公开(公告)号：US07750232B2

公开(公告)日：2010-07-06

申请号：US11176389

申请日：2005-07-08

申请人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

发明人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

IPC分类号： H01L25/00

CPC分类号： H01L31/0312 ,  H01L31/03687 ,  H01L31/1812 ,  Y02E10/548

摘要： A multi-crystalline silicon germanium bulk crystal with microscopic compositional distribution is adapted for use in solar cells to substantially increase conversion efficiency. By controlling the average Ge concentration between 0.1 and 8.0 mole percent, significant improvements are attained with respect to short circuit current density and conversion efficiency.

摘要翻译： 具有微观组成​​分布的多晶硅锗体晶适用于太阳能电池，以显着提高转换效率。 通过控制平均Ge浓度在0.1和8.0摩尔％之间，在短路电流密度和转换效率方面可以获得显着的改进。

公开(公告)号：US08406379B2

公开(公告)日：2013-03-26

申请号：US12733361

申请日：2008-08-28

申请人： Hiroshi Okuda ,  Kazuo Nakajima ,  Kozo Fujiwara

发明人： Hiroshi Okuda ,  Kazuo Nakajima ,  Kozo Fujiwara

IPC分类号： G21K1/06 ,  G01N23/20

CPC分类号： G21K1/06 ,  C30B29/06 ,  C30B29/08 ,  C30B29/607 ,  C30B33/02 ,  G21K2201/062 ,  G21K2201/064 ,  G21K2201/067

摘要： In one embodiment of the present invention, a curvature distribution crystal lens of the present invention is obtained via press-molding. In the case of a Ge single crystal plate, a temperature for the press-molding is in a range 1° C. to 120° C. lower than a melting point. In the case of a Si single crystal plate, a temperature for the press-molding is in a range 1° C. to 200° C. lower than a melting point. The curvature distribution crystal lens has a crystal lattice plane forming a 1D cylindrically curved surface or a 1D logarithmically curved surface whose valley is in a direction perpendicular to a direction having a maximum curvature, the direction having the maximum curvature being within 30° from a [001] or [1-10] direction in a (110) plane. As a result, it is possible to make an integrated reflection intensity uniform and to make a half-value width uniform in a wide range. Consequently, it is possible to achieve a curvature distribution crystal lens having a wide incident angle range and a high light focusing accuracy.

摘要翻译： 在本发明的一个实施例中，本发明的曲率分布晶体透镜是通过压制成型获得的。 在Ge单晶板的情况下，加压成型的温度比熔点低1℃〜120℃。 在Si单晶板的情况下，加压成型的温度在比熔点低1℃〜200℃的范围内。 曲率分布晶体透镜具有形成1D圆柱形曲面的晶格面或1D对数曲面，其谷在与具有最大曲率的方向垂直的方向上，具有最大曲率的方向与[ 001]或[1-10]方向。 结果，可以使整体反射强度均匀，并使宽度范围内的半值宽度均匀。 因此，可以实现具有宽入射角范围和高聚焦精度的曲率分布晶体透镜。

公开(公告)号：US20090000536A1

公开(公告)日：2009-01-01

申请号：US12130863

申请日：2008-05-30

申请人： Kozo Fujiwara ,  Kazuo Nakajima

发明人： Kozo Fujiwara ,  Kazuo Nakajima

IPC分类号： C30B9/04

CPC分类号： C30B29/06 ,  C30B11/003 ,  C30B29/08 ,  C30B29/52

摘要： A high-quality polycrystalline bulk semiconductor having a large crystal grain size is produced by the casting method in which growth is regulated so as to proceed in the same plane direction, i.e., the {110}; plane or {112} plane is disclosed. The process, which is for producing a polycrystalline bulk semiconductor, comprises: a step in which a melt of a semiconductor selected among Si, Ge, and SiGe is held in a crucible; a step in which a bottom part of the crucible is cooled to give a temperature gradient and that part of the melt which is located directly on the crucible bottom is rapidly cooled in the beginning of growth to supercool the melt around the crucible bottom; a step in which the crucible is cooled to grow nuclei on the crucible bottom due to the supercooled state of the melt around the crucible bottom and thereby grow dendritic crystals along the crucible bottom; and a step in which a polycrystalline bulk of the semiconductor is then grown on the upper side of the dendritic crystals.

