TECHNIQUES AND SYSTEMS FOR MODEL-BASED CRITICAL DIMENSION MEASUREMENTS
    1.
    发明申请
    TECHNIQUES AND SYSTEMS FOR MODEL-BASED CRITICAL DIMENSION MEASUREMENTS 有权
    基于模型的关键尺寸测量的技术和系统

    公开(公告)号:US20170069080A1

    公开(公告)日:2017-03-09

    申请号:US15250649

    申请日:2016-08-29

    Abstract: A reticle is inspected with an imaging system to obtain a measured image of a structure on the reticle, and the structure has an unknown critical dimension (CD). Using a model, a calculated image is generated using a design database that describes a pattern used to form the structure on the reticle. The model generates the calculated image based on: optical properties of reticle materials of the structure, a computational model of the imaging system, and an adjustable CD. A norm of a difference between the measured and calculated images is minimized by adjusting the adjustable CD and iteratively repeating the operation of generating a calculated image so as to obtain a final CD for the unknown CD of the structure. Minimizing the norm of the difference is performed simultaneously with respect to the adjustable CD and one or more uncertain parameters of the imaging system.

    Abstract translation: 用成像系统检查掩模版,以获得在光罩上的结构的测量图像,并且该结构具有未知的临界尺寸(CD)。 使用模型,使用描述用于在分划板上形成结构的图案的设计数据库生成计算图像。 该模型基于:结构的标线材料的光学性质,成像系统的计算模型和可调节的CD产生计算的图像。 通过调整可调节的CD并迭代地重复生成计算图像的操作以获得结构的未知CD的最终CD,使得测量和计算的图像之间的差异范围最小化。 相对于可调节CD和成像系统的一个或多个不确定参数同时实现差异范围的最小化。

    Optical Characterization Systems Employing Compact Synchrotron Radiation Sources
    2.
    发明申请
    Optical Characterization Systems Employing Compact Synchrotron Radiation Sources 有权
    使用紧凑型同步辐射源的光学表征系统

    公开(公告)号:US20140048707A1

    公开(公告)日:2014-02-20

    申请号:US13964880

    申请日:2013-08-12

    CPC classification number: H05H13/04 H01J37/02 H05G2/00 H05G2/001 H05H7/04 H05H7/08

    Abstract: A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.

    Abstract translation: 紧凑型同步加速器辐射源包括电子束发生器,电子存储环,沿着电子存储环的一个或多个直线部分设置的一个或多个摆动插入装置,一个或多个摆动插入装置包括一组磁极, 产生适于产生沿着存储环的电子的行进方向发射的同步加速器辐射的周期性交变磁场,其中一个或多个摆动插入装置被布置成向晶片光学表征系统的一组照明光学器件提供光 或掩模光学表征系统,其中由一个或多个摆动插入装置发射的光束的光密度与晶片光学表征系统和掩模光学表征系统中的至少一个的照明光学器件相匹配。

    Techniques and systems for model-based critical dimension measurements

    公开(公告)号:US09875534B2

    公开(公告)日:2018-01-23

    申请号:US15250649

    申请日:2016-08-29

    Abstract: A reticle is inspected with an imaging system to obtain a measured image of a structure on the reticle, and the structure has an unknown critical dimension (CD). Using a model, a calculated image is generated using a design database that describes a pattern used to form the structure on the reticle. The model generates the calculated image based on: optical properties of reticle materials of the structure, a computational model of the imaging system, and an adjustable CD. A norm of a difference between the measured and calculated images is minimized by adjusting the adjustable CD and iteratively repeating the operation of generating a calculated image so as to obtain a final CD for the unknown CD of the structure. Minimizing the norm of the difference is performed simultaneously with respect to the adjustable CD and one or more uncertain parameters of the imaging system.

    CRITICAL DIMENSION UNIFORMITY ENHANCEMENT TECHNIQUES AND APPARATUS
    4.
    发明申请
    CRITICAL DIMENSION UNIFORMITY ENHANCEMENT TECHNIQUES AND APPARATUS 审中-公开
    关键尺寸均匀性增强技术和设备

    公开(公告)号:US20160110858A1

    公开(公告)日:2016-04-21

    申请号:US14884670

    申请日:2015-10-15

    Abstract: Disclosed are methods and apparatus for inspecting a photolithographic reticle. Modeled images of a plurality of target features of the reticle are obtained based on a design database for fabricating the reticle. An inspection tool is used to obtain a plurality of actual images of the target features of the reticle. The modelled and actual images are binned into a plurality of bins based on image properties of the modelled and actual images, and at least some of the image properties are affected by one or more neighbor features of the target features on the reticle in a same manner. The modelled and actual images from at least one of the bins are analyzed to generate a feature characteristic uniformity map for the reticle.

    Abstract translation: 公开了用于检查光刻掩模版的方法和装置。 基于用于制造掩模版的设计数据库获得掩模版的多个目标特征的建模图像。 使用检查工具来获得掩模版的目标特征的多个实际图像。 基于建模和实际图像的图像属性,将建模的和实际的图像分为多个箱,并且至少一些图像属性以相同的方式受到掩模版上的目标特征的一个或多个相邻特征的影响 。 分析来自至少一个箱体的建模和实际图像,以生成分划板的特征特征均匀性图。

    Optical characterization systems employing compact synchrotron radiation sources
    5.
    发明授权
    Optical characterization systems employing compact synchrotron radiation sources 有权
    使用紧凑型同步加速器辐射源的光学表征系统

    公开(公告)号:US08749179B2

    公开(公告)日:2014-06-10

    申请号:US13964880

    申请日:2013-08-12

    CPC classification number: H05H13/04 H01J37/02 H05G2/00 H05G2/001 H05H7/04 H05H7/08

    Abstract: A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.

