。