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    Cobalt filling of interconnects in microelectronics
    1.
    发明授权
    Cobalt filling of interconnects in microelectronics 有权

    公开(公告)号：US10995417B2

    公开(公告)日：2021-05-04

    申请号：US15739314

    申请日：2016-06-30

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

    IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

    Cobalt Filling of Interconnects in Microelectronics
    4.
    发明申请
    Cobalt Filling of Interconnects in Microelectronics 有权

    公开(公告)号：US20210222314A1

    公开(公告)日：2021-07-22

    申请号：US17220540

    申请日：2021-04-01

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, JR. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

    IPC: C25D7/12 ,  C25D3/16 ,  C25D3/56

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

    Cobalt Filling of Interconnects
    5.
    发明申请
    Cobalt Filling of Interconnects 审中-公开

    公开(公告)号：US20190010624A1

    公开(公告)日：2019-01-10

    申请号：US15641756

    申请日：2017-07-05

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Kyle Whitten ,  Vincent Paneccasio, JR. ,  Shaopeng Sun ,  Eric Yakobson

    IPC: C25D3/16 ,  H01L21/768 ,  C25D5/02 ,  C25D7/12

    Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

    Cobalt filling of interconnects in microelectronics
    6.
    发明授权
    Cobalt filling of interconnects in microelectronics 有权

    公开(公告)号：US11434578B2

    公开(公告)日：2022-09-06

    申请号：US17220540

    申请日：2021-04-01

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

    IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

    Cobalt Filling of Interconnects in Microelectronics
    7.
    发明申请
    Cobalt Filling of Interconnects in Microelectronics 审中-公开

    公开(公告)号：US20200040478A1

    公开(公告)日：2020-02-06

    申请号：US15739314

    申请日：2016-06-30

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun

    IPC: C25D7/12 ,  C25D3/56 ,  C25D3/16

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

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