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公开(公告)号：US06994946B2
公开(公告)日：2006-02-07
申请号：US10853783
申请日：2004-05-26
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
CPC分类号： G03F7/0758 , C08F30/08 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/109 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/143
摘要： Novel silicon-containing polymers are provided comprising recurring units having a POSS pendant and units which improve alkali solubility under the action of an acid. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of up to 300 nm and improved resistance to oxygen plasma etching.
摘要翻译： 提供了新的含硅聚合物，其包含具有POSS侧链的重复单元和在酸的作用下改善碱溶解性的单元。 包含聚合物的抗蚀剂组合物对高能辐射敏感，并且在高达300nm的波长下具有高灵敏度和分辨率，并提高了对氧等离子体蚀刻的耐受性。
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公开(公告)号：US20060014106A1
公开(公告)日：2006-01-19
申请号：US11180703
申请日：2005-07-14
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
IPC分类号： G03C5/00
摘要： An undercoat-forming material comprising a copolymer derived from an indene and a compound having a hydroxyl or epoxy group and a double bond, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect, has an absorptivity coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 and Cl2/BCl3 gases for substrate processing.
摘要翻译： 包含衍生自茚和具有羟基或环氧基和双键的化合物的共聚物的底涂层形成材料，有机溶剂，酸产生剂和交联剂，任选地与具有抗反射效果的中间层组合，具有 吸收系数足以提供厚度至少为200nm的抗反射效果和高耐腐蚀性，如通过CF 4 / CH 3 3和CCl 3的缓慢蚀刻速率所证明的 气体用于基板处理。
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公开(公告)号：US06746817B2
公开(公告)日：2004-06-08
申请号：US09984726
申请日：2001-10-31
IPC分类号： G03C173
CPC分类号： C08K5/13 , C08F232/08 , C08K5/36 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A polymer comprises recurring units of formula (1) and recurring units having acid labile groups which units increase alkali solubility as a result of the acid labile groups being decomposed under the action of acid, and has a Mw of 1,000-500,000. R1 and R2 each are hydrogen, hydroxyl, hydroxyalkyl, alkyl, alkoxy or halogen, and n is 0, 1, 2, 3 or 4. The polymer is useful as a base resin to form a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, and high etching resistance and is best suited as a micropatterning material for use in VLSI manufacture.
摘要翻译： 聚合物包含式（1）的重复单元和具有酸不稳定基团的重复单元，该单元由于酸不稳定基团在酸的作用下分解而增加碱溶解度，并且具有1,000-500,000的Mw .R <1 >和R 2各自为氢，羟基，羟基烷基，烷基，烷氧基或卤素，n为0,1,2,3或4.该聚合物可用作基础树脂以形成化学增强正性抗蚀剂组合物 其具有显着增强曝光前后碱溶解速度对比度，高灵敏度，高分辨率和高耐腐蚀性的优点，并且最适用于用于VLSI制造的微图案材料。
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公开(公告)号：US07491483B2
公开(公告)日：2009-02-17
申请号：US11713763
申请日：2007-03-05
申请人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
发明人： Jun Hatakeyama , Takeshi Kinsho , Takanobu Takeda
CPC分类号： G03F7/0397 , C08F222/20 , C08F224/00 , C08F232/00 , C08F232/08 , Y10S430/106 , Y10S430/111
摘要： A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.
摘要翻译： 聚合物由羟基乙烯基萘的重复单元，具有与桥环稠合的内酯环的（甲基）丙烯酸单元和具有酸不稳定基的（甲基）丙烯酸单元组成。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影过程中控制的膨胀引起的最小线边缘粗糙度。
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5.发明申请Novel polymer, positive resist composition and patterning process using the same 审中-公开新型聚合物，正型抗蚀剂组合物和使用其的图案化工艺公开(公告)号：US20080020289A1
公开(公告)日：2008-01-24
申请号：US11808684
申请日：2007-06-12
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/38 , C08F2220/1891 , G03F7/0392
摘要： There is disclosed a polymer comprising: at least, a repeating unit of substitutable hydroxy styrene and a repeating unit of substitutable hydroxy vinylnaphthalene which are represented by the following general formula (1). There can be provided a polymer suitable as a base resin of a positive resist composition, in particular, a chemically amplified positive resist composition that can exhibit higher resolution than conventional positive resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; a positive resist composition and a patterning process that use the polymer.
