公开(公告)号：US20230088864A1

公开(公告)日：2023-03-23

申请号：US17687379

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Yuta KAMIYA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Masaya TODA ,  Tomoki ISHIMARU

IPC: H01L27/108 ,  H01L49/02 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor memory device according to an embodiment includes: a first oxide semiconductor layer between a first conductive layer and a second conductive layer; a first gate electrode; a first electrode; a second electrode; a first capacitor insulating film between the first electrode and the second electrode including a first region and a second region between the first region and the second electrode, concentration of the Ti is higher in the second region than the first region; a third conductive layer; a second oxide semiconductor layer between the third conductive layer and a fourth conductive layer; a second gate electrode; a third electrode; a fourth electrode; and a second capacitor insulating film between the third electrode and the fourth electrode, and including a third region and a fourth region between the third region and the fourth electrode, concentration of Ti is higher in the fourth region than the third region.

公开(公告)号：US20230328957A1

公开(公告)日：2023-10-12

申请号：US17929422

申请日：2022-09-02

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Tomoki ISHIMARU ,  Ha HOANG ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Takafumi OCHIAI ,  Shoji HONDA ,  Kenichiro TORATANI ,  Kiwamu SAKUMA ,  Taro SHIOKAWA ,  Mutsumi OKAJIMA

IPC: H01L27/108

CPC classification number: H01L27/10805

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, spaced from the first electrode, and containing nitrogen (N). In addition, a first distance between the first electrode and the gate insulating layer in a first direction from the first electrode to the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.

公开(公告)号：US20230307520A1

公开(公告)日：2023-09-28

申请号：US17898224

申请日：2022-08-29

Applicant: KIOXIA CORPORATION

Inventor： Takuya KIKUCHI ,  Yuya NAGATA ,  Masaya TODA ,  Kappei IMAMURA ,  Tsubasa IMAMURA

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/1225

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming an electrode layer on a film containing indium and etching portions of the electrode layer left exposed by a mask layer until at least a portion of the film is exposed. A spacer film is formed to cover an upper surface of the electrode layer, side surfaces of the electrode layer, and an exposed upper surface of the film. The spacer film on the upper surface of the electrode layer and the exposed upper surface of the film is removed while leaving the spacer film on the side surfaces of the electrode layer. The exposed upper surface of the film is exposed to a reductive gas plasma to reduce portions of the film. These reduced portions of the film are then etched with a chemical solution.

公开(公告)号：US20240324170A1

公开(公告)日：2024-09-26

申请号：US18589286

申请日：2024-02-27

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Kazuhiro MATSUO ,  Ha HOANG ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Wakako MORIYAMA

IPC: H10B12/00

CPC classification number: H10B12/05 ,  H10B12/33

Abstract: A semiconductor device manufacturing method includes transferring a substrate including a structure that has a first surface at which indium is exposed, and a second surface at which a metal is exposed, to a chamber of a film forming device, supplying an indium reducing gas to the chamber at a first temperature at which indium is able to transition to a gaseous state, and supplying a film forming gas to the chamber at a second temperature higher than the first temperature to form a first film on the first surface and the second surface, after supplying the reducing gas.

公开(公告)号：US20240321995A1

公开(公告)日：2024-09-26

申请号：US18341865

申请日：2023-06-27

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Shosuke FUJII ,  Shoichi KABUYANAGI ,  Masayuki TANAKA ,  Wakako MORIYAMA

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L29/4908 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/78696 ,  H10B12/30 ,  H10B12/33 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/42392 ,  H01L29/7869

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing the third region; a first insulating layer facing the first region; a second insulating layer facing the second region; and a gate insulating layer between the gate electrode and the oxide semiconductor layer, containing oxygen (O) and at least one metal element selected from a group consisting of Al, Hf, Zr, La, Y, Zn, In, Sn, and Ga, and having a chemical composition different from that of the oxide semiconductor layer.

