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公开(公告)号：US20210011073A1
公开(公告)日：2021-01-14
申请号：US16619847
申请日：2019-07-10
Applicant: KLA-Tencor CORPORATION
Inventor： Shlomit Katz , Roie Volkovich , Anna Golotsvan , Raviv Yohanan
Abstract: A data-driven misregistration parameter configuration and measurement system and method including simulating a plurality of measurement simulations of at least one multilayered semiconductor device, selected from a batch of multilayered semiconductor devices intended to be identical, using sets of measurement parameter configurations, generating simulation data for the device, identifying recommended measurement parameter configurations, selected from sets of measurement parameter configurations, providing a multilayered semiconductor device selected from the batch, providing the at least one recommended set of measurement parameter configurations to a misregistration metrology tool having multiple possible sets of measurement parameter configurations, measuring at least one multilayered semiconductor device, selected from the batch using the recommended set, thereby generating measurement data for the device, thereafter identifying a final recommended set of measurement parameter configurations and measuring misregistration of at least one multilayered semiconductor device, selected from the batch, using the final recommended set.
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公开(公告)号：US10401841B2
公开(公告)日：2019-09-03
申请号：US14867834
申请日：2015-09-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Roie Volkovich , Eran Amit , Raviv Yohanan
IPC: G05B19/418 , G03F7/00 , G03F7/20
Abstract: Methods and respective modules are provided, configured to identify registration errors of DSA lines with respect to guiding lines in a produced structure, by comparing a measured signature of the structure with simulated signatures corresponding to simulated structures having varying simulated characteristics, and characterizing the produced structure according to the comparison. The characterization may be carried out using electromagnetic characterization of a geometric model or in a model-free manner by analyzing model-based results. Thus, for the first time, positioning and dimensional errors of DSA lines may be measured.
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公开(公告)号：US20180299791A1
公开(公告)日：2018-10-18
申请号：US15568304
申请日：2017-08-21
Applicant: KLA-Tencor Corporation
Inventor： Eran Amit , Roie Volkovich , Liran Yerushalmi
IPC: G03F7/20
CPC classification number: G03F7/70625 , G03F7/70483 , G03F7/70491 , G03F7/70525 , G03F7/70533 , G03F7/70616 , G03F7/70633 , G03F7/70991
Abstract: Lithography systems and methods are provided with enhanced performance based on broader utilization of the integrated metrology tool in the printing tool to handle the metrology measurements in the system in a more sophisticated and optimized way. Additional operation channels are disclosed, enabling the integrated metrology tool to monitor and/or allocate metrology measurements thereby and by a standalone metrology tool with respect to specified temporal limitations of the printing tool; to adjust and optimize the metrology measurement recipes; to provide better process control to optimize process parameters of the printing tool; as well as to group process parameters of the printing tool according to a metrology measurements landscape.
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公开(公告)号：US09934353B2
公开(公告)日：2018-04-03
申请号：US14974732
申请日：2015-12-18
Applicant: KLA-Tencor Corporation
Inventor： Mohamed El Kodadi , Nuriel Amir , Roie Volkovich , Vladimir Levinski , Yoel Feler , Daniel Kandel , Nadav Gutman , Stilian Pandev , Dzimtry Sanko
CPC classification number: G06F17/5081 , G01N21/4785 , G03F7/70641 , G03F7/70683 , G06F17/5072
Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.
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公开(公告)号：US11551980B2
公开(公告)日：2023-01-10
申请号：US16470886
申请日：2019-05-19
Applicant: KLA-TENCOR CORPORATION
Inventor： Roie Volkovich , Anna Golotsvan , Eyal Abend
Abstract: A dynamic misregistration measurement amelioration method including taking at least one misregistration measurement at multiple sites on a first semiconductor device wafer, which is selected from a batch of semiconductor device wafers intended to be identical, analyzing each of the misregistration measurements, using data from the analysis of each of the misregistration measurements to determine ameliorated misregistration measurement parameters at each one of the multiple sites, thereafter ameliorating misregistration metrology tool setup for ameliorated misregistration measurement at the each one of the multiple sites, thereby generating an ameliorated misregistration metrology tool setup and thereafter measuring misregistration at multiple sites on a second semiconductor device wafer, which is selected from the batch of semiconductor device wafers intended to be identical, using the ameliorated misregistration metrology tool setup.