    Abstract translation: 紧凑型同步加速器辐射源包括电子束发生器,电子存储环,沿着电子存储环的一个或多个直线部分设置的一个或多个摆动插入装置,一个或多个摆动插入装置包括一组磁极, 产生适于产生沿着存储环的电子的行进方向发射的同步加速器辐射的周期性交变磁场,其中一个或多个摆动插入装置被布置成向晶片光学表征系统的一组照明光学器件提供光 或掩模光学表征系统,其中由一个或多个摆动插入装置发射的光束的光密度与晶片光学表征系统和掩模光学表征系统中的至少一个的照明光学器件相匹配。

    Delta die and delta database inspection

    公开(公告)号:US09778205B2

    公开(公告)日:2017-10-03

    申请号:US14664565

    申请日:2015-03-20

    CPC classification number: G01N21/8851 G01N21/95607 G01N2021/95676 G03F1/84

    Abstract: Disclosed are methods and apparatus for inspecting a photolithographic reticle. An inspection tool is used to obtain a plurality of patch area images of each patch area of each die of a set of identical dies on a reticle. An integrated intensity value for each patch area image is determined. A gain is applied to the integrated intensity value for each patch area image based on a pattern sparseness metric of such patch area image and its relative value to other patch area images' pattern sparseness metric. A difference between the integrated intensity value of each patch of pairs of the dies, which each pair includes a test die and a reference die, is determined to form a difference intensity map of the reticle. The difference intensity map correlates with a feature characteristic variation that depends on feature edges of the reticle.

    Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems
    7.
    发明授权
    Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems 有权
    光化学EUV系统中EUV镜面和掩模表面污染的光电监测

    公开(公告)号:US09453801B2

    公开(公告)日:2016-09-27

    申请号:US13898705

    申请日:2013-05-21

    Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.

    Abstract translation: 描述了用于EUV(极紫外)掩模检查和光刻系统的光电子发射测绘系统。 映射系统可用于为EUV光刻掩模和/或EUV反射镜提供光电子发射图。 该系统使用用于掩模检查或光刻的EUV光电子源将EUV光照射在掩模和/或反射镜上。 EUV光在掩模和/或反射镜的表面上产生光电子,并且通过放置在远离EUV室的光学空间的检测器收集和分析光电子。

    DELTA DIE AND DELTA DATABASE INSPECTION
    9.
    发明申请
    DELTA DIE AND DELTA DATABASE INSPECTION 有权
    DELTA DIE和DELTA数据库检查

    公开(公告)号:US20150276617A1

    公开(公告)日:2015-10-01

    申请号:US14664565

    申请日:2015-03-20

    CPC classification number: G01N21/8851 G01N21/95607 G01N2021/95676 G03F1/84

    Abstract: Disclosed are methods and apparatus for inspecting a photolithographic reticle. An inspection tool is used to obtain a plurality of patch area images of each patch area of each die of a set of identical dies on a reticle. An integrated intensity value for each patch area image is determined. A gain is applied to the integrated intensity value for each patch area image based on a pattern sparseness metric of such patch area image and its relative value to other patch area images' pattern sparseness metric. A difference between the integrated intensity value of each patch of pairs of the dies, which each pair includes a test die and a reference die, is determined to form a difference intensity map of the reticle. The difference intensity map correlates with a feature characteristic variation that depends on feature edges of the reticle.

    Abstract translation: 公开了用于检查光刻掩模版的方法和装置。 使用检查工具来获得掩模版上的一组相同模具的每个管芯的每个贴片区域的多个贴片区域图像。 确定每个贴片区域图像的积分强度值。 基于这种贴片区域图像的图案稀疏度及其与其他贴片区域图像的图案稀疏度的相对值,对每个贴片区域图像的积分强度值进行增益。 确定每对包括测试模具和参考模具的每对模具对的积分强度值之间的差异,以形成掩模版的差分强度图。 差分强度图与取决于标线的特征边缘的特征特征变化相关。

    Wave front aberration metrology of optics of EUV mask inspection system
    10.
    发明授权
    Wave front aberration metrology of optics of EUV mask inspection system 有权
    EUV面罩检测系统光学波前像差计量学

    公开(公告)号:US09335206B2

    公开(公告)日:2016-05-10

    申请号:US14010484

    申请日:2013-08-26

    Abstract: Disclosed is test structure for measuring wave-front aberration of an extreme ultraviolet (EUV) inspection system. The test structure includes a substrate formed from a material having substantially no reflectivity for EUV light and a multilayer (ML) stack portion, such as a pillar, formed on the substrate and comprising a plurality of alternating pairs of layers having different refractive indexes so as to reflect EUV light. The pairs have a count equal to or less than 15.

    Abstract translation: 公开了用于测量极紫外(EUV)检测系统的波前像差的测试结构。 测试结构包括由基本上不对EUV光反射的材料形成的基板和形成在基板上的多层(ML)堆叠部分,例如柱状物,并且包括具有不同折射率的多个交替对的层, 反映EUV光。 这些对具有等于或小于15的计数。

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