公开(公告)号：US07704894B1

公开(公告)日：2010-04-27

申请号：US11602564

申请日：2006-11-20

申请人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

发明人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

IPC分类号： H01L21/461

CPC分类号： C23C16/402 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612

摘要： This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.

摘要翻译： 本发明提供了一种用于在多站顺序沉积室中沉积TEOS膜的高通量PECVD工艺。 这些方法显着减少了TEOS膜中的颗粒数量，从而消除或最小化了小槽缺陷。 本发明的方法涉及在吹扫气体的同时第一工作站进行温度浸泡。 停止反应气体的流动并流动站1的吹扫气体可消除冷晶片表面上的TEOS冷凝，并显着减少膜中缺陷的数量，特别是对于短温浸泡。

公开(公告)号：US08034725B1

公开(公告)日：2011-10-11

申请号：US12723504

申请日：2010-03-12

申请人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

发明人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

IPC分类号： H01L21/469

CPC分类号： C23C16/402 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612

摘要： This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.

摘要翻译： 本发明提供了一种用于在多站顺序沉积室中沉积TEOS膜的高通量PECVD工艺。 这些方法显着减少了TEOS膜中的颗粒数量，从而消除或最小化了小槽缺陷。 本发明的方法涉及在吹扫气体的同时第一工作站进行温度浸泡。 停止反应气体的流动并流动站1的吹扫气体可消除冷晶片表面上的TEOS冷凝，并显着减少膜中缺陷的数量，特别是对于短温浸泡。

公开(公告)号：US06524956B1

公开(公告)日：2003-02-25

申请号：US09668217

申请日：2000-09-22

申请人： Jason Tian ,  Jon Henri

发明人： Jason Tian ,  Jon Henri

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  H01L21/76877

摘要： A chemical vapor deposition process for depositing tungsten films having small grain size is provided. The process involves depositing a nucleation layer having very small nuclei that are closely spaced so that there are few vacancies on the surface. Such a nucleation layer results in a film with small grains after the subsequent deposition of bulk layers. The temperature of the substrate can be increased during deposition of the nucleation layer and then lowered for deposition of the bulk layer to produce a small grain tungsten film. Additionally, the thickness of the nucleation layer can be controlled, and the deposition chamber pressure and silage flow rates can also be controlled to achieve the desired nucleation layer before deposition of the bulk layers.

摘要翻译： 提供了用于沉积具有小粒度的钨膜的化学气相沉积工艺。 该方法包括沉积具有非常小的核的成核层，其具有紧密间隔，使得在表面上几乎没有空位。 这样的成核层在随后沉积体层之后产生具有小晶粒的膜。 可以在沉积成核层期间增加基底的温度，然后降低沉积本体层以产生小晶粒钨膜。 此外，可以控制成核层的厚度，并且还可以控制沉积室压力和青贮饲料流速以在堆积层之前实现期望的成核层。

公开(公告)号：US08647993B2

公开(公告)日：2014-02-11

申请号：US13472282

申请日：2012-05-15

申请人： Adrien LaVoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien LaVoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US07981810B1

公开(公告)日：2011-07-19

申请号：US11449983

申请日：2006-06-08

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/31

CPC分类号： H01L21/3146 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

摘要： The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

摘要翻译： 本发明通过提供一种用于形成对下层具有高等离子体蚀刻选择性的透明PECVD沉积可吸入硬掩模（AHM）的方法来满足这一需要。 本发明的方法包括使用稀烃前体气流和/或低工艺温度沉积AHM。 所生产的AHM是透明的（在某些实施方案中吸收系数小于0.1）。 AHM还具有硬掩模膜对下层的高选择性，成功地将薄膜整合的性质，并且适用于193nm生成和低于光刻方案的应用，其中硬掩模对下层的高选择性为 需要。 较低的温度过程还可以降低晶片的整体热预算。

公开(公告)号：US07981777B1

公开(公告)日：2011-07-19

申请号：US11710377

申请日：2007-02-22

申请人： Pramod Subramonium ,  Yongsik Yu ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Yongsik Yu ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/00

CPC分类号： H01L21/0332 ,  C23C16/26 ,  C23C16/509 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.

摘要翻译： 本发明提供了用于形成稳定和密封的可嚼硬掩模（AHM）的PECVD方法。 这些方法涉及使用稀烃前体气体流和/或高LFRF / HFRF比来沉积AHM。 在某些实施方案中，AHM是透明的并且具有高蚀刻选择性。 还提供单层和双层密封AHM堆叠。 根据各种实施例，双层堆叠包括具有可调光学特性的底层AHM层和密封盖层。

公开(公告)号：US06821407B1

公开(公告)日：2004-11-23

申请号：US10231147

申请日：2002-08-27

申请人： Jonathan D. Reid ,  Timothy Mark Archer ,  Thomas Tan Vu ,  Seshasayee Varadarajan ,  Jon Henri ,  Steven T. Mayer ,  David Sauer ,  Anita Kang ,  Gerald Feldewerth

发明人： Jonathan D. Reid ,  Timothy Mark Archer ,  Thomas Tan Vu ,  Seshasayee Varadarajan ,  Jon Henri ,  Steven T. Mayer ,  David Sauer ,  Anita Kang ,  Gerald Feldewerth

IPC分类号： C25D338

CPC分类号： C25D21/12 ,  C25D17/002 ,  C25D17/12 ,  C25F7/00 ,  H05K3/241

摘要： An electroplating system includes (a) a phosphorized anode having an average grain size of at least about 50 micrometers and (b) plating apparatus that separates the anode from the cathode and prevents most particles generated at the anode from passing to the cathode. The separation may be accomplished by interposing a microporous chemical transport barrier between the anode and cathode. The relatively few particles that are generated at the large grain phosphorized copper anode are prevented from passing into the cathode (wafer) chamber area and thereby causing a defect in the part.

摘要翻译： 电镀系统包括（a）平均晶粒尺寸为至少约50微米的磷化阳极和（b）将阳极与阴极分离的电镀装置，并防止在阳极处产生的大多数颗粒通过阴极。 分离可以通过在阳极和阴极之间插入微孔化学传输阻挡层来实现。 在大晶粒磷化铜阳极处产生的相对较少的颗粒被阻止进入阴极（晶片）室区域，从而导致该部分的缺陷。

公开(公告)号：US09034142B2

公开(公告)日：2015-05-19

申请号：US12642497

申请日：2009-12-18

申请人： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

发明人： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

IPC分类号： C23C16/52 ,  H01L21/306 ,  C23C16/455 ,  C23C16/44

CPC分类号： C23C16/52 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/458 ,  C23C16/46

摘要： A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.

摘要翻译： 用于化学气相沉积（CVD）室的温度控制喷淋头组件增强散热以提供喷头面板的精确的温度控制并保持温度显着低于周围部件。 热量通过喷淋头传导并通过安装在真空环境外的热交换器除去。 热量由插入淋浴头蒸汽的加热元件提供。 使用由安装在杆上的温度传感器提供的反馈并与面板进行热接触来控制温度。

公开(公告)号：US08637411B2

公开(公告)日：2014-01-28

申请号：US13242084

申请日：2011-09-23

申请人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/311

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US08592328B2

公开(公告)日：2013-11-26

申请号：US13414619

申请日：2012-03-07

申请人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

发明人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

IPC分类号： H01L21/471 ,  H05H1/24

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.