公开(公告)号：US11355348B2

公开(公告)日：2022-06-07

申请号：US16847902

申请日：2020-04-14

Applicant: Micron Technology, Inc.

Inventor： Gurpreet Lugani ,  Kyle B. Campbell ,  Mario J. Di Cino ,  Aaron W. Freese ,  Alex Kogan ,  Kevin R. Shea

IPC: H01L21/30 ,  H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  G11C11/22 ,  H01L21/311 ,  H01L21/3213

Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating. After the removing, the pattern-interrupting second feature in the lower substrate material is used as a reference location to reckon which of the two different composition masking materials was used to make first spaces between the first features in an analysis area in the material that was above the lower substrate material or which of the two different composition masking materials was used to make second spaces between the first features in the analysis area that alternate with the first spaces. Structure independent of method is disclosed.

公开(公告)号：US10692727B2

公开(公告)日：2020-06-23

申请号：US16043869

申请日：2018-07-24

Applicant: Micron Technology, Inc.

Inventor： Gurpreet Lugani ,  Kyle B. Campbell ,  Mario J. Di Cino ,  Aaron W. Freese ,  Alex Kogan ,  Kevin R. Shea

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  G11C11/22 ,  H01L21/311 ,  H01L21/3213

Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating. After the removing, the pattern-interrupting second feature in the lower substrate material is used as a reference location to reckon which of the two different composition masking materials was used to make first spaces between the first features in an analysis area in the material that was above the lower substrate material or which of the two different composition masking materials was used to make second spaces between the first features in the analysis area that alternate with the first spaces. Structure independent of method is disclosed.

公开(公告)号：US08883591B2

公开(公告)日：2014-11-11

申请号：US13890160

申请日：2013-05-08

Applicant: Micron Technology, Inc.

Inventor： Kevin R. Shea

IPC: H01L21/8234 ,  H01L21/8244 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/311 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L21/306 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/76865 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/91

Abstract: Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride. A method is provided for producing an isolated capacitor, which can be used in a dynamic random access memory cell array, on a substrate using sacrificial layers selectively removed to expose outer surfaces of the bottom electrode.

Abstract translation: 用于蚀刻金属氮化物和金属氧化物的方法包括使用超稀释HF溶液和含有最少量的氢氟酸物质H 2 F 2的缓冲的低pH HF溶液。 蚀刻剂可用于相对于掺杂或未掺杂的氧化物，钨，多晶硅和氮化钛选择性地除去金属氮化物层。 提供了一种用于在衬底上产生可用于动态随机存取存储器单元阵列中的隔离电容器的方法，该牺牲层选择性地去除以暴露底部电极的外表面。

公开(公告)号：US20200266071A1

公开(公告)日：2020-08-20

申请号：US16847902

申请日：2020-04-14

Applicant: Micron Technology, Inc.

Inventor： Gurpreet Lugani ,  Kyle B. Campbell ,  Mario J. Di Cino ,  Aaron W. Freese ,  Alex Kogan ,  Kevin R. Shea

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/311 ,  G11C11/22 ,  H01L21/027

Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating. After the removing, the pattern-interrupting second feature in the lower substrate material is used as a reference location to reckon which of the two different composition masking materials was used to make first spaces between the first features in an analysis area in the material that was above the lower substrate material or which of the two different composition masking materials was used to make second spaces between the first features in the analysis area that alternate with the first spaces. Structure independent of method is disclosed.

公开(公告)号：US20200035498A1

公开(公告)日：2020-01-30

申请号：US16043869

申请日：2018-07-24

Applicant: Micron Technology, Inc.

Inventor： Gurpreet Lugani ,  Kyle B. Campbell ,  Mario J. Di Cino ,  Aaron W. Freese ,  Alex Kogan ,  Kevin R. Shea

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  G11C11/22

Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating. After the removing, the pattern-interrupting second feature in the lower substrate material is used as a reference location to reckon which of the two different composition masking materials was used to make first spaces between the first features in an analysis area in the material that was above the lower substrate material or which of the two different composition masking materials was used to make second spaces between the first features in the analysis area that alternate with the first spaces. Structure independent of method is disclosed.

公开(公告)号：US20160027863A1

公开(公告)日：2016-01-28

申请号：US14791114

申请日：2015-07-02

Applicant: Micron Technology, Inc.

Inventor： Brett W. Busch ,  Mingtao Li ,  Lequn Jennifer Liu ,  Kevin R. Shea ,  Belford T. Coursey ,  Jonathan T. Doebler

IPC: H01L49/02 ,  H01L23/525

CPC classification number: H01L28/40 ,  H01L23/5252 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.

Abstract translation: 形成电容器的方法包括在衬底上提供支撑材料。 支撑材料是半导体或导电中的至少一种。 开口形成支撑材料。 开口包括半导体或导电侧壁中的至少一个。 沿着半导体和/或导电开口侧壁沉积绝缘体。 一对电容器电极之间具有电容器电介质形成在相应的开口内横向向内沉积的绝缘体。 各个开口内的一对电容器电极之一横向邻近沉积的绝缘体。 公开了其它方面，包括独立于制造方法的集成电路。

公开(公告)号：US20140162459A1

公开(公告)日：2014-06-12

申请号：US13712830

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/308

CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.

Abstract translation: 在衬底上形成图案的方法包括在第二材料中形成的第一开口的高度向外突出形成间隔开的第一材料包括柱。 在第一含材料柱的侧壁上形成侧壁间隔物。 侧壁间隔物在第一含材料柱的横向向外形成间隙空间。 间隙空间由四个第一材料包括柱的侧壁上的纵向接触的侧壁间隔单独包围。

公开(公告)号：US20150031212A1

公开(公告)日：2015-01-29

申请号：US14514264

申请日：2014-10-14

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Kevin R. Shea

IPC: H01L21/306 ,  H01L49/02

CPC classification number: H01L21/306 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/76865 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/91

Abstract: Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride. A method is provided for producing an isolated capacitor, which can be used in a dynamic random access memory cell array, on a substrate using sacrificial layers selectively removed to expose outer surfaces of the bottom electrode.

Abstract translation: 用于蚀刻金属氮化物和金属氧化物的方法包括使用超稀释HF溶液和含有最少量的氢氟酸物质H 2 F 2的缓冲的低pH HF溶液。 蚀刻剂可用于相对于掺杂或未掺杂的氧化物，钨，多晶硅和氮化钛选择性地除去金属氮化物层。 提供了一种用于在衬底上产生可用于动态随机存取存储器单元阵列中的隔离电容器的方法，该牺牲层选择性地去除以暴露底部电极的外表面。

公开(公告)号：US08846542B2

公开(公告)日：2014-09-30

申请号：US14180197

申请日：2014-02-13

Applicant: Micron Technology, Inc.

Inventor： Kevin R. Shea ,  Thomas M. Graettinger

IPC: H01L21/302 ,  H01L21/316 ,  H01L21/318 ,  H01L49/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  H01L27/108 ,  H01L27/105

CPC classification number: H01L28/92 ,  H01L21/30625 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108

Abstract: The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.

Abstract translation: 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。 在随后的处理中，容器可以并入电容器中。

公开(公告)号：US08691704B2

公开(公告)日：2014-04-08

申请号：US13904828

申请日：2013-05-29

Applicant: Micron Technology, Inc.

Inventor： Kevin R. Shea ,  Thomas M. Graettinger

IPC: H01L21/302 ,  H01L21/318 ,  H01L21/316

CPC classification number: H01L28/92 ,  H01L21/30625 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108

Abstract: The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.