摘要翻译： 具有大晶粒尺寸的高质量多晶体半导体是通过在同一平面方向（即{110}）上进行调节而进行生长的铸造方法制造的。 平面或{112}平面。 用于制造多晶体半导体的方法包括：将从Si，Ge和SiGe中选择的半导体的熔体保持在坩埚中的步骤; 坩埚的底部被冷却以产生温度梯度并且直接位于坩埚底部上的部分熔体在生长开始时被快速冷却，以使熔化物在坩埚底部过冷; 由于坩埚底部的熔体的过冷状态，坩埚被冷却以在坩埚底部生长核的步骤，从而沿着坩埚底部生长树枝晶体; 并且在树枝状晶体的上侧生长半导体的多晶体的步骤。

公开(公告)号：US20100208868A1

公开(公告)日：2010-08-19

申请号：US12733361

申请日：2008-08-28

申请人： Hiroshi Okuda ,  Kazuo Nakajima ,  Kozo Fujiwara

发明人： Hiroshi Okuda ,  Kazuo Nakajima ,  Kozo Fujiwara

IPC分类号： G01N23/20 ,  G02B3/02

CPC分类号： G21K1/06 ,  C30B29/06 ,  C30B29/08 ,  C30B29/607 ,  C30B33/02 ,  G21K2201/062 ,  G21K2201/064 ,  G21K2201/067

摘要： In one embodiment of the present invention, a curvature distribution crystal lens of the present invention is obtained via press-molding. In the case of a Ge single crystal plate, a temperature for the press-molding is in a range 1° C. to 120° C. lower than a melting point. In the case of a Si single crystal plate, a temperature for the press-molding is in a range 1° C. to 200° C. lower than a melting point. The curvature distribution crystal lens has a crystal lattice plane forming a 1D cylindrically curved surface or a 1D logarithmically curved surface whose valley is in a direction perpendicular to a direction having a maximum curvature, the direction having the maximum curvature being within 30° from a [001] or [1-10] direction in a (110) plane. As a result, it is possible to make an integrated reflection intensity uniform and to make a half-value width uniform in a wide range. Consequently, it is possible to achieve a curvature distribution crystal lens having a wide incident angle range and a high light focusing accuracy.

摘要翻译： 在本发明的一个实施例中，本发明的曲率分布晶体透镜是通过压制成型获得的。 在Ge单晶板的情况下，加压成型的温度比熔点低1℃〜120℃。 在Si单晶板的情况下，加压成型的温度在比熔点低1℃〜200℃的范围内。 曲率分布晶体透镜具有形成1D圆柱形曲面的晶格面或1D对数曲面，其谷在与具有最大曲率的方向垂直的方向上，具有最大曲率的方向与[ 001]或[1-10]方向。 结果，可以使整体反射强度均匀，并使宽度范围内的半值宽度均匀。 因此，可以实现具有宽入射角范围和高聚焦精度的曲率分布晶体透镜。

公开(公告)号：US20070089781A1

公开(公告)日：2007-04-26

申请号：US11583872

申请日：2006-10-20

申请人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

发明人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

IPC分类号： H01L31/00

CPC分类号： H01L31/0312 ,  H01L31/077 ,  Y02E10/50

摘要： In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.1 mole % and less than 1.0 mole %. Desirably the germanium content is set in the range of not less than 0.1 mole % to not more than 0.6 mole %, and the germanium content is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 Ωcm. Therefore, conversion efficiency can largely be enhanced compared with the case where the conventional single-crystal silicon substrate is used. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.

