Abstract:
Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.
Abstract:
Systems and methods for a focused field avalanche photodiode (APD) may include an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer. Oxide interfaces are located at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region. The APD may absorb an optical signal in the absorbing layer to generate carriers, and direct them to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces. The doping profiles in the N-doped layer and the P-doped layer may have a peak concentration midway between the oxide interfaces, or the N-doped layer may have a peak concentration midway between the oxide interfaces while the P-doped layer may have a minimum concentration there.
Abstract:
Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.
Abstract:
Methods and systems for hybrid integration of optical communication systems are disclosed and may include receiving a continuous wave (CW) optical signal in a silicon photonics die (SPD) from an optical source external to the SPD. The received CW optical signal may be processed based on electrical signals received from an electronics die bonded to the SPD via metal interconnects. A modulated optical signal may be received in the SPD from optical fibers coupled to the SPD. An electrical signal may be generated in the SPD based on the received modulated optical signal and communicated to the electronics die via the metal interconnects. The CW optical signal may be received from an optical source assembly coupled to the SPD and/or from one or more optical fibers coupled to the SPD. The received CW optical signal may be processed utilizing one or more optical modulators, which may comprise Mach-Zehnder interferometer modulators.
Abstract:
Methods and systems for hybrid integration of optical communication systems are disclosed and may include receiving continuous wave (CW) optical signals in a silicon photonics die (SPD) from an optical source external to the SPD. The received CW optical signals may be processed based on electrical signals received from an electronics die bonded to the SPD via metal interconnects. Modulated optical signals may be received in the SPD from optical fibers coupled to the SPD. Electrical signals may be generated in the SPD based on the received modulated optical signals and communicated to the electronics die via the metal interconnects. The CW optical signals may be received from an optical source assembly coupled to the SPD and/or from one or more optical fibers coupled to the SPD. The received CW optical signals may be processed utilizing one or more optical modulators, which may comprise Mach-Zehnder interferometer modulators.
Abstract:
Methods and systems for a chip-on-wafer-on-substrate assembly are disclosed and may include in an integrated optical communication system comprising an electronics die and a substrate. The electronics die is bonded to a first surface of a photonic interposer and the substrate is coupled to a second surface of the photonic interposer opposite to the first surface. An optical fiber and a light source assembly are coupled to the second surface of the interposer in one or more cavities formed in the substrate. The integrated optical communication system is operable to receive a continuous wave (CW) optical signal in the photonic interposer from the light source assembly; and communicate a modulated optical signal to the optical fiber from said photonic interposer. A mold compound may be on the first surface of the interposer and in contact with the electronics die. The received CW optical signal may be coupled to an optical waveguide in the photonic interposer using a grating coupler.
Abstract:
Methods and systems for an optical connection service interface may include, in an optical data link comprising an optical fiber, a local control system, first and second transceivers at ends of the optical fiber, generating a control signal for the local control system at a low frequency and communicating, utilizing the optical fiber, an optical data signal at a high frequency and an optical service signal for an Optical Connection Service interface (OCSi) at an intermediate frequency. An optical signal may be modulated at the intermediate frequencies for the OCSi, and may be modulated and communicated to the second transceiver. The communicated modulated signal and the optical data signal may be detected utilizing a photodetector in the second transceiver. The detected optical signal may be demodulated, and an optical power of the optical data signal may be configured based on the demodulated signal.
Abstract:
Methods and systems for an optical connection service interface may include, in an optical data link comprising an optical fiber, a local control system, first and second transceivers at ends of the optical fiber, generating a control signal for the local control system at frequencies 10 kHz and an optical service signal for an Optical Connection Service interface (OCSi) at intermediate frequencies between 10 Hz and 10 kHz. An optical signal may be modulated at the intermediate frequencies for the OCSi, and may be modulated and communicated to the second transceiver. The communicated modulated signal and the optical data signal may be detected utilizing a photodetector in the second transceiver. The detected optical signal may be demodulated, and an optical power of the optical data signal may be configured based on the demodulated signal.
Abstract:
A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a CMOS SOI wafer are disclosed and may include receiving optical signals via a top surface of a photonically-enabled CMOS chip; and generating electrical signals in the chip utilizing one or more HPTs that detect optical signals. The HPTs may comprise a base and a split collector, with the split collector comprising a silicon-on-insulator (SOI) layer and a germanium layer. The thickness of the germanium layer may be such that carriers in the base do not interact with defects from an interface between the SOI layer and the germanium layer. The electrical signals may be amplified by amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. An electrode formed longitudinally in the direction of light travel through the HPTs may bias the base of the HPTs.
Abstract:
Methods and systems for an optical connection service interface may include, in an optical data link comprising an optical fiber coupling first and second transceivers, generating a signal for the transceivers at a low frequency, and communicating, utilizing the optical fiber, an optical data signal at a high frequency and an Optical Connection Service interface (OCSi) signal at an intermediate frequency. An optical signal may be modulated at the intermediate frequencies for the OCSi, and may be modulated and communicated to the second transceiver. The communicated modulated signal and the optical data signal may be detected utilizing a photodetector in the second transceiver. The detected optical signal may be demodulated, and an optical power of the optical data signal may be configured based on the demodulated signal.