公开(公告)号：US20120085944A1

公开(公告)日：2012-04-12

申请号：US13231272

申请日：2011-09-13

Applicant: Pierre Gidon ,  Gilles Grand ,  Laurent Frey ,  Pascale Parrein

Inventor： Pierre Gidon ,  Gilles Grand ,  Laurent Frey ,  Pascale Parrein

IPC: H01L31/14 ,  G02B5/22

CPC classification number: G02B5/201 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14627 ,  H01L31/02162

Abstract: Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), each of the n metal layers (m1, m2, m3) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2.Application to 3D mapping and imaging.

Abstract translation: 滤波矩阵结构包括至少三个滤色器和多个近红外滤光器，每个滤色器和近红外滤光器具有最佳透射频率，其中滤光矩阵结构由n个金属层（m1，m2， m3）和在第一金属层（m1）和第n基本透明层（d3）之间交替的n个基本上透明的层（d1，d2，d3），n个金属层（m1，m2，m3）中的每一个具有常数 厚度和至少一个具有可变厚度的基本上透明的层，其设置每个滤色器和每个近红外滤光器的最佳透射频率，n是大于或等于2的整数。应用于3D映射和成像。

公开(公告)号：US20100059803A1

公开(公告)日：2010-03-11

申请号：US12551715

申请日：2009-09-01

Applicant: Pierre Gidon ,  Yvon Cazaux

Inventor： Pierre Gidon ,  Yvon Cazaux

IPC: H01L31/02 ,  H01L31/18

CPC classification number: H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

Abstract: An image sensor comprising at least: CMOS-type photodiodes and transistors produced in a semiconductor layer having a thickness of between approximately 1 μm and 1.5 μm, a dielectric layer in which electrical interconnect layers are made, which are electrically connected to one another and/or to the CMOS photodiodes and/or transistors, said dielectric layer being arranged against a first face of the semiconductor layer opposite a second face of the semiconductor layer through which the light received by the sensor from the exterior is intended to enter, light-reflecting means arranged in the dielectric layer, opposite the photodiodes, and capable of reflecting at least a portion of the light received by the sensor towards the photodiodes.

Abstract translation: 一种图像传感器，至少包括：CMOS型光电二极管和在厚度为约1μm至1.5μm之间的半导体层中制造的晶体管，形成电互连层的电介质层，其彼此电连接和/ 或所述CMOS光电二极管和/或晶体管，所述电介质层被布置成抵靠所述半导体层的与所述半导体层的第二面相反的第一面，所述传感器从外部接收的光将通过所述第二面进入，反射 布置在电介质层中的与光电二极管相对的装置，并且能够将由传感器接收的光的至少一部分反射到光电二极管。

公开(公告)号：US5239601A

公开(公告)日：1993-08-24

申请号：US768183

申请日：1991-10-16

Applicant: Herve Denis ,  Pierre Gidon ,  Serge Valette

Inventor： Herve Denis ,  Pierre Gidon ,  Serge Valette

IPC: G02B6/30 ,  G02B6/36

CPC classification number: G02B6/3692 ,  G02B6/30 ,  G02B6/3636 ,  G02B6/364 ,  G02B6/3652

Abstract: A connection process between an optical fiber and an optical microguide, the microguide having on a substrate, a structure having two media and a core between the media and whose refractive index is higher than those of the media, wherein substantially anisotropic etching takes place of the structure from one end of the microguide, so as to eliminate from the structure a zone allowing the axis of the core as the median line and whose width is at least equal to the external diameter of the fiber. Etching by a dry process takes place of part of the substrate which is located beneath the thus eliminated zone and over a depth making it possible to bring into coincidence the core of the microguide and the core of the fiber, when the latter rests on the bottom of the recess formed in this manner in the substrate and the fiber is fixed in said recess.

Abstract translation: PCT No.PCT / FR91 / 00167 Sec。 371日期1991年10月16日 102（e）日期1991年10月16日PCT 1991年3月1日PCT公布。 出版物WO91 / 13378 日期：1991年9月5日。光纤与光学微导体之间的连接工艺，微基板在基板上，具有两个介质的结构和介质之间的芯，其折射率高于介质的折射率，其中 基本上各向异性蚀刻发生在微导管的一端的结构，从而从结构中消除允许芯的轴线作为中线并且其宽度至少等于纤维的外径的区域。 通过干法进行的蚀刻发生在位于如此消除的区域下方的衬底的一部分上并且在深度上，使得可以使微导体的芯与纤维的芯部重合，当后者搁在底部 以这种方式形成在该衬底中的凹槽，并且光纤固定在所述凹部中。