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Patent Agency Ranking
公开(公告)号：US11353493B2
公开(公告)日：2022-06-07
申请号：US16619847
申请日：2019-07-10
Applicant: KLA-Tencor CORPORATION
Inventor： Shlomit Katz , Roie Volkovich , Anna Golotsvan , Raviv Yohanan
Abstract: A data-driven misregistration parameter configuration and measurement system and method including simulating a plurality of measurement simulations of at least one multilayered semiconductor device, selected from a batch of multilayered semiconductor devices intended to be identical, using sets of measurement parameter configurations, generating simulation data for the device, identifying recommended measurement parameter configurations selected from sets of measurement parameter configurations, providing a multilayered semiconductor device selected from the batch, providing the at least one recommended set of measurement parameter configurations to a misregistration metrology tool having multiple possible sets of measurement parameter configurations, measuring at least one multilayered semiconductor device, selected from the batch, using the recommended set, thereby generating measurement data for the device, thereafter identifying a final recommended set of measurement parameter configurations and measuring misregistration of at least one multilayered semiconductor device, selected from the batch, using the final recommended set.
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公开(公告)号：US11226566B2
公开(公告)日：2022-01-18
申请号：US17161035
申请日：2021-01-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Roie Volkovich , Ido Dolev
Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.
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公开(公告)号：US11075126B2
公开(公告)日：2021-07-27
申请号：US16477552
申请日：2019-06-04
Applicant: KLA-TENCOR CORPORATION
Inventor： Roie Volkovich , Liran Yerushalmi , Nadav Gutman
Abstract: A misregistration metrology system useful in manufacturing semiconductor device wafers including an optical misregistration metrology tool configured to measure misregistration at at least one target between two layers of a semiconductor device which is selected from a batch of semiconductor device wafers which are intended to be identical, an electron beam misregistration metrology tool configured to measure misregistration at the at least one target between two layers of a semiconductor device which is selected from the batch and a combiner operative to combine outputs of the optical misregistration metrology tool and the electron beam misregistration metrology tool to provide a combined misregistration metric.
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公开(公告)号：US20200266112A1
公开(公告)日：2020-08-20
申请号：US16477552
申请日：2019-06-04
Applicant: KLA-TENCOR CORPORATION
Inventor： Roie Volkovich , Liran Yerushalmi , Nadav Gutman
Abstract: A misregistration metrology system useful in manufacturing semiconductor device wafers including an optical misregistration metrology tool configured to measure misregistration at at least one target between two layers of a semiconductor device which is selected from a batch of semiconductor device wafers which are intended to be identical, an electron beam misregistration metrology tool configured to measure misregistration at the at least one target between two layers of a semiconductor device which is selected from the batch and a combiner operative to combine outputs of the optical misregistration metrology tool and the electron beam misregistration metrology tool to provide a combined misregistration metric.
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公开(公告)号：US20200033737A1
公开(公告)日：2020-01-30
申请号：US16077214
申请日：2018-07-30
Applicant: KLA-TENCOR CORPORATION
Inventor： Liran Yerushalmi , Roie Volkovich
IPC: G03F7/20 , H01L23/544 , H01L21/68 , G01B11/27
Abstract: Process control methods, metrology targets and production systems are provided for reducing or eliminating process overlay errors. Metrology targets have pair(s) of periodic structures with different segmentations, e.g., no segmentation in one periodic structure and device-like segmentation in the other periodic structure of the pair. Process control methods derive metrology measurements from the periodic structures at the previous layer directly following the production thereof, and prior to production of the periodic structures at the current layer, and use the derived measurements to adjust lithography stage(s) that is part of production of the current layer. Production system integrate lithography tool(s) and metrology tool(s) into a production feedback loop that enables layer-by-layer process adjustments.
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