公开(公告)号：US06984476B2

公开(公告)日：2006-01-10

申请号：US10410394

申请日：2003-04-10

申请人： Kazuki Kobayashi ,  Ikuo Sakono ,  Shinji Shiraki ,  Hirofumi Sasaki ,  Kazuaki Niwa

发明人： Kazuki Kobayashi ,  Ikuo Sakono ,  Shinji Shiraki ,  Hirofumi Sasaki ,  Kazuaki Niwa

IPC分类号： G03F7/023 ,  G03F7/30

CPC分类号： G03F7/0007 ,  G02F1/136227 ,  G03F7/0233 ,  G03F7/0757

摘要： The invention provides a radiation-sensitive resin composition, by which a patterned insulation film whose water repellency varies is easily formed with high precision, a process for forming a patterned insulation film using this composition, a display element and an flat-panel disply device using the composition, and a process for producing the flat-panel disply device.The resin composition comprises (A) an alkali-soluble copolymer, (B) a 1,2-quinonediazide compound and (C) a water-repellent siloxane resin in particular proportions. In the production process of the patterned insulation film, patterning exposure and development are conducted on a coating formed of the resin composition. The display element and flat-panel disply device are equipped with an interlayer insulation film formed by the resin composition. The production process of the flat-panel disply device comprises an interlayer insulation film-forming step including a treatment of patterning exposure exposing conductor layer-forming regions in an exposure that only surface layer portions are cured in one part thereof, and the whole in the thickness-wise direction thereof is cured in the other parts, and a conductor layer-forming step of forming conductor layers on the surface of the interlayer insulation film with a liquid material.

公开(公告)号：US06953600B2

公开(公告)日：2005-10-11

申请号：US10410154

申请日：2003-04-10

申请人： Yasuaki Yokoyama ,  Yasuo Matsuki ,  Ikuo Sakono ,  Kazuki Kobayashi ,  Yasumasa Takeuchi

发明人： Yasuaki Yokoyama ,  Yasuo Matsuki ,  Ikuo Sakono ,  Kazuki Kobayashi ,  Yasumasa Takeuchi

IPC分类号： C23C18/08 ,  C23C18/10 ,  C23C18/14 ,  C23C18/16 ,  H01B5/14 ,  H01B13/00 ,  H01J9/02 ,  H01L21/288 ,  H01L21/768 ,  H01L23/498 ,  H05K3/10 ,  H05K3/24 ,  B05D5/12

CPC分类号： H01L21/76838 ,  C23C18/08 ,  H01L21/288 ,  H01L23/49883 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/105 ,  Y10T428/24917 ,  H01L2924/00

摘要： There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film.A conductive film forming composition comprising a complex of an amine compound and aluminum hydride and an organic solvent is applied on a substrate and then subjected to a heat treatment and/or irradiation with light, whereby a conductive film such as an electrode or wiring is produced.

摘要翻译： 提供能够容易且廉价地形成布线或电极的导电膜形成组合物，其可以适用于各种电子器件，使用该组合物形成膜的方法，通过该方法形成的导电膜，以及 布线或包括该膜的电极。 将包含胺化合物和氢化铝的复合物和有机溶剂的导电膜形成组合物施加在基材上，然后进行热处理和/或光照射，由此产生诸如电极或布线的导电膜 。

公开(公告)号：US06563174B2

公开(公告)日：2003-05-13

申请号：US10224879

申请日：2002-08-21

申请人： Masashi Kawasaki ,  Hideo Ohno ,  Kazuki Kobayashi ,  Ikuo Sakono

发明人： Masashi Kawasaki ,  Hideo Ohno ,  Kazuki Kobayashi ,  Ikuo Sakono

IPC分类号： H01L2701

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603

摘要： In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiNx having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO2). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer. This keeps a crystalline characteristic of the semiconductor layer under a preferable condition in the vicinity of the interface between the second insulating film and the semiconductor layer. As a result, it is possible to realize a thin film transistor such that: a leak current level at an OFF area is low, and the mobility is high, and a switching characteristic is preferable. Thus, in the thin film transistor having a transparent semiconductor film, a TFT characteristic is improved.

