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    Semiconductor structure processing using multiple laser beam spots
    1.
    发明授权
    Semiconductor structure processing using multiple laser beam spots 有权
    使用多个激光束点的半导体结构处理

    公开(公告)号：US07923306B2

    公开(公告)日：2011-04-12

    申请号：US11052000

    申请日：2005-02-04

    申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

    发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

    IPC分类号： H01L21/00 ,  B23K26/00

    CPC分类号： H01L23/5258 ,  B23K26/0613 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/10 ,  B23K2101/40 ,  H01L21/76894 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

    摘要翻译： 方法和系统使用多个脉冲激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一脉冲激光束和沿着与半导体衬底相交的第二激光束轴传播的第二脉冲激光束。 该方法将来自第一和第二脉冲激光束的相应的第一和第二脉冲引导到行中不同的第一和第二结构。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向基本上一致地移动。

    Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
    3.
    发明授权
    Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously 有权
    使用同轴间隔的多个激光束点的半导体结构处理

    公开(公告)号：US08148211B2

    公开(公告)日：2012-04-03

    申请号：US11051500

    申请日：2005-02-04

    申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

    发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

    IPC分类号： H01L21/77 ,  B23K26/02 ,  B23K26/06 ,  B23K26/08 ,  B23K26/40

    CPC分类号： B23K26/067 ,  H01L21/76894

    摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.

    摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。 该方法同时将第一和第二激光束引导到行中不同的第一和第二结构。 该方法使第一和第二激光束轴线相对于半导体衬底在基本上平行于该行的长度方向的方向基本上一致地移动，以便用第一和第二激光器中的一个或多个选择性地照射该行中的结构 梁同时进行。

    SYSTEM FOR SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS
    4.
    发明申请
    SYSTEM FOR SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS 审中-公开
    使用多个激光束波束进行半导体结构处理的系统

    公开(公告)号：US20110186555A1

    公开(公告)日：2011-08-04

    申请号：US13085291

    申请日：2011-04-12

    申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

    发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

    IPC分类号： B23K26/06

    CPC分类号： H01L23/5258 ,  B23K26/0613 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/10 ,  B23K2101/40 ,  H01L21/76894 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

    摘要翻译： 方法和系统使用多个脉冲激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一脉冲激光束和沿着与半导体衬底相交的第二激光束轴传播的第二脉冲激光束。 该方法将来自第一和第二脉冲激光束的相应的第一和第二脉冲引导到行中不同的第一和第二结构。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向基本上一致地移动。

    Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
    5.
    发明授权
    Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset 有权
    半导体结构的处理使用多个激光束点间隔轴上与横轴偏移

    公开(公告)号：US07425471B2

    公开(公告)日：2008-09-16

    申请号：US11051958

    申请日：2005-02-04

    申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

    发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen ,  Frank G. Evans

    IPC分类号： H01L21/82

    CPC分类号： H01L23/5258 ,  B23K26/0613 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/10 ,  B23K2101/40 ,  H01L21/76894 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

    摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。 该方法将第一和第二激光束引导到行中不同的第一和第二结构。 第二点在与行长度方向垂直的方向上偏离第一点一定量。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。

    Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
    8.
    发明授权
    Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset 有权
    使用具有轴上偏移的多个横向间隔开的激光束点的半导体连接处理

    公开(公告)号：US07435927B2

    公开(公告)日：2008-10-14

    申请号：US11051265

    申请日：2005-02-04

    申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen

    发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Stephen N. Swaringen

    IPC分类号： B23K26/38 ,  B23K26/067

    CPC分类号： H01L23/5258 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/082 ,  G11C17/14 ,  G11C17/143 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Multiple laser beams selectively irradiate electrically conductive structures on or within a semiconductor substrate. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates first and second laser beams along respective first and second propagation paths having respective first and second axes incident at respective first and second locations on or within the semiconductor substrate at a given time. The first and second locations are either on a structure in their respective rows or between two adjacent structures in their respective rows, which are distinct. The second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the rows with the laser beams.

    摘要翻译： 多个激光束选择性地照射半导体衬底上或内部的导电结构。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 一种方法沿着相应的第一和第二传播路径传播第一和第二传播路径，其中在相应的给定时间，半导体衬底上或第二位置处的相应的第一和第二轴入射到相应的第一和第二位置处。 第一和第二位置在它们各自的行中的结构上或它们各自的行中的两个相邻结构之间，这是不同的。 第二位置在行的长度方向上偏离第一位置一定量。 该方法使激光束轴相对于半导体衬底在行的长度方向上基本一致地移动，以便用激光束选择性地照射行中的结构。

    Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
    10.
    发明授权
    Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures 有权
    使用在非相邻结构上在轴上间隔开的多个激光束点的半导体结构处理

    公开(公告)号：US07935941B2

    公开(公告)日：2011-05-03

    申请号：US11051263

    申请日：2005-02-04

    申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Frank G. Evans

    发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Frank G. Evans

    IPC分类号： B23K26/08 ,  B23K26/38

    CPC分类号： B23K26/067

    摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

    摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。 该方法将第一和第二激光束引导到行中不相邻的第一和第二结构。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。