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公开(公告)号：US20240254625A1
公开(公告)日：2024-08-01
申请号：US18598293
申请日：2024-03-07
发明人： Kimihiko NAKATANI , Ryuji YAMAMOTO
IPC分类号： C23C16/455 , C23C16/52 , H01L21/02
CPC分类号： C23C16/45534 , C23C16/52 , H01L21/02123 , H01L21/0228
摘要： There is provided a technique including forming an inhibitor layer on a first surface of a substrate having the first surface and a second surface by supplying a modifying agent to the substrate to adsorb inhibitor molecules contained in the modifying agent on the first surface, and forming a film on the second surface by supplying a film-forming agent containing a catalyst to the substrate after forming the inhibitor layer on the first surface. A width of each of the inhibitor molecules is a, an interval between adsorption sites on the first surface is b, and a width of a catalyst molecule constituting the catalyst is c, where c>b−a is satisfied when a is smaller than b, and c>xb−a (x is the smallest integer that satisfies a
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公开(公告)号：US20240287671A1
公开(公告)日：2024-08-29
申请号：US18655990
申请日：2024-05-06
发明人： Ryuji YAMAMOTO , Yoshiro HIROSE
IPC分类号： C23C16/02 , C23C16/24 , C23C16/455 , H01L21/02
CPC分类号： C23C16/02 , C23C16/24 , C23C16/45542 , C23C16/45546 , C23C16/45557 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262
摘要： A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.
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公开(公告)号：US20230175116A1
公开(公告)日：2023-06-08
申请号：US18076091
申请日：2022-12-06
发明人： Kimihiko NAKATANI , Ryuji YAMAMOTO
IPC分类号： C23C16/04 , C23C16/513 , C23C16/52 , C23C16/56
CPC分类号： C23C16/042 , C23C16/513 , C23C16/52 , C23C16/56
摘要： There is provided a technique that includes: (A) supplying a modifying agent to a substrate including a first surface and a second surface to form an inhibitor layer on the first surface; and (B) supplying a film-forming agent to the substrate after forming the inhibitor layer on the first surface to form a film on the second surface, wherein a width of an inhibitor molecule constituting the inhibitor layer is defined as WI, a spacing of adsorption sites on the first surface is defined as DA, a width of a molecule X constituting a predetermined substance contained in the film-forming agent is defined as WP, wherein WP>DA−WI is satisfied when WI is smaller than DA, and wherein WP>DAx−WI is satisfied when WI is larger than DA, where x is a smallest integer that satisfies WI
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公开(公告)号：US20220262632A1
公开(公告)日：2022-08-18
申请号：US17484379
申请日：2021-09-24
发明人： Takashi YAHATA , Naofumi OHASHI , Ryuji YAMAMOTO
摘要： There is provided a technique that includes: (a) loading a substrate into a process container; (b) heating the substrate by supplying a first gas, which is heated when passing through a first heater installed at a first gas supply line, to the substrate via a gas supplier; (c) supplying a second gas, which flows through a second gas supply line different from the first gas supply line, to the substrate mounted on a substrate mounting table in the process container, via the gas supplier; and (d) lowering a temperature of the gas supplier by supplying a third gas, which has a temperature lower than that of the first gas, to the gas supplier between (b) and (c).
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公开(公告)号：US20210198785A1
公开(公告)日：2021-07-01
申请号：US17204493
申请日：2021-03-17
发明人： Ryuji YAMAMOTO , Yoshiro HIROSE
IPC分类号： C23C16/02 , H01L21/02 , C23C16/455 , C23C16/24
摘要： A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.
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公开(公告)号：US20230183864A1
公开(公告)日：2023-06-15
申请号：US18167153
申请日：2023-02-10
IPC分类号： C23C16/455 , C23C16/34 , C23C16/40
CPC分类号： C23C16/45544 , C23C16/45553 , C23C16/345 , C23C16/401
摘要： There is provided a technique that includes: supplying a film formation inhibition gas to the substrate, which includes a first base and a second base on a surface of the substrate, to form a film formation inhibition layer on a surface of the first base; supplying a film-forming gas to the substrate after forming the film formation inhibition layer on the surface of the first base, to form a film on a surface of the second base; and supplying a halogen-free substance, which chemically reacts with the film formation inhibition layer and the film, to the substrate after forming the film on the surface of the second base, in a non-plasma atmosphere.
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