摘要翻译： 在通过本发明的单晶硅以切克劳斯基法生长单晶硅之后，在将熔融硅表面与坩埚中的晶种接触之后，将硅熔体加入锗，将单晶硅拉出 同时旋转，并且从含单晶硅的锗切片太阳能电池单晶硅衬底，由此将太阳能电池单晶硅衬底的锗含量设定在不小于0.1摩尔％的范围内，以及 小于1.0摩尔％。 理想地，锗含量设定在不小于0.1摩尔％至不大于0.6摩尔％的范围内，并且当电阻率范围为从不低于0.03摩尔％至小于1.0摩尔％时，锗含量设定在 1.4至1.9欧姆 因此，与使用传统的单晶硅衬底的情况相比，转换效率可以大大提高。 因此，太阳能电池发电成本降低，使得本发明的单晶硅可以广泛地用作其中越来越需要高转换效率的太阳能电池的基板。

公开(公告)号：US20070006915A1

公开(公告)日：2007-01-11

申请号：US11176389

申请日：2005-07-08

申请人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

发明人： Kazuo Nakajima ,  Wugen Pan ,  Kozo Fujiwara ,  Noritaka Usami

IPC分类号： H01L31/00

CPC分类号： H01L31/0312 ,  H01L31/03687 ,  H01L31/1812 ,  Y02E10/548

摘要： A multi-crystalline silicon germanium bulk crystal with microscopic compositional distribution is adapted for use in solar cells to substantially increase conversion efficiency. By controlling the average Ge concentration between 0.1 and 8.0 mole percent, significant improvements are attained with respect to short circuit current density and conversion efficiency.

摘要翻译： 具有微观组成​​分布的多晶硅锗体晶适用于太阳能电池，以显着提高转换效率。 通过控制平均Ge浓度在0.1和8.0摩尔％之间，在短路电流密度和转换效率方面可以获得显着的改进。

公开(公告)号：US08404043B2

公开(公告)日：2013-03-26

申请号：US12130863

申请日：2008-05-30

申请人： Kozo Fujiwara ,  Kazuo Nakajima

发明人： Kozo Fujiwara ,  Kazuo Nakajima

IPC分类号： C30B11/00

CPC分类号： C30B29/06 ,  C30B11/003 ,  C30B29/08 ,  C30B29/52

摘要： A high-quality polycrystalline bulk semiconductor having a large crystal grain size is produced by the casting method in which growth is regulated so as to proceed in the same plane direction, i.e., the {110}; plane or {112} plane is disclosed. The process, which is for producing a polycrystalline bulk semiconductor, comprises: a step in which a melt of a semiconductor selected among Si, Ge, and SiGe is held in a crucible; a step in which a bottom part of the crucible is cooled to give a temperature gradient and that part of the melt which is located directly on the crucible bottom is rapidly cooled in the beginning of growth to supercool the melt around the crucible bottom; a step in which the crucible is cooled to grow nuclei on the crucible bottom due to the supercooled state of the melt around the crucible bottom and thereby grow dendritic crystals along the crucible bottom; and a step in which a polycrystalline bulk of the semiconductor is then grown on the upper side of the dendritic crystals.

摘要翻译： 具有大晶粒尺寸的高质量多晶体半导体是通过在同一平面方向（即{110}）上进行调节而进行生长的铸造方法制造的。 平面或{112}平面。 用于制造多晶体半导体的方法包括：将从Si，Ge和SiGe中选择的半导体的熔体保持在坩埚中的步骤; 坩埚的底部被冷却以产生温度梯度并且直接位于坩埚底部上的部分熔体在生长开始时被快速冷却，以使熔化物在坩埚底部过冷; 由于坩埚底部的熔体的过冷状态，坩埚被冷却以在坩埚底部生长核的步骤，从而沿着坩埚底部生长树枝晶体; 并且在树枝状晶体的上侧生长半导体的多晶体的步骤。

公开(公告)号：US08017862B2

公开(公告)日：2011-09-13

申请号：US11583872

申请日：2006-10-20

申请人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

发明人： Michio Kida ,  Wugen Pan ,  Kyojiro Kaneko ,  Kazuo Nakajima ,  Noritaka Usami ,  Kozo Fujiwara