摘要翻译： 在薄膜晶体管中，在栅电极上形成具有第一绝缘膜和第二绝缘膜的栅极绝缘膜，并且在第二绝缘膜上形成包括ZnO等的半导体层。 第一绝缘膜通过使用具有高绝缘特性的SiNx形成，并且第二绝缘膜通过使用氧化物（例如，SiO 2）形成。 该结构改善了构成与第二绝缘膜结合的界面的半导体层的结晶特性，并降低了半导体层与第二绝缘膜之间的界面的缺陷水平。 此外，第二绝缘膜由氧化物构成，使得可以抑制第二绝缘膜的材料剥夺半导体层的氧。 这在第二绝缘膜和半导体层之间的界面附近的优选条件下保持半导体层的结晶特性。 结果，可以实现薄膜晶体管，使得在OFF区域的漏电流水平低，并且迁移率高，并且切换特性是优选的。 因此，在具有透明半导体膜的薄膜晶体管中，提高了TFT特性。

公开(公告)号：US06815720B2

公开(公告)日：2004-11-09

申请号：US10227121

申请日：2002-08-23

申请人： Kazuki Kobayashi ,  Kimiaki Fujino ,  Ikuo Sakono ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akihiro Morimoto

发明人： Kazuki Kobayashi ,  Kimiaki Fujino ,  Ikuo Sakono ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akihiro Morimoto

IPC分类号： H01L29786

CPC分类号： G02F1/136286 ,  G02F1/136213 ,  H01L29/41733 ,  H01L29/78633

摘要： A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.

摘要翻译： 制造具有掩埋结构的基板的方法包括以下步骤：制备具有主表面的玻璃基板，通过湿蚀刻工艺在玻璃基板的主表面上形成凹槽，并且在第一材料的主表面上沉积第一材料 玻璃基板并用第一材料填充凹槽，以形成具有与主表面基本齐平的表面的掩埋结构。 形成凹槽的步骤包括通过使用包括氢氟酸，氟化铵和盐酸或草酸的蚀刻剂进行湿蚀刻工艺的步骤。

公开(公告)号：US06992008B2

公开(公告)日：2006-01-31

申请号：US10956886

申请日：2004-10-01

申请人： Kazuki Kobayashi ,  Kimiaki Fujino ,  Ikuo Sakono ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akihiro Morimoto

发明人： Kazuki Kobayashi ,  Kimiaki Fujino ,  Ikuo Sakono ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akihiro Morimoto

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G02F1/136286 ,  G02F1/136213 ,  H01L29/41733 ,  H01L29/78633

摘要： A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.

摘要翻译： 制造具有掩埋结构的基板的方法包括以下步骤：制备具有主表面的玻璃基板，通过湿蚀刻工艺在玻璃基板的主表面上形成凹槽，并且在第一材料的主表面上沉积第一材料 玻璃基板并用第一材料填充凹槽，以形成具有与主表面基本齐平的表面的掩埋结构。 形成凹槽的步骤包括通过使用包括氢氟酸，氟化铵和盐酸或草酸的蚀刻剂进行湿蚀刻工艺的步骤。

公开(公告)号：US20050040526A1

公开(公告)日：2005-02-24

申请号：US10956886

申请日：2004-10-01

申请人： Kazuki Kobayashi ,  Kimiaki Fujino ,  Ikuo Sakono ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akihiro Morimoto

发明人： Kazuki Kobayashi ,  Kimiaki Fujino ,  Ikuo Sakono ,  Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akihiro Morimoto

IPC分类号： G02F1/1333 ,  C03C15/00 ,  G02F1/13 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L29/417 ,  H01L29/786 ,  G02B6/36 ,  H01L21/44 ,  H01L21/4763 ,  H01L23/48 ,  H01L29/40

CPC分类号： G02F1/136286 ,  G02F1/136213 ,  H01L29/41733 ,  H01L29/78633

摘要： A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.

