公开(公告)号：US5703521A

公开(公告)日：1997-12-30

申请号：US625634

申请日：1996-03-29

申请人： Josef-Matthias Gantioler ,  Holger Heil ,  Jenoe Tihanyi

发明人： Josef-Matthias Gantioler ,  Holger Heil ,  Jenoe Tihanyi

IPC分类号： G01K7/01 ,  H01L21/822 ,  H01L27/04 ,  H01L35/00 ,  H03K5/153

CPC分类号： G01K7/01

摘要： The temperature of a power semiconductor component is monitored by feeding the block current of a bipolar transistor which is in thermal contact with the component to an amplifying current mirror. The output signal of the current mirror is compared with a reference current. If the mirrored current is greater than the reference current, then the system produces a corresponding output. Temperatures of the power semiconductor component below 140.degree. C. can be reliably detected.

摘要翻译： 通过将与元件热接触的双极晶体管的块电流馈送到放大电流镜来监测功率半导体元件的温度。 将电流镜的输出信号与参考电流进行比较。 如果镜像电流大于参考电流，则系统产生相应的输出。 可以可靠地检测低于140℃的功率半导体组件的温度。

公开(公告)号：US5072143A

公开(公告)日：1991-12-10

申请号：US550460

申请日：1990-07-10

申请人： Josef-Matthias Gantioler ,  Jenoe Tihanyi

发明人： Josef-Matthias Gantioler ,  Jenoe Tihanyi

IPC分类号： H03K17/13 ,  H03K17/79

CPC分类号： H03K17/79 ,  H03K17/136

摘要： A thyristor is controlled by a phototransistor whose photo current is reduced by a MOSFET if the thyristor voltage surpasses a prescribed value. The MOSFET is controlled by two current supplies. The first current supply is connected between a gate terminal and a connecting terminal of the thyristor. The second current supply is connected between the gate and source of the MOSFET. The maximum current capacity of the first current supply is greater than the maximum current capacity of the second current supply.

摘要翻译： 如果晶闸管电压超过规定值，则晶体管由光电晶体管控制，其光电流由MOSFET减少。 MOSFET由两个电流源控制。 第一电流源连接在晶闸管的栅极端子和连接端子之间。 第二个电流源连接在MOSFET的栅极和源极之间。 第一电流源的最大电流容量大于第二电流源的最大电流容量。

公开(公告)号：US5726478A

公开(公告)日：1998-03-10

申请号：US769348

申请日：1996-12-19

申请人： Josef-Matthias Gantioler ,  Ludwig Leipold ,  Rainald Sander ,  Jens-Peer Stengl ,  Jenoe Tihanyi

发明人： Josef-Matthias Gantioler ,  Ludwig Leipold ,  Rainald Sander ,  Jens-Peer Stengl ,  Jenoe Tihanyi

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L23/62

CPC分类号： H01L27/0251 ,  H01L2924/0002

摘要： An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.

摘要翻译： 集成功率半导体元件包括第一导电类型的衬底。 至少一个第二导电类型的第一区域被嵌入衬底中，并且第二导电类型的至少一个第二区域被嵌入衬底中。 基板触点提供电源电压。 接触半导体部件嵌入在第一区域和第二区域中。 第一区域中的半导体部件的至少一部分控制第二区域中的至少一部分半导体部件。 第二导电类型的第三区域设置在第一区域和第二区域之间，并且第一区域和第三区域处于不同的电位。

公开(公告)号：US5633515A

公开(公告)日：1997-05-27

申请号：US398126

申请日：1995-03-03

申请人： Josef-Matthias Gantioler ,  Alfred Porst ,  Jenoe Tihanyi ,  Hans Stut, deceased

发明人： Josef-Matthias Gantioler ,  Alfred Porst ,  Jenoe Tihanyi ,  Hans Stut, deceased

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H01L29/739 ,  H01L29/78 ,  H01C27/02

CPC分类号： H01L27/0255 ,  H01L29/7395 ,  H01L2924/0002

摘要： MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode connected to the component having a limiting diode with a breakdown voltage that is lower than the breakdown voltage of the freewheeling diode by a defined amount is provided. This over-voltage protection can be achieved in a simple way by integrating the limiting diode into the semiconductor body of the freewheeling diode and by a corresponding arrangement of the anode zone of the limiting diode.

