Abstract:
A method for producing a colored or fluorescent substrate with a view to formation of a colored or fluorescent image including the formation. The method defines on a substrate of a colored or fluorescent matrix, pixels of at least two different colors, wherein each pixel forms a filter for a given color. At least one filter is an interferential filter or a filter obtained with colored or fluorescent particles.
Abstract:
An optical filter for filtering an electromagnetic radiation of variable angle of incidence, includes a stack of at least one dielectric or semi-conductor layer arranged between two partially reflective layers, said stack defining a set of Fabry-Pérot cavities set to a predetermined wavelength. The average refractive index of the dielectric or semi-conductor layer is variable in a plane orthogonal to the direction of the stack so as to compensate the effects of the variation in the angle of incidence of the electromagnetic radiation on the transmission spectrum of the cavities.
Abstract:
The invention relates to a photodetector intended for the detection of incident light radiation in the visible and close infrared region, said photodetector comprising: a light-radiation-absorption structure (10) comprising a semiconductor material of index n1 and including a surface (13) exposed to the incident light radiation, and electrical connection means in contact with the aforementioned structure in order to convey a detection signal produced by the structure in response to the light radiation. The invention is characterised in that light-radiation-focusing means (12) are provided on the exposed surface (13), said means being formed by a single nanostructure having dimensions smaller than the wavelength of the light radiation in all directions of space.
Abstract:
Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), each of the n metal layers (m1, m2, m3) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2.Application to 3D mapping and imaging.
Abstract:
An ultra-sensitive optical detector with large time resolution, using a surface plasmon. The optical detector is configured to detect at least one photon, and including a dielectric substrate, and on the substrate, at least one bolometric detection component, that generates an electrical signal from the energy of received photon(s). Additionally, at least one coupling component is formed on the substrate, distinct from the detection component and including a metal component, and generates a surface plasmon by interaction with the photon(s) and guiding the plasmon right up to the detection component, which then absorbs the energy of the surface plasmon.
Abstract:
This detector is intended to detect at least one photon and comprises a dielectric substrate (30), of index nO; a detecting element (32) forming a serpentine, placed on the substrate and generating a signal using the energy of the photon(s); a dielectric grating, formed of lines of index nH, alternating with lines of index nB, avec nH>nO and nH>nB, the grating being placed above the detecting element, the set grating-element presenting a resonant absorption in a given incidence and for a given polarisation; and a superstratum (40) having a refractive index ni, this superstratum being placed above the one-dimensional dielectric grating, nH being furthermore greater than ni.
Abstract:
Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), each of the n metal layers (m1, m2, m3) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2.Application to 3D mapping and imaging.
Abstract:
A method for producing a colored or fluorescent substrate with a view to formation of a colored or fluorescent image including the formation. The method defines on a substrate of a colored or fluorescent matrix, pixels of at least two different colors, wherein each pixel forms a filter for a given color. At least one filter is an interferential filter or a filter obtained with colored or fluorescent particles.
Abstract:
An optical filter for filtering an electromagnetic radiation of variable angle of incidence, includes a stack of at least one dielectric or semi-conductor layer arranged between two partially reflective layers, said stack defining a set of Fabry-Pérot cavities set to a predetermined wavelength. The average refractive index of the dielectric or semi-conductor layer is variable in a plane orthogonal to the direction of the stack so as to compensate the effects of the variation in the angle of incidence of the electromagnetic radiation on the transmission spectrum of the cavities.
Abstract:
An ultrasensitive optical detector with high resolution in time, using a waveguide, and a processes for manufacturing this detector. The detector is configured to detect at least one photon and includes a dielectric substrate and at least one detection element on the substrate, configured to generate an electrical signal starting from energy of the photon received, and a guide element to guide the photon, the energy of which is then absorbed by the detection element at an absorption zone which is less than 100 nm thick. The detection element is substantially straight on the substrate and is short, and the guide element includes a single mode light waveguide with strong confinement, placed on the detection element. The detector is particularly applicable to detection and localization of operating defects in a semiconducting circuit.