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公开(公告)号:US20240103470A1
公开(公告)日:2024-03-28
申请号:US18456209
申请日:2023-08-25
Applicant: Kioxia Corporation
Inventor: Yuma YOSHINAGA , Atsushi MAESONO , Osamu TORII , Shinichiro TOMIOKA , Shinichiro MANABE
IPC: G05B19/042
CPC classification number: G05B19/042
Abstract: An information processing apparatus that updates a regression coefficient parameter based on a predetermined objective function including a regularization term for each of a plurality of elements characterized by a task and a feature value, the information processing apparatus comprising processing circuitry. The processing circuitry selects an element which is an update target of the regression coefficient parameter from the plurality of elements, fixes a value of the regularization term of an unselected element, selects a calculation expression for updating a regression coefficient parameter of the selected element based on a regression coefficient parameter of the unselected element, and updates the regression coefficient parameter of the selected element based on the selected calculation expression.
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公开(公告)号:US20220270678A1
公开(公告)日:2022-08-25
申请号:US17738069
申请日:2022-05-06
Applicant: KIOXIA CORPORATION
Inventor: Tomonori TAKAHASHI , Masanobu SHIRAKAWA , Osamu TORII , Marie TAKADA
Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
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公开(公告)号:US20240322845A1
公开(公告)日:2024-09-26
申请号:US18680900
申请日:2024-05-31
Applicant: KIOXIA CORPORATION
Inventor: Riki SUZUKI , Toshikatsu HIDA , Osamu TORII , Hiroshi YAO , Kiyotaka IWASAKI
CPC classification number: H03M13/35 , G06F3/0619 , G06F3/064 , G06F3/0653 , G06F3/0679 , G06F11/1008 , G06F11/1044 , G06F11/1048 , G06F11/1068 , G06F11/1076 , G11C29/52 , H03M13/29 , H03M13/2906 , H03M13/2957 , G11B20/1833 , G11C7/1006 , G11C2029/0411
Abstract: According to one embodiment, a nonvolatile memory includes a plurality of memory areas and controller circuit including an error correction code encoder. The error correction code encoder encodes a first data to generate a first parity in a first operation and encodes a second data to generate a second parity in a second operation. The controller circuit writes the first data and the first parity into a first memory area among the plurality of memory areas and writes the second data and the second parity into a second memory area among the plurality of memory areas. The size of the second data is smaller than the size of the first data and the size of the second parity is equal to the size of the first parity.
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公开(公告)号:US20240095306A1
公开(公告)日:2024-03-21
申请号:US18453105
申请日:2023-08-21
Applicant: Kioxia Corporation
Inventor: Osamu TORII , Shinichiro MANABE
IPC: G06F17/18
CPC classification number: G06F17/18
Abstract: An information processing apparatus comprising processing circuitry. The processing circuitry is configured to acquire objective variables and explanatory variables which are regression analysis targets, extract a plurality of first explanatory variables having a high degree of influence on the objective variable from among the explanatory variables by sparse modeling using a first regression equation, and extract a second explanatory variable having a high degree of influence on the plurality of first explanatory variables by sparse modeling using a second regression equation.
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公开(公告)号:US20230306582A1
公开(公告)日:2023-09-28
申请号:US17942752
申请日:2022-09-12
Applicant: Kioxia Corporation
Inventor: Masahiro HAYASHI , Shinichiro MANABE , Osamu TORII , Tatsuya ZETTSU , Hiroshi FUJITA , Ryota YOSHIZAWA
CPC classification number: G06T7/001 , G01N21/9501 , G06T3/40 , G06T5/002 , G06T2207/30148 , G06T2200/24 , G06T2207/20081
Abstract: An information processing apparatus has an objective variable acquirer configured to acquire a multi-dimensional objective variable, an objective variable dimension compressor configured to compress the number of dimensions of the objective variable, an explanatory variable acquirer configured to acquire an explanatory variable, and an influence degree calculator configured to set at least one of a basis characterizing the objective variable and a coefficient weighting the basis as a new objective variable and calculate an influence degree on the new objective variable by using the explanatory variable.