公开(公告)号：US20230197857A1

公开(公告)日：2023-06-22

申请号：US17842457

申请日：2022-06-16

Applicant: Kioxia Corporation

Inventor： Taro SHIOKAWA ,  Kiwamu SAKUMA ,  Keiko SAKUMA ,  Mutsumi OKAJIMA ,  Kazuhiro MATSUO ,  Masaya TODA

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/66

CPC classification number: H01L29/78642 ,  H01L27/1082 ,  H01L29/7869 ,  H01L29/66969 ,  H01L27/10873

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode and including a first region surrounded by the first electrode in a plane perpendicular to a first direction from the first electrode toward the second electrode; a gate electrode facing the oxide semiconductor layer; a gate insulating layer; a first insulating layer between the gate electrode and the first electrode; and a second insulating layer between the gate electrode and the second electrode. A first maximum distance between a first portion of the first electrode and a second portion of the first electrode in a second direction in a cross section parallel to the first direction is larger than a minimum distance between a third portion of the first insulating layer and a fourth portion of the first insulating layer in the second direction.

公开(公告)号：US20250107069A1

公开(公告)日：2025-03-27

申请号：US18884101

申请日：2024-09-12

Applicant: Kioxia Corporation

Inventor： Takeru MAEDA ,  Sakuya KANEKO ,  Kenichiro TORATANI ,  Takafumi OCHIAI ,  Kazuhiro MATSUO ,  Masaya TODA ,  Ha HOANG ,  Kotaro NODA

IPC: H10B12/00 ,  H01L29/786

Abstract: According to one embodiment a semiconductor device includes an oxide semiconductor column that extends in a first direction. A first electrode contacts a first end of the oxide semiconductor column and a second electrode contacts a second end. A gate electrode surrounds a portion of the oxide semiconductor column. A first insulating film is between the gate electrode and the oxide semiconductor column. A second insulating film is between the gate electrode and the first electrode in the first direction and surrounds the oxide semiconductor column via the first insulating film. A region in which at least a part of the oxide semiconductor column is accommodated is formed by the gate electrode and the second insulating film, and the region has a stepped surface facing towards the second electrode.

公开(公告)号：US20250105023A1

公开(公告)日：2025-03-27

申请号：US18817372

申请日：2024-08-28

Applicant: Kioxia Corporation

Inventor： Shunichi YONEDA ,  Kazuhiro MATSUO ,  Masaya TODA ,  Kota TAKAHASHI ,  Masaya NAKATA ,  Kenichiro TORATANI ,  Ha HOANG ,  Takuma DOI ,  Wakako MORIYAMA

IPC: H01L21/46 ,  C23C8/12

Abstract: A manufacturing method includes loading a substrate into a chamber, the substrate including oxide semiconductor; configuring a temperature in the chamber to a first temperature; supplying an oxidizing gas into the chamber; lowering the temperature in the chamber from the first temperature; stopping supplying the oxidizing gas into the chamber after lowering the temperature; and unloading the substrate from the chamber after the temperature in the chamber reaches a second temperature lower than the first temperature.

公开(公告)号：US20240324179A1

公开(公告)日：2024-09-26

申请号：US18599234

申请日：2024-03-08

Applicant: Kioxia Corporation

Inventor： Yusuke MUTO ,  Masaya TODA ,  Yuta SAITO ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Masaya NAKATA ,  Takuma DOI ,  Kenichiro TORATANI

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: The semiconductor device includes a substrate, an oxide semiconductor layer spaced from the substrate in a first direction intersecting with a surface of the substrate, a first wiring opposed to a part of the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the first wiring, a second wiring electrically connected to one end in the first direction of the oxide semiconductor layer, and a first insulating layer disposed on a surface on one side and a surface on the other side in a second direction intersecting with the first direction of the second wiring. The second wiring contains a first metallic element, and the first insulating layer contains the first metallic element and oxygen (O).

公开(公告)号：US20230340667A1

公开(公告)日：2023-10-26

申请号：US18148322

申请日：2022-12-29

Applicant: Kioxia Corporation

Inventor： Tomoki ISHIMARU ,  Masaya TODA ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Kazuhiro MATSUO

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/40

CPC classification number: C23C16/45548 ,  C23C16/45565 ,  C23C16/4412 ,  C23C16/52 ,  C23C16/45527 ,  C23C16/407 ,  H01L21/02565

Abstract: A film forming apparatus of embodiments includes: a chamber including a sidewall; a shower head provided in an upper part of the chamber; a holder provided in the chamber holding a substrate; a first gas supply pipe supplying a first gas to the shower head; a first valve provided in the first gas supply pipe; at least one gas supply portion provided in a region of the chamber other than the shower head; a second gas supply pipe supplying a second gas to the at least one gas supply portion; a second valve provided in the second gas supply pipe; a gas exhaust pipe exhausting a gas from the chamber; and an exhaust device connected to the gas exhaust pipe.