公开(公告)号：US09064778B2

公开(公告)日：2015-06-23

申请号：US14259674

申请日：2014-04-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jung Ah Lim ,  Yong-Won Song ,  Jae-Min Hong ,  Won-Kook Choi ,  Dae Seong Eom

IPC: H01L29/49 ,  H01L29/16 ,  H01L29/66 ,  H01L21/02 ,  H01L29/45 ,  H01L29/43

CPC classification number: H01L29/1606 ,  C01B32/184 ,  C01B32/23 ,  H01L21/02527 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/0692 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684

Abstract: A method of manufacturing a thin-film transistor is provided, including preparing ink including a solution in which a graphene oxide, a reduced graphene oxide, or a combination thereof is dispersed, forming the ink on a substrate in the form of a pattern, and forming a source electrode and a drain electrode that are positioned at edges of the pattern and a semiconductor channel positioned between the electrodes by a coffee-ring effect in the ink by using the graphene oxide, the reduced graphene oxide, or the combination thereof within the formed pattern.

Abstract translation: 提供一种制造薄膜晶体管的方法，包括制备包括其中分散有氧化石墨烯，氧化还原石墨烯或其组合的溶液的油墨，以图案的形式在基材上形成油墨，以及 通过使用氧化石墨烯，还原型氧化石墨烯或它们的组合，在油墨中形成定位在图案边缘处的源电极和漏电极以及通过咖啡环效应位于电极之间的半导体通道 形成图案。

公开(公告)号：US09704610B2

公开(公告)日：2017-07-11

申请号：US15014937

申请日：2016-02-03

Applicant: Korea Institute of Science and Technology

Inventor： Ji-Won Choi ,  Won-Kook Choi ,  Jin Sang Kim ,  Haena Yim

IPC: B32B15/04 ,  C23C14/06 ,  H01B1/02 ,  H01L29/43 ,  H01L31/0224 ,  C01G19/02 ,  H01L31/18 ,  H01L33/42

CPC classification number: H01B1/02 ,  C01G19/02 ,  C01P2002/50 ,  C01P2002/54 ,  H01L29/43 ,  H01L31/022466 ,  H01L31/1884 ,  H01L33/42 ,  Y02E10/50

Abstract: Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0

公开(公告)号：US09236493B2

公开(公告)日：2016-01-12

申请号：US13659226

申请日：2012-10-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young-Jei Oh ,  Chil-Hyoung Lee ,  Won-Kook Choi ,  Jeon-Kook Lee ,  Young-Soo No

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2  [Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (μ) and rectification ratio as well as transparency.

Abstract translation: p型透明氧化物半导体包括以下化学式1所示的氧化锡化合物：Sn1-xMxO2 [化学式1]其中，在化学式1中，M为三价金属，X为0.01的实数 ~0.05。 由于优异的电气和光学性质，p型透明氧化物半导体可应用于诸如TFT-LCD和透明太阳能电池的有源半导体器件，并且在可见光透射率（T），载流子迁移率（μ）和 整改率以及透明度。

公开(公告)号：US20140264269A1

公开(公告)日：2014-09-18

申请号：US14355399

申请日：2012-10-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won-Kook Choi ,  Dong Ick Son ,  Byoung Wook Kwon ,  Dong Hee Park

IPC: H01L33/06 ,  H01L33/26 ,  H01L33/00

CPC classification number: H01L33/06 ,  C09K11/54 ,  H01L33/005 ,  H01L33/26 ,  H01L51/0003 ,  H01L51/0045 ,  H01L51/502 ,  H05B33/10 ,  H05B33/14

Abstract: Disclosed is a method of preparing metal oxide semiconductor-graphene core-shell quantum dots by chemically linking graphenes with superior electrical properties to a metal oxide semiconductor, and a method of fabricating a light emitting diode by using the same. The light emitting diode according to the present invention has the advantages that it shows excellent power conversion efficiency, the cost for materials and equipments required for its fabrication can be reduced, its fabricating process is simple, and it is possible to mass-produce and enlarge the size of display based on a quantum dot light emitting diode. Further, the present invention relates to core-shell quantum dots that can be used in fabricating a light emitting diode with a different wavelength by using various multi-component metal oxide semiconductors and a fabricating method thereof.

Abstract translation: 公开了通过化学连接具有优异电性能的金属氧化物半导体的金属氧化物半导体 - 石墨烯核 - 壳量子点的方法，以及通过使用该方法制造发光二极管的方法。 根据本发明的发光二极管具有优异的功率转换效率，可以降低其制造所需的材料和设备的成本，其制造工艺简单，并且可以批量生产和扩大 基于量子点发光二极管的显示器的尺寸。 此外，本发明涉及可以通过使用各种多组分金属氧化物半导体制造具有不同波长的发光二极管的核 - 壳量子点及其制造方法。