公开(公告)号：US5210801A

公开(公告)日：1993-05-11

申请号：US673386

申请日：1991-03-22

Applicant: Adeline Fournier ,  Pierre Gidon ,  Serge Valette

Inventor： Adeline Fournier ,  Pierre Gidon ,  Serge Valette

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/124 ,  G02B6/13 ,  H01L27/15

CPC classification number: G02B6/124 ,  Y10S385/901

Abstract: An environmentally protected integrated optical component and its production process is disclosed. The component has at least one cavity (26a) isolated from the environment formed in at least one light guide layer (16, 18), with the cavity being filled with a fluid or a polymer (27) having a refractive index which is different or which can be made different from the refractive index of the layer. In particular, the cavity is filled with air. The component can be a splitting plate, a mirror, a grating, a microguide or a lens.

Abstract translation: 公开了一种环境保护的集成光学部件及其制造方法。 所述部件具有与在至少一个光导层（16,18）中形成的环境隔离的至少一个空腔（26a），其中空腔填充有折射率不同的流体或聚合物（27），或 其可以与层的折射率不同。 特别地，空腔充满空气。 该组件可以是分离板，反射镜，光栅，微导体或透镜。

公开(公告)号：US08835924B2

公开(公告)日：2014-09-16

申请号：US13381435

申请日：2010-07-05

Applicant: Pierre Gidon ,  Benoit Giffard ,  Norbert Moussy

Inventor： Pierre Gidon ,  Benoit Giffard ,  Norbert Moussy

IPC: H01L29/04 ,  H01L27/146 ,  H01L31/0224

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/022408

Abstract: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.

Abstract translation: 一种光检测装置，包括多个像素，每个像素包括至少一个交替的光电二极管和导电电极。 每个光电二极管包括与其它光电二极管中的非晶半导体层不同的一个掺杂非晶半导体层接触的本征非晶半导体层，并且布置在两个电极之间。 每对光电二极管包括布置在光电二极管之间的电极之一。 在每个像素中：每个电极包括不叠置在像素的其他电极上的导电部分，并且电连接到填充有导电材料的一个互连孔; 并且导电材料的部分大致重叠在电极的非重叠部分中的每一个上。

公开(公告)号：US08766385B2

公开(公告)日：2014-07-01

申请号：US13231272

申请日：2011-09-13

Applicant: Pierre Gidon ,  Gilles Grand ,  Laurent Frey ,  Pascale Parrein

Inventor： Pierre Gidon ,  Gilles Grand ,  Laurent Frey ,  Pascale Parrein

IPC: H01L31/0232 ,  H01L21/00

CPC classification number: G02B5/201 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14627 ,  H01L31/02162

Abstract: Filtering matrix structure comprising at least three color filters and a plurality of near Infrared filters, each one of the color filters and the near Infrared filters having an optimum transmission frequency, wherein the filtering matrix structure is made of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), each of the n metal layers (m1, m2, m3) having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of each color filter and each near Infrared filter, n being an integer larger than or equal to 2.Application to 3D mapping and imaging.

Abstract translation: 滤波矩阵结构包括至少三个滤色器和多个近红外滤光器，每个滤色器和近红外滤光器具有最佳透射频率，其中滤光矩阵结构由n个金属层（m1，m2， m3）和在第一金属层（m1）和第n基本透明层（d3）之间交替的n个基本上透明的层（d1，d2，d3），n个金属层（m1，m2，m3）中的每一个具有常数 厚度和至少一个具有可变厚度的基本上透明的层，其设置每个滤色器和每个近红外滤光器的最佳透射频率，n是大于或等于2的整数。应用于3D映射和成像。

公开(公告)号：US08587080B2

公开(公告)日：2013-11-19

申请号：US12373832

申请日：2007-07-17

Applicant: Pierre Gidon ,  Gilles Grand

Inventor： Pierre Gidon ,  Gilles Grand

IPC: H01L31/0232

CPC classification number: H01L27/14621 ,  G02B5/201 ,  G02B5/288 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14632

Abstract: The invention relates to an optical filtering structure consisting of a set of at least two elementary optical filters (R, V, B), an elementary optical filter being centered on an optimum transmission frequency, characterized in that it comprises a stack of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), the n metal layers (m1, m2, m3) each having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of an elementary optical filter, n being an integer larger than or equal to 2.Application to miniature image sensors.

