摘要:
The burn-in test device has a multiplicity of test receptacles (101, 102, 103, 104 . . . ) in a test board for receiving semiconductor memories. The test board is wired alternately in such a way that burn-in pulses can be applied to the semiconductor modules in dependence on its organization, with the result that the burn-in pulses are applied in each case to the total number of input/output lines.
摘要:
A burn-in system uses a board for testing modules disposed like a matrix in the board. A circuit configuration includes module terminals for the modules in the board. Input/output channels are each connected to a respective one of the module terminals. Diodes are each connected to a respective one of the input/output channels. A scan signal terminal is connected to the diodes for activating the module terminals in groups with scan signals.
摘要:
A method of manufacturing cleaning solvents is provided. The method includes selecting a small plurality of test solvents from a large plurality of perspective solvents. The equilibrium composition of a multi-component solution is preferably described by the Hansen solubility model. A small plurality of test solvents is applied to solute samples and the degree of dissolution or swelling recorded. Based on the degree of dissolution or swelling, at least one solvent is selected from the large plurality of perspective solvents based on the Hansen parameters.
摘要:
A droplet-free wear-resistant coating is manufactured by depositing a wear resistant nitride coating containing a nitride layer which contains at least one metal or metal compound of a metal selected from the group consisting of Ti, Cr, Al, Si and combinations thereof, on a surface of a substrate by cathodic-arc evaporation using a Venetian blind filter system in front of an arc cathode; to reduce metal microdroplets and/or metal microparticles in the wear resistant coating compared to an wear resistant coating obtained without a Venetian blind filter system.
摘要:
An UHT asceptic process for producing a range of infant food products comprises at least two steps, wherein, in a first stage, vegetables are cooked and meat or fish is cooked separately from the vegetables to provide pre-cooked ingredients are mixed and submitted to UHT processing at a temperature of about 130° C. to 140° C. for a time of about 30 seconds to about 240 seconds to sterilize the product and filled aseptically into plastics containers.
摘要:
A method of improving the effectiveness of semiconductor cleaning solvents is provided. Insoluble gas bubbles, typically air, hinder wet chemical cleaning methods. Preferred embodiments include purging a first, insoluble gas from the cleaning system and replacing it with a second, soluble gas. After replacing the first gas with the second gas, the wafer is rinsed in the cleaning solvent. Any gas bubbles trapped within narrow, recessed features during cleaning rapidly dissolve due to the second gas's solubility. Temperature adjustments during the process may further enhance cleaning.
摘要:
An adjusting mechanism includes a first sub-assembly, a bolt disposed on the first sub-assembly and a second sub-assembly. The bolt is configured to receive a force in a radial direction relative to an axis of the bolt. The second sub-assembly is mounted so as to be rotatable relative to the first sub-assembly by means of the bolt. The rotatability of the second sub-assembly relative to the first sub-assembly is configured to be reduced by a positive connection created using plastic deformation between the bolt and at least one of the first sub-assembly and the second sub-assembly.
摘要:
An adjusting mechanism includes a first sub-assembly, a bolt disposed on the first sub-assembly and a second sub-assembly. The bolt is configured to receive a force in a radial direction relative to an axis of the bolt. The second sub-assembly is mounted so as to be rotatable relative to the first sub-assembly by means of the bolt. The rotatability of the second sub-assembly relative to the first sub-assembly is configured to be reduced by a positive connection created using plastic deformation between the bolt and at least one of the first sub-assembly and the second sub-assembly.
摘要:
A method of repairing damaged low-k dielectric materials is disclosed. Plasma-based processes, which are commonly used in semiconductor device manufacturing, frequently damage carbon-containing, low-k dielectric materials. Upon exposure to moisture, the damaged dielectric material may form silanol groups. In preferred embodiments, a two-step approach converts the silanol to a suitable organic group. The first step includes using a halogenating reagent to convert the silanol to a silicon halide. The second step includes using a derivatization reagent, preferably an organometallic compound, to replace the halide with the suitable organic group. In a preferred embodiment, the halogenating agent includes thionyl chloride and the organometallic compound includes an alkyllithium, preferably methyllithium. In another preferred embodiment, the organometallic compound comprises a Grignard reagent. Embodiments disclosed herein advantageously enable the manufacturer to engineer the density, polarization, and ionization properties of the low-k dielectric material by selective incorporation of the organic group.
摘要:
An enhancer has been located in the upstream region of the major immediate early gene of human cytomegalovirus and has been isolated, which enhancer is more active than that from SV40 and has a wide host cell spectrum. Hence, it is suitable for eukaryotic expression systems wherein it can be incorporated upstream or downstream of the structural gene or of the regulation region.