Abstract:
An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.
Abstract:
A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.
Abstract:
An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.
Abstract:
A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.
Abstract:
An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.
Abstract:
An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.
Abstract:
A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.