IPC分类号： H01L25/00 ,  H01L31/00 ,  H02N6/00

CPC分类号： H01L31/0312 ,  H01L31/077 ,  Y02E10/50

摘要： In growing a single-crystal silicon by the present invention in a Czochralski method, after a surface of a silicon melt is brought into contact with a seed crystal in a crucible, the silicon melt being added with germanium, the single-crystal silicon is pulled while rotated, and the solar-cell single-crystal silicon substrate is sliced from the single-crystal silicon containing germanium, whereby a germanium content of solar-cell single-crystal silicon substrate is set in the range of not less than 0.03 mole % to less than 1.0 mole % when resistivity ranges from 1.4 to 1.9 Ωcm. Therefore, conversion efficiency is enhanced when compared with conventional single-crystal silicon substrates. Accordingly, solar cell power generation costs decreases, so that the single-crystal silicon of the present invention can widely be utilized as the substrate for the solar cell in which the high conversion efficiency is increasingly demanded.

摘要翻译： 在通过本发明的单晶硅以切克劳斯基法生长单晶硅之后，在将熔融硅表面与坩埚中的晶种接触之后，将硅熔体加入锗，将单晶硅拉出 同时旋转，并且从含单晶硅的锗切片太阳能电池单晶硅基板，由此将太阳能电池单晶硅基板的锗含量设定在不小于0.03摩尔％的范围内，相对于 当电阻率范围为1.4至1.9（OHgr·cm）时小于1.0摩尔％。 因此，与传统的单晶硅衬底相比，转换效率提高。 因此，太阳能电池发电成本降低，使得本发明的单晶硅可以广泛地用作其中越来越需要高转换效率的太阳能电池的基板。

公开(公告)号：US20050034756A1

公开(公告)日：2005-02-17

申请号：US10860060

申请日：2004-06-04

申请人： Kazuo Nakajima ,  Noritaka Usami ,  Toru Ujihara ,  Kozo Fujiwara

发明人： Kazuo Nakajima ,  Noritaka Usami ,  Toru Ujihara ,  Kozo Fujiwara

IPC分类号： C30B19/00 ,  C30B19/10 ,  C30B19/12 ,  C30B29/06 ,  H01L21/208 ,  H01L31/04 ,  H01L31/18 ,  H01L31/00

CPC分类号： H01L31/1804 ,  C30B19/00 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02625 ,  Y02E10/547 ,  Y02P70/521

摘要： A Si melt is contacted to a main surface of a Si substrate made of metallurgical Si raw material to conduct liquid phase epitaxy within a temperature range around Si melting point and to form a Si crystal thin film on the main surface of the Si substrate.

摘要翻译： Si熔融物与由冶金Si原料制成的Si衬底的主表面接触，以在Si熔点附近的温度范围内进行液相外延生长，并在Si衬底的主表面上形成Si晶体薄膜。

公开(公告)号：US4848127A

公开(公告)日：1989-07-18

申请号：US113531

申请日：1987-10-27

申请人： Kunio Isobe ,  Takaaki Hira ,  Takayuki Naoi ,  Hideyuki Nikaido ,  Kozo Fujiwara ,  Shigeru Ueki ,  Kouzou Ishikawa ,  Toshihiro Hanada

发明人： Kunio Isobe ,  Takaaki Hira ,  Takayuki Naoi ,  Hideyuki Nikaido ,  Kozo Fujiwara ,  Shigeru Ueki ,  Kouzou Ishikawa ,  Toshihiro Hanada

IPC分类号： B21B1/02 ,  B21J5/00

CPC分类号： B21B1/024 ,  B21J5/00 ,  B21B2001/028

摘要： A slab is successively fed between periodically moving press tools to reduce the slab in a widthwise direction. In this method, the leading and tail end portions of a given length in the slab are reduced at a reduced width wider than that of remaining steady portion.

摘要翻译： 在周期性移动的压力工具之间连续地供给板坯以沿宽度方向减小板坯。 在该方法中，板坯中给定长度的前端部分和尾端部分以比剩余稳定部分宽的减小的宽度减小。