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公开(公告)号:US11050569B2
公开(公告)日:2021-06-29
申请号:US16541009
申请日:2019-08-14
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chia-Jung Chen , Chin-Hung Chang , Kuen-Long Chang
Abstract: A memory device can include a memory, and an interface to receive a memory command sequence. A message authentication code MAC is provided with the command sequence. Control circuits on the device include a command decoder to decode a received command sequence and to execute an identified memory operation. A message authentication engine includes logic to compute a value of a message authentication code to be matched with the received message authentication code based on the received command sequence and a stored key. The device can store a plurality of keys associated with one or more memory zones in the memory. Logic on the device prevents completion of the memory operation identified by the command sequence if the value computed does not match the received message authentication code.
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公开(公告)号:US12197745B2
公开(公告)日:2025-01-14
申请号:US17817711
申请日:2022-08-05
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chin-Hung Chang , Chia-Jung Chen , Ken-Hui Chen , Chun-Hsiung Hung
IPC: G06F3/06
Abstract: A memory device and an associated control method are provided. The memory device includes a non-volatile memory array and a memory control circuit. The non-volatile memory array includes M secured memory zones. The memory control circuit is electrically connected to the non-volatile memory array. The memory control circuit provides a set of mapping information and searches a request key in the set of mapping information. The set of mapping information represents correspondences between N access keys and the M secured memory zones. The memory control circuit acquires at least one of the M secured memory zones if the request key is one of the N access keys, and performs an access command to the at least one of the M secured memory zones. M and N are positive integers.
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公开(公告)号:US20200057575A1
公开(公告)日:2020-02-20
申请号:US15998456
申请日:2018-08-15
Applicant: Macronix International Co., Ltd.
Inventor: Chia-Jung Chen , Chin-Hung Chang , Ken-Hui Chen
IPC: G06F3/06
Abstract: A multi-chip package, a controlling method of the multi-chip package and a security chip are provided. The multi-chip package includes a memory chip and a security chip. The security chip is coupled between the memory chip and a host. The security chip includes a processing circuit. The processing circuit is for enabling a security path to input an input-output signal into the processing circuit for executing a security procedure and accessing the memory chip, if a command is received by the processing circuit and the command includes a security requirement.
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公开(公告)号:US09147449B2
公开(公告)日:2015-09-29
申请号:US13861970
申请日:2013-04-12
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Tien-Yen Wang , Chun-Hsiung Hung , Chia-Jung Chen
CPC classification number: G11C13/004 , G11C7/02 , G11C7/12 , G11C7/14 , G11C11/5678 , G11C13/0004 , G11C2013/0045 , G11C2013/0054
Abstract: A sensing method for a memory is provided. The memory includes: a memory cell; a reference circuit generating a reference voltage and a clamp voltage; and a current supplying circuit receiving the clamp voltage to develop a cell current passing through the memory cell to form a cell voltage, wherein the cell voltage is used for incorporating with the reference voltage to determine the information stored in the memory.
Abstract translation: 提供了一种用于存储器的感测方法。 存储器包括:存储器单元; 产生参考电压和钳位电压的参考电路; 以及电流供给电路,其接收所述钳位电压以开发通过所述存储单元的单元电流以形成单元电压,其中所述单元电压用于与所述参考电压结合以确定存储在所述存储器中的信息。
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公开(公告)号:US11763867B2
公开(公告)日:2023-09-19
申请号:US17834287
申请日:2022-06-07
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chin-Hung Chang , Chia-Jung Chen , Ken-Hui Chen , Kuen-Long Chang
CPC classification number: G11C7/24 , G06F21/44 , H04L9/3278
Abstract: A memory device comprises an array of memory cells, a physically unclonable function PUF circuit in the memory device to generate a PUF code, a data path connecting a first circuit to a second circuit in the memory device coupled to the array of memory cells, and logic circuitry to encode data on the data path from the first circuit using the PUF code to produce encoded data, and to provide the encoded data to the second circuit.