摘要翻译： 公开了一种聚合物，其包括：至少可以由以下通式（1）表示的可取代羟基苯乙烯的重复单元和可取代的羟基乙烯基萘的重复单元。 可以提供适合作为正性抗蚀剂组合物的基础树脂的聚合物，特别是可以表现出比常规正性抗蚀剂组合物更高分辨率的化学放大型正性抗蚀剂组合物的聚合物，其在曝光后提供优异的图案轮廓并且表现出优异的蚀刻 抵抗性; 正性抗蚀剂组合物和使用聚合物的图案化工艺。
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公开(公告)号：US06902772B2
公开(公告)日：2005-06-07
申请号：US10611014
申请日：2003-07-02
IPC分类号： C08F222/06 , C08F230/08 , C08F232/08 , C08G77/442 , G03F7/039 , G03F7/075 , H01L21/027 , C08J7/04
CPC分类号： C08F230/08 , C08G77/442 , G03F7/0395 , G03F7/0758
摘要： Silicon-containing polymers comprising recurring units of three components represented by the general formula (1) are novel wherein R1, R2 and R3 are hydrogen or C1-10 alkyl, R4, R5 and R6 are hydrogen, C1-20 alkyl or haloalkyl, or C6-20 aryl, R7 is C4-20 alkyl, n is 1 to 5, p, q and r are positive numbers. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching
摘要翻译： 包含由通式（1）表示的三个组分的重复单元的含硅聚合物是新的，其中R 1，R 2和R 3， 是氢或C 1-10烷基，R 4，R 5和R 6是氢，C 1〜 C 1-20烷基或卤代烷基，或C 6-20芳基，R 7是C 1-4-20烃基， n为1〜5，p，q，r为正数。 包含聚合物的抗蚀剂组合物对高能辐射敏感，并且在小于300nm的波长下具有高灵敏度和分辨率，并改善了对氧等离子体蚀刻的耐受性
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公开(公告)号：US6156481A
公开(公告)日：2000-12-05
申请号：US428911
申请日：1999-10-28
申请人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Youichi Ohsawa , Toshinobu Ishihara
发明人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Youichi Ohsawa , Toshinobu Ishihara
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/111
摘要： A hydroxystyrene-(meth)acrylate copolymer in which some phenolic hydroxyl groups are crosslinked with acid labile groups is blended as a base resin in a positive resist composition, which has the advantages of enhanced dissolution inhibition and an increased dissolution contrast after exposure.
摘要翻译： 将一些酚羟基与酸不稳定基团交联的羟基苯乙烯 - （甲基）丙烯酸酯共聚物作为基础树脂掺入正性抗蚀剂组合物中，其具有增强的溶解抑制和暴露后溶解度增加的优点。
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公开(公告)号：US07923195B2
公开(公告)日：2011-04-12
申请号：US12320266
申请日：2009-01-22
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： The present invention provides a polymer suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).
摘要翻译： 本发明提供了适合作为正型抗蚀剂组合物的基础树脂的聚合物，特别是用于具有高灵敏度，高分辨率，曝光后的良好图案构造的化学增幅正性抗蚀剂组合物的基础树脂，另外还具有优异的蚀刻 抵抗性; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。 本发明的正型抗蚀剂组合物的特征在于，至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式（1）表示的酸不稳定基团取代的聚合物。
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公开(公告)号：US07745104B2
公开(公告)日：2010-06-29
申请号：US11822805
申请日：2007-07-10
申请人： Jun Hatakeyama , Toshihiko Fujii , Takanobu Takeda
发明人： Jun Hatakeyama , Toshihiko Fujii , Takanobu Takeda
CPC分类号： G03F7/091
摘要： There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.
摘要翻译： 公开了用于光刻的多层抗蚀剂膜的底部抗蚀剂层组合物，其包含至少包含由以下通式（1）表示的重复单元的聚合物。 因此，可以提供一种底部抗蚀剂层组合物，其在暴露于较短波长时表现出最佳n值和k值，在蚀刻基板的条件下具有优异的耐蚀刻性，并且有希望形成用于多层抗蚀剂工艺的底部抗蚀剂层 例如含硅双层抗蚀剂工艺或使用含硅中间抗蚀剂层的三层抗蚀剂工艺。
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公开(公告)号：US20090202940A1
公开(公告)日：2009-08-13
申请号：US12320265
申请日：2009-01-22
申请人： Jun Hatakeyama , Takanobu Takeda
发明人： Jun Hatakeyama , Takanobu Takeda
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： The present invention provides a polymer, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance, suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).
摘要翻译： 本发明提供一种聚合物，其具有高灵敏度，高分辨率，曝光后良好的图案构造，另外具有优异的抗蚀刻性，适合作为正性抗蚀剂组合物的基础树脂，特别是用于化学放大阳性 抗蚀剂组成; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。 本发明的正型抗蚀剂组合物的特征在于，至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式（1）表示的酸不稳定基团取代的聚合物。
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