摘要翻译： 提供了通过插在漏极或集电极端子和栅极端子之间的限制二极管来防止过压的MOSFET和IGBT元件。 提供连接到具有限制二极管的元件的续流二极管，其击穿电压低于续流二极管的击穿电压一定的量。 这种过电压保护可以通过将限制二极管集成到续流二极管的半导体本体中并通过限制二极管的阳极区的相应布置以简单的方式实现。

公开(公告)号：US5446406A

公开(公告)日：1995-08-29

申请号：US195158

申请日：1994-02-10

申请人： Josef-Matthias Gantioler ,  Jenoe Tihanyi

发明人： Josef-Matthias Gantioler ,  Jenoe Tihanyi

IPC分类号： H03K17/06 ,  H03K17/687

CPC分类号： H03K17/063 ,  H03K17/687 ,  H03K2217/0063

摘要： A control circuit for an MOS semiconductor component having gate and source terminals has a load connected in series with the source terminal. A voltage source at fluctuating potential has first and second terminals. A first controllable semiconductor switch has a control input and is connected between the first terminal of the voltage source and the gate terminal of the MOS semiconductor component. The second terminal of the voltage source is connected to the source terminal of the MOS semiconductor component. A second switch is controllable by an input signal and has first and second load terminals. A line is connected to a fixed potential and to the first load terminal of the second switch. The second load terminal of the second switch is switched from a first to a second potential as a function of the input signal. The first and second potentials are between potentials of the first and second terminals of the voltage source. The first and second potentials are applied to the control input of the first switch for making the first switch conducting whenever an input signal is applied.

摘要翻译： 具有栅极和源极端子的MOS半导体元件的控制电路具有与源极端子串联连接的负载。 波动电位的电压源具有第一和第二端子。 第一可控半导体开关具有控制输入并连接在电压源的第一端和MOS半导体元件的栅极端之间。 电压源的第二端子连接到MOS半导体部件的源极端子。 第二开关由输入信号控制，并具有第一和第二负载端子。 线路连接到固定电位并连接到第二开关的第一负载端子。 第二开关的第二负载端子作为输入信号的函数从第一电位切换到第二电位。 第一和第二电位在电压源的第一和第二端子的电位之间。 第一和第二电位被施加到第一开关的控制输入端，用于仅当施加输入信号时使第一开关导通。

公开(公告)号：US06891204B2

公开(公告)日：2005-05-10

申请号：US09816927

申请日：2001-03-23

申请人： Heinrich Brunner ,  Franz Auerbach ,  Jenoe Tihanyi

发明人： Heinrich Brunner ,  Franz Auerbach ,  Jenoe Tihanyi

IPC分类号： H01L29/744 ,  H01L29/06 ,  H01L29/78 ,  H01L29/32 ,  H01L29/423

CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/7802

摘要： A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.

摘要翻译： 半导体元件具有第一导电类型的半导体本体。 半导体本体具有嵌入第二导电类型的区域。 第二导电类型的其他区域像井一样围绕第二导电类型的区域。 另外的区域通过由半导体本体形成的沟道在至少一个位置处中断。 另外的区域掺杂了足够高的掺杂浓度，使得当半导体元件被重新偏置时，其他区域不会完全耗尽电荷载流子。

公开(公告)号：US20050082591A1

公开(公告)日：2005-04-21

申请号：US10927948

申请日：2004-08-27

申请人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

发明人： Franz Hirler ,  Ralf Henninger ,  Frank Pfirsch ,  Markus Zundel ,  Jenoe Tihanyi

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/407 ,  H01L29/7813 ,  H01L29/861

摘要： The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: a semiconductor body (100) having a first side (101) and a second side (102), a drift zone (30) of a first conduction type which is arranged in the region between the first and the second sides (101, 102) and is formed for the purpose of taking up a reverse voltage, a field electrode arrangement arranged in the drift zone (30) and having at least one electrically conducted field electrode (40; 40A-40E; 90A-90J) arranged in a manner insulated from the semiconductor body (100), an electrical potential of the at least one field electrode (40; 40A-40E; 90A-90J) varying in the vertical direction of the semiconductor body (100) at least when a reverse voltage is applied.

