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公开(公告)号:US20240143501A1
公开(公告)日:2024-05-02
申请号:US18494841
申请日:2023-10-26
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Luigi Pilolli , Liang Yu , Ali Mohammadzadeh , Walter Di Francesco , Biagio Iorio
CPC classification number: G06F12/0246 , G06F1/28
Abstract: A memory device includes a plurality of memory dies. Each memory die of the plurality of memory dies includes a memory die and control logic, operatively coupled with the memory die, to perform operations including receiving, during a current auxiliary data communication cycle, a token to enable auxiliary data communication, in response to receiving the token, determining whether to communicate auxiliary data via an auxiliary data channel to at least one other memory die of a plurality of memory dies, and in response to determining to communicate the auxiliary data via the auxiliary data channel to the at least one other memory die, causing the auxiliary data to be communicated to the at least one other memory die.
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公开(公告)号:US20220083241A1
公开(公告)日:2022-03-17
申请号:US16948426
申请日:2020-09-17
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Ali Mohammadzadeh , Biagio Iorio , Walter Di Francesco , Yuanhang Cao , Luca De Santis , Fumin Gu
IPC: G06F3/06
Abstract: A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and control logic. The control logic comprises a plurality of processing threads to execute memory access operations on the memory array concurrently, a thread selection component to identify one or more processing threads of the plurality of processing threads for a power management cycle of the associated memory die and a power management component to determine an amount of power associated with the one or more processing threads and request the amount of power during the power management cycle.
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公开(公告)号:US20240061592A1
公开(公告)日:2024-02-22
申请号:US18231338
申请日:2023-08-08
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Jonathan S. Parry , Luca Nubile , Ali Mohammadzadeh , Biagio Iorio , Liang Yu , Jeremy Binfet , Walter Di Francesco , Daniel J. Hubbard , Luigi Pilolli
IPC: G06F3/06 , G06F1/3234
CPC classification number: G06F3/0625 , G06F3/0659 , G06F3/0679 , G06F1/3275
Abstract: A method includes receiving a request to perform a memory access operation, wherein the memory access operation includes a set of sub-operations, selecting a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the respective sub-operation based on a set of peak power management (PPM) operation parameters, and causing the memory access operation to be performed using PPM based on the current quantization data structure.
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公开(公告)号:US11775185B2
公开(公告)日:2023-10-03
申请号:US16948426
申请日:2020-09-17
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Ali Mohammadzadeh , Biagio Iorio , Walter Di Francesco , Yuanhang Cao , Luca De Santis , Fumin Gu
CPC classification number: G06F3/0625 , G06F3/0655 , G06F3/0679 , G06F9/505 , G06F9/5094 , G06F2209/5018
Abstract: A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and control logic. The control logic comprises a plurality of processing threads to execute memory access operations on the memory array concurrently, a thread selection component to identify one or more processing threads of the plurality of processing threads for a power management cycle of the associated memory die and a power management component to determine an amount of power associated with the one or more processing threads and request the amount of power during the power management cycle.
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公开(公告)号:US20230305616A1
公开(公告)日:2023-09-28
申请号:US18123399
申请日:2023-03-20
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Walter Di Francesco , Luigi Pilolli
IPC: G06F1/3225 , G06F1/10
CPC classification number: G06F1/3225 , G06F1/10
Abstract: A memory device includes memory dies, a first memory die of the memory dies including a memory array and control logic, operatively coupled with the memory array, to perform peak power management (PPM) operations including receiving a token from another memory die, in response to receiving the token, determining whether to reserve a data window during a token circulation time period having a first size determined based on a common clock signal shared among the memory dies and, in response to determining to reserve the data window, causing the data window to be reserved. The data window has a second size different from the first size determined based on the common clock signal. The operations further include causing a data frame to be generated within the data window. The data frame has a third size determined from the second size and includes current consumption information for the memory device.
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公开(公告)号:US20220011970A1
公开(公告)日:2022-01-13
申请号:US16946871
申请日:2020-07-09
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Luca De Santis
IPC: G06F3/06
Abstract: A processing device in a memory sub-system assigns each of a plurality of memory units associated with one or more memory die of a memory device a unique address by which each of the plurality of memory units is identified. The processing device further sends a multi-unit status command to the memory device, the multi-unit status command specifying a subset of the plurality of memory units using corresponding unique addresses and receives a response to the multi-unit status command, the response comprising a multi-bit value comprising a plurality of bits, wherein each bit of the plurality of bits represents a status of one or more parameters of a plurality of parameters for a corresponding one of the plurality of memory units.
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公开(公告)号:US12282669B2
公开(公告)日:2025-04-22
申请号:US18621747
申请日:2024-03-29
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Walter Di Francesco , Fumin Gu , Ali Mohammadzadeh , Biagio Iorio , Liang Yu
IPC: G06F3/06
Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array. The control logic allocates power to one or more prioritized processing threads, of a plurality of processing threads that access the memory array, based on a value of a priority ring counter. The control logic starts a timer in response to detecting allocation of the power to a non-prioritized processing thread of the plurality of processing threads. While the timer is running, the control logic increments the priority ring counter before each power management cycle and prioritizes allocation of the power to the one or more prioritized processing threads located within a subset of the plurality of processing threads corresponding to a value of the priority ring counter.
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公开(公告)号:US20250069636A1
公开(公告)日:2025-02-27
申请号:US18939609
申请日:2024-11-07
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Yankang He , Walter Di Francesco , Luca Nubile , Chang Siau
IPC: G11C11/406 , G11C11/4072 , G11C11/4094
Abstract: One example of a memory device includes an array of flash memory cells, an array of Dynamic Random Access Memory (DRAM) memory cells, and a controller. The controller is configured to execute first instructions stored in the array of DRAM memory cells to access the array of flash memory cells.
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公开(公告)号:US20230377626A1
公开(公告)日:2023-11-23
申请号:US17747183
申请日:2022-05-18
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Yankang He , Walter Di Francesco , Luca Nubile , Chang Siau
IPC: G11C11/406 , G11C11/4072 , G11C11/4094
CPC classification number: G11C11/40611 , G11C11/40622 , G11C11/4072 , G11C11/4094
Abstract: One example of a memory device includes an array of flash memory cells, an array of Dynamic Random Access Memory (DRAM) memory cells, and a controller. The controller is configured to execute first instructions stored in the array of DRAM memory cells to access the array of flash memory cells.
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公开(公告)号:US11681467B2
公开(公告)日:2023-06-20
申请号:US16946871
申请日:2020-07-09
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Luca De Santis
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0673
Abstract: A processing device in a memory sub-system assigns each of a plurality of memory units associated with one or more memory die of a memory device a unique address by which each of the plurality of memory units is identified. The processing device further sends a multi-unit status command to the memory device, the multi-unit status command specifying a subset of the plurality of memory units using corresponding unique addresses and receives a response to the multi-unit status command, the response comprising a multi-bit value comprising a plurality of bits, wherein each bit of the plurality of bits represents a status of one or more parameters of a plurality of parameters for a corresponding one of the plurality of memory units.
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