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公开(公告)号:US20230290407A1
公开(公告)日:2023-09-14
申请号:US18321338
申请日:2023-05-22
Applicant: KIOXIA CORPORATION
Inventor: Tomonori TAKAHASHI , Masanobu SHIRAKAWA , Osamu TORII , Marie TAKADA
CPC classification number: G11C11/5671 , G11C16/26 , G11C16/08 , G11C16/0483
Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.
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公开(公告)号:US20230275601A1
公开(公告)日:2023-08-31
申请号:US18312834
申请日:2023-05-05
Applicant: KIOXIA CORPORATION
Inventor: Riki SUZUKI , Toshikatsu HIDA , Osamu TORII , Hiroshi YAO , Kiyotaka IWASAKI
CPC classification number: H03M13/35 , G06F11/1044 , G06F11/1008 , G06F11/1076 , H03M13/29 , H03M13/2957 , H03M13/2906 , G06F11/1048 , G06F3/0619 , G06F3/064 , G06F3/0653 , G06F3/0679 , G06F11/1068 , G11C29/52 , G11C7/1006
Abstract: According to one embodiment, a nonvolatile memory includes a plurality of memory areas and controller circuit including an error correction code encoder. The error correction code encoder encodes a first data to generate a first parity in a first operation and encodes a second data to generate a second parity in a second operation. The controller circuit writes the first data and the first parity into a first memory area among the plurality of memory areas and writes the second data and the second parity into a second memory area among the plurality of memory areas. The size of the second data is smaller than the size of the first data and the size of the second parity is equal to the size of the first parity.
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公开(公告)号:US20210279133A1
公开(公告)日:2021-09-09
申请号:US17184166
申请日:2021-02-24
Applicant: Kioxia Corporation
Inventor: Yuma YOSHINAGA , Tomoya KODAMA , Osamu TORII , Kenichiro FURUTA , Ryota YOSHIZAWA
Abstract: A memory system includes a non-volatile memory and a memory controller. The memory controller is configured to read a received word from the non-volatile memory, estimate noise by using a plurality of different models for estimating the noise included in the received word to obtain a plurality of noise estimation values, select one noise estimation value from the plurality of noise estimation values, update the received word by using a value obtained by subtracting the selected noise estimation value from the read received word, and decode the updated received word by using a belief-propagation method.
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公开(公告)号:US20210242888A1
公开(公告)日:2021-08-05
申请号:US17005270
申请日:2020-08-27
Applicant: KIOXIA CORPORATION
Inventor: Ryota YOSHIZAWA , Kenichiro FURUTA , Yuma YOSHINAGA , Osamu TORII , Tomoya KODAMA
Abstract: According to one embodiment, a learning device includes a noise generation unit, a decoding unit, a generation unit, and a learning unit. The noise generation unit outputs a second code word which corresponds to a first code word to which noise has been added. The decoding unit decodes the second code word and outputs a third code word. The generation unit generates learning data for learning a weight in message passing decoding in which the weight and a message to be transmitted are multiplied, based on whether or not decoding of the second code word into the third code word has been successful. The learning unit determines a value for the weight in the message passing decoding by using the learning data.
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公开(公告)号:US20210089392A1
公开(公告)日:2021-03-25
申请号:US16807220
申请日:2020-03-03
Applicant: Kioxia Corporation
Inventor: Masanobu SHIRAKAWA , Hideki YAMADA , Marie TAKADA , Ryo YAMAKI , Osamu TORII , Naomi TAKEDA
Abstract: According to one embodiment, a memory system controls a shift resister memory and writes encoded data including a plurality of error correction code frames into a block of the shift resister memory. The memory system is configured to store, into a location corresponding to a first layer in a first data storing shift string, first data included in a first error correction code frame, to store, into a location corresponding to a second layer in the first data storing shift string, second data included in a second error correction code frame, and to store, into a location corresponding to the second layer in a second data storing shift string, third data included in the first error correction code frame.
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