摘要翻译： 本发明涉及一种用于制造垂直半导体部件和具有以下特征的垂直半导体部件的漂移区的方法：具有第一侧（101）和第二侧（102）的半导体本体（100），漂移 第一导电类型的区域（30）布置在第一和第二侧面（101,102）之间的区域中并且被形成为用于吸收反向电压的目的，设置在漂移区域中的场电极布置（ 30），并且具有以与半导体本体（100）绝缘的方式布置的至少一个导电场电极（40; 40A-40E; 90A-90J），所述至少一个场电极 40; 40A-40E; 90A-90J），至少在施加反向电压时，在半导体本体（100）的垂直方向上变化。

公开(公告)号：US06717788B2

公开(公告)日：2004-04-06

申请号：US09784766

申请日：2001-02-15

申请人： Peter Sommer ,  Jenoe Tihanyi

发明人： Peter Sommer ,  Jenoe Tihanyi

IPC分类号： H02H504

CPC分类号： H03K17/18 ,  H01L27/0248 ,  H01L2924/0002 ,  H03K17/0822 ,  H03K2017/0806 ,  H01L2924/00

摘要： A temperature-protected semiconductor circuit configuration that has an integrated switching unit. The switching unit is formed of a semiconductor switch, a first integrated temperature sensor for driving the semiconductor switch when an over-temperature is reached, first and second connecting terminals for connecting a load, and a control terminal for applying a drive signal for the semiconductor switch. A second temperature sensor is connected in a heat-conducting manner to the switching unit which exhibits at least one output terminal for providing a temperature-dependent temperature signal.

摘要翻译： 具有集成开关单元的温度保护半导体电路配置。 开关单元由半导体开关构成，当达到过温时用于驱动半导体开关的第一集成温度传感器，用于连接负载的第一和第二连接端子以及用于施加用于半导体的驱动信号的控制端子 开关。 第二温度传感器以导热方式连接到具有至少一个输出端子的开关单元，用于提供与温度相关的温度信号。

公开(公告)号：US06693314B2

公开(公告)日：2004-02-17

申请号：US09888037

申请日：2001-06-22

申请人： Heinz Mitlehner ,  Dietrich Stephani ,  Jenoe Tihanyi

发明人： Heinz Mitlehner ,  Dietrich Stephani ,  Jenoe Tihanyi

IPC分类号： H01L2980

CPC分类号： H01L29/8083

摘要： A junction field-effect transistor containing a semiconductor region with an inner region is described. In addition, a first and a second connecting region, respectively, are disposed within the semiconductor region. The first connecting region has the same conductivity type as the inner region, but in a higher doping concentration. The second connecting region has the opposite conductivity type to that of the inner region. This reduces the forward resistance while at the same time maintaining a high reverse voltage strength.

摘要翻译： 描述了包含具有内部区域的半导体区域的结型场效应晶体管。 此外，第一和第二连接区域分别设置在半导体区域内。 第一连接区域具有与内部区域相同的导电类型，但是掺杂浓度较高。 第二连接区域具有与内部区域相反的导电类型。 这降低了正向电阻，同时保持了高的反向电压强度。

公开(公告)号：US06479876B1

公开(公告)日：2002-11-12

申请号：US09462759

申请日：2000-10-12

申请人： Gerald Deboy ,  Jenoe Tihanyi

发明人： Gerald Deboy ,  Jenoe Tihanyi

IPC分类号： H01L2976

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/167 ,  H01L29/32

摘要： The invention relates to a vertical power MOSFET having additional column-like zones (11, 12) which are arranged in an inner zone (1) and have the same and the opposite conductivity type as/to the inner zone (1). The charge carrier life is reduced in the additional zones (12), which are of the same conductivity type as the inner zone (1), and the inner zone (1) is dimensioned such that the space charge zone does not reach the junction between the inner zone and a drain zone.

摘要翻译： 本发明涉及具有附加的柱状区域（11,12）的垂直功率MOSFET，其布置在内部区域（1）中并且具有与内部区域（1）相同的导电类型。 在与内部区域（1）具有相同导电类型的附加区域（12）中减少电荷载体寿命，并且内部区域（1）的尺寸被设计成使得空间电荷区域不会到达 内部区域和排水区域。