摘要翻译： 制造具有掩埋结构的基板的方法包括以下步骤：制备具有主表面的玻璃基板，通过湿蚀刻工艺在玻璃基板的主表面上形成凹槽，并且在第一材料的主表面上沉积第一材料 玻璃基板并用第一材料填充凹槽，以形成具有与主表面基本齐平的表面的掩埋结构。 形成凹槽的步骤包括通过使用包括氢氟酸，氟化铵和盐酸或草酸的蚀刻剂进行湿蚀刻工艺的步骤。

公开(公告)号：US4997262A

公开(公告)日：1991-03-05

申请号：US515362

申请日：1990-04-30

申请人： Ikuo Sakono ,  Motokazu Inui ,  Hiroaki Kato

发明人： Ikuo Sakono ,  Motokazu Inui ,  Hiroaki Kato

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786

CPC分类号： G02F1/1368 ,  G02F2001/136263

摘要： A liquid crystal display element for matrix display, employing, as address elements, thin film transistors each having a layered arrangement of a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode and a display picture element electrode formed in that order on an insulating substrate. The liquid crystal display element is characterized by a thin metallic film for smoothing path lines for the source electrodes, formed of the same material as that forming the gate electrodes in a plane including the gate electrodes.

公开(公告)号：US5087113A

公开(公告)日：1992-02-11

申请号：US480947

申请日：1990-02-16

申请人： Ikuo Sakono ,  Motokazu Inui ,  Hiroaki Kato

发明人： Ikuo Sakono ,  Motokazu Inui ,  Hiroaki Kato

IPC分类号： H01L27/12 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/136213

摘要： A liquid crystal display device is described which contains picture element electrodes arranged on an insulating substrate and thin film transistors for switching the voltage to be applied to the picture element electrodes. The device is characterized in that additional capacity electrodes are formed from the same material as electrodes of the thin film transistors, between the insulating substrate and the picture element electrodes.

公开(公告)号：US5231039A

公开(公告)日：1993-07-27

申请号：US743029

申请日：1991-08-09

申请人： Ikuo Sakono ,  Motokazu Inui ,  Hiroaki Kato

发明人： Ikuo Sakono ,  Motokazu Inui ,  Hiroaki Kato

IPC分类号： G02F1/1362

CPC分类号： G02F1/136213

摘要： A liquid crystal display device is described which contains picture element electrodes arranged on an insulating substrate and thin film transistors for switching the voltage to be applied to the picture element electrodes. The device is characterized in that additional capacity electrodes are formed from the same material as electrodes of the thin film transistors, between the insulating substrate and the picture element electrodes.

摘要翻译： 描述了一种液晶显示装置，其包含布置在绝缘基板上的像素电极和用于切换施加到像素电极的电压的薄膜晶体管。 该器件的特征在于，在绝缘衬底和像素电极之间，由与薄膜晶体管的电极相同的材料形成附加电容电极。

公开(公告)号：US5028122A

公开(公告)日：1991-07-02

申请号：US340777

申请日：1989-04-20

申请人： Hiroshi Hamada ,  Tadanori Hishida ,  Ikuo Sakono

发明人： Hiroshi Hamada ,  Tadanori Hishida ,  Ikuo Sakono

IPC分类号： H01L27/12 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/136213

摘要： A liquid crystal active-matrix display device is disclosed in which the edge portion of each of the gate electrodes overlaps the edge portion of each of the picture element electrodes to form an additional capacitor. The gate electrodes are made of tantalum, and a first insulating film of tantalum pentoxide and a second insulating film of silicon nitride are disposed in a gap between each of the gate electrodes and each of the picture element electrodes. This thereby provides additional capacitors with a large capacity at a high yield, with little affect on other processes.