Abstract translation: 本发明涉及一种由一组至少两个基本滤光器（R，V，B）组成的光学滤波结构，以最佳透射频率为中心的元件滤光器，其特征在于，其包括n个金属层 （m1，m2，m3）和在第一金属层（m1）和第n基本透明层（d3）之间交替的n个基本上透明的层（d1，d2，d3），n个金属层（m1，m2，m3） 每个具有恒定的厚度和至少一个具有可变厚度的基本上透明的层，其设置基本滤光器的最佳透射频率，n是大于或等于2的整数。应用于微型图像传感器。

公开(公告)号：US06891242B2

公开(公告)日：2005-05-10

申请号：US10479966

申请日：2003-04-10

Applicant: Pierre Gidon ,  Philippe Pantigny

Inventor： Pierre Gidon ,  Philippe Pantigny

IPC: H01L27/146 ,  H01L31/02 ,  H01L31/10 ,  H01L27/148 ,  H01L31/00 ,  H01L31/113 ,  H01L33/00 ,  H01L31/62

CPC classification number: H01L27/1465 ,  H01L31/02002

Abstract: An array of photodetectors intended to be hybridized on a readout circuit and fabricated from a wafer in semiconductor material. The wafer is divided into pixels, the pixels being separated from one another by walls formed crosswise over the entire thickness of the wafer, the hybridization surface having connection pads enabling hybridization of the photodetector array to the readout circuit.

Abstract translation: 一组光电检测器，旨在在读出电路上杂化并由半导体材料中的晶片制成。 晶片被分成像素，像素通过在晶片的整个厚度上交叉形成的壁彼此分离，杂交表面具有能够使光电检测器阵列与读出电路杂交的连接焊盘。

公开(公告)号：US08780257B2

公开(公告)日：2014-07-15

申请号：US13443474

申请日：2012-04-10

Applicant: Pierre Gidon

Inventor： Pierre Gidon

IPC: G03B13/00 ,  H04N3/14 ,  H04N5/225 ,  G02B27/10

CPC classification number: H01L27/14627 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1464 ,  H04N5/2254 ,  H04N5/23212

Abstract: An imager device including: an imager integrated circuit comprising a matrix of pixels, several first, second and third focusing means such that each focusing means is provided facing a group of four associated pixels forming a 2×2 matrix, and is capable of focusing light rays to the group of associated pixels, and perform focusing which are different and equivalent to an arrangement of groups of associated pixels at three distances which are different toward the inlet face for light rays in the imager device, fourth means capable of passing, with respect to each group of pixels, the light rays directed toward said group and passing through the focusing means associated with said group, and capable of blocking the light rays directed toward said group and passing through the other focusing means.

Abstract translation: 一种成像器件，包括：成像器集成电路，包括像素矩阵，若干第一，第二和第三聚焦装置，使得每个聚焦装置面向一组形成2×2矩阵的四个相关联像素，并且能够聚焦光 并且执行与成像器装置中的光线的入射面不同的三个距离处的相关联像素组的布置不同并且等效的聚焦，第四装置能够相对于 对于每组像素，所述光线指向所述组并且通过与所述组相关联的聚焦装置，并且能够阻挡朝向所述组并且穿过另一个聚焦装置的光线。

公开(公告)号：US08735953B2

公开(公告)日：2014-05-27

申请号：US12551715

申请日：2009-09-01

Applicant: Pierre Gidon ,  Yvon Cazaux

Inventor： Pierre Gidon ,  Yvon Cazaux

IPC: H01L31/062

CPC classification number: H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

Abstract: An image sensor comprising at least: CMOS-type photodiodes and transistors produced in a semiconductor layer having a thickness of between approximately 1 μm and 1.5 μm, a dielectric layer in which electrical interconnect layers are made, which are electrically connected to one another and/or to the CMOS photodiodes and/or transistors, said dielectric layer being arranged against a first face of the semiconductor layer opposite a second face of the semiconductor layer through which the light received by the sensor from the exterior is intended to enter, light-reflecting means arranged in the dielectric layer, opposite the photodiodes, and capable of reflecting at least a portion of the light received by the sensor towards the photodiodes.

Abstract translation: 一种图像传感器，至少包括：CMOS型光电二极管和在厚度为约1μm至1.5μm之间的半导体层中制造的晶体管，形成电互连层的电介质层，其彼此电连接和/ 或所述CMOS光电二极管和/或晶体管，所述电介质层被布置成抵靠所述半导体层的与所述半导体层的第二面相反的第一面，所述传感器从外部接收的光将通过所述第二面进入，反射 布置在电介质层中的与光电二极管相对的装置，并且能够将由传感器接收的光的至少一部分反射到光电二极管。