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公开(公告)号:US10032511B1
公开(公告)日:2018-07-24
申请号:US15599350
申请日:2017-05-18
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chun-Hsiung Hung , Chia-Jung Chen
IPC: G11C13/00
Abstract: For a memory array including a plurality of bit lines, and a set of write drivers having a number N members configured for connection in parallel to a selected set of N bit lines in the plurality of bit lines, write logic is coupled to the set of write drivers which enables a permissible number less than said number N of said members of the set of write drivers to apply a write pulse in parallel in a write operation. The write logic can dynamically assign permissible numbers to iterations in an iterative write sequence. A power source, such as charge pump circuitry, coupled to the set of write drivers can be utilized more efficiently in systems applying permissible bit write logic, enabling higher throughput or utilizing lower peak power.
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公开(公告)号:US20150023120A1
公开(公告)日:2015-01-22
申请号:US14506768
申请日:2014-10-06
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chin-Hung Chang , Chia-Jung Chen , Su-Chueh Lo , Ken-Hui Chen , Kuen-Long Chang
CPC classification number: G11C7/1048 , G11C7/06 , G11C7/08 , G11C7/106 , G11C7/12 , G11C7/18 , G11C2207/002
Abstract: A read operation for a memory device is provided. A selected word line, first and second global bit line groups and a selected first bit line group are precharged. A first cell current flowing through the selected word line, the first and the selected first bit line groups is generated. A first reference current flowing through the second global bit line group is generated. A first half page data is read based on the first cell current and the first reference current. The selected word line, the first and the second global bit line groups are kept precharged.
Abstract translation: 提供了存储器件的读取操作。 选择的字线,第一和第二全局位线组和所选择的第一位线组被预先充电。 流过所选字线的第一单元电流,产生第一和所选择的第一位线组。 产生流过第二全局位线组的第一参考电流。 基于第一单元电流和第一参考电流来读取前半页数据。 所选择的字线,第一和第二全局位线组保持预充电。
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公开(公告)号:US12136471B2
公开(公告)日:2024-11-05
申请号:US18231611
申请日:2023-08-08
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chin-Hung Chang , Chia-Jung Chen , Ken-Hui Chen , Kuen-Long Chang
Abstract: A memory device comprises an array of memory cells, a physically unclonable function PUF circuit in the memory device to generate a PUF code, a data path connecting a first circuit to a second circuit in the memory device coupled to the array of memory cells, and logic circuitry to encode data on the data path from the first circuit using the PUF code to produce encoded data, and to provide the encoded data to the second circuit.
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公开(公告)号:US20240184668A1
公开(公告)日:2024-06-06
申请号:US18191401
申请日:2023-03-28
Applicant: Macronix International Co., Ltd.
Inventor: Chin-Hung Chang , Chia-Jung Chen , Ken-Hui Chen
IPC: G06F11/10
CPC classification number: G06F11/1044
Abstract: Systems, devices, methods, and circuits for managing status output are provided. In one aspect, a semiconductor device includes: a memory array configured to store data and a circuitry coupled to the memory array and configured to execute a read operation in the memory array and output a read packet based on a result of the execution of the read operation. The read packet includes readout data and error information associated with the readout data. The error information is indicated by at least one of an error code or one or more secure codes in the read packet.
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公开(公告)号:US11380379B2
公开(公告)日:2022-07-05
申请号:US17087085
申请日:2020-11-02
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chin-Hung Chang , Chia-Jung Chen , Ken-Hui Chen , Kuen-Long Chang
Abstract: A memory device comprises an array of memory cells, a physically unclonable function PUF circuit in the memory device to generate a PUF code, a data path connecting a first circuit to a second circuit in the memory device coupled to the array of memory cells, and logic circuitry to encode data on the data path from the first circuit using the PUF code to produce encoded data, and to provide the encoded data to the second circuit.
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