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    Forming facet-less epitaxy with self-aligned isolation
    3.
    发明授权
    Forming facet-less epitaxy with self-aligned isolation 有权
    用自对准隔离形成无面外延

    公开(公告)号：US08969163B2

    公开(公告)日：2015-03-03

    申请号：US13556406

    申请日：2012-07-24

    申请人： Michael V. Aquilino ,  Byeong Yeol Kim ,  Ying Li ,  Carl John Radens

    发明人： Michael V. Aquilino ,  Byeong Yeol Kim ,  Ying Li ,  Carl John Radens

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/70

    CPC分类号： H01L21/76232 ,  H01L29/66628 ,  H01L29/66636

    摘要： A method of forming a semiconductor structure may include preparing a continuous active layer in a region of the substrate and forming a plurality of adjacent gates on the continuous active layer. A first raised epitaxial layer may be deposited on a recessed region of the continuous active layer between a first and a second one of the plurality of gates, whereby the first and second gates are adjacent. A second raised epitaxial layer may be deposited on another recessed region of the continuous active layer between the second and a third one of the plurality of gates, whereby the second and third gates are adjacent. Using a cut mask, a trench structure is etched into the second gate structure and a region underneath the second gate in the continuous active layer. The trench is filled with isolation material for electrically isolating the first and second raised epitaxial layers.

    摘要翻译： 形成半导体结构的方法可以包括在衬底的区域中制备连续有源层，并在连续有源层上形成多个相邻栅极。 第一凸起的外延层可以沉积在多个栅极中的第一和第二栅极之间的连续有源层的凹陷区域上，由此第一和第二栅极相邻。 第二凸起的外延层可以沉积在多个栅极中的第二和第三栅极之间的连续有源层的另一个凹陷区域上，由此第二和第三栅极相邻。 使用切割掩模，沟槽结构被蚀刻到第二栅极结构中以及连续有源层中的第二栅极下方的区域。 沟槽填充有用于电隔离第一和第二凸起外延层的隔离材料。

    FORMING FACET-LESS EPITAXY WITH SELF-ALIGNED ISOLATION
    4.
    发明申请
    FORMING FACET-LESS EPITAXY WITH SELF-ALIGNED ISOLATION 有权
    具有自对准隔离的成形面较小的外观

    公开(公告)号：US20140027820A1

    公开(公告)日：2014-01-30

    申请号：US13556406

    申请日：2012-07-24

    申请人： Michael V. Aquilino ,  Byeong Yeol Kim ,  Ying Li ,  Carl John Radens

    发明人： Michael V. Aquilino ,  Byeong Yeol Kim ,  Ying Li ,  Carl John Radens

    IPC分类号： H01L21/336 ,  H01L29/78

    CPC分类号： H01L21/76232 ,  H01L29/66628 ,  H01L29/66636

    摘要： A method of forming a semiconductor structure may include preparing a continuous active layer in a region of the substrate and forming a plurality of adjacent gates on the continuous active layer. A first raised epitaxial layer may be deposited on a recessed region of the continuous active layer between a first and a second one of the plurality of gates, whereby the first and second gates are adjacent. A second raised epitaxial layer may be deposited on another recessed region of the continuous active layer between the second and a third one of the plurality of gates, whereby the second and third gates are adjacent. Using a cut mask, a trench structure is etched into the second gate structure and a region underneath the second gate in the continuous active layer. The trench is filled with isolation material for electrically isolating the first and second raised epitaxial layers.

    摘要翻译： 形成半导体结构的方法可以包括在衬底的区域中制备连续有源层，并在连续有源层上形成多个相邻栅极。 第一凸起的外延层可以沉积在多个栅极中的第一和第二栅极之间的连续有源层的凹陷区域上，由此第一和第二栅极相邻。 第二凸起的外延层可以沉积在多个栅极中的第二和第三栅极之间的连续有源层的另一个凹陷区域上，由此第二和第三栅极相邻。 使用切割掩模，沟槽结构被蚀刻到第二栅极结构中以及连续有源层中的第二栅极下方的区域。 沟槽填充有用于电隔离第一和第二凸起外延层的隔离材料。

    LEAK DETECTION SYSTEM AND METHOD OF USE THEREOF
    5.
    发明申请
    LEAK DETECTION SYSTEM AND METHOD OF USE THEREOF 有权

    公开(公告)号：US20220003626A1

    公开(公告)日：2022-01-06

    申请号：US16995955

    申请日：2020-08-18

    申请人： William Smith ,  Ying Li ,  Duncan Hywel-Evans

    发明人： William Smith ,  Ying Li ,  Duncan Hywel-Evans

    IPC分类号： G01M3/00

    摘要： A leak detection system and method of use thereof is disclosed based on shock wave propagation in a fluid. In one form, the system includes at least one shock wave generator for introducing at least one shock wave signal into a fluid medium; at least one detector for detecting signals in the fluid medium; and at least one processor configured to identify excitation signals in the fluid medium caused by the at least one shock wave signal, wherein the identification of excitation signals is indicative of a fluid leak.

    Method and system for efficient support low duty mode in femtocells
    10.
    发明授权
    Method and system for efficient support low duty mode in femtocells 有权
    在毫微微小区中有效支持低功耗模式的方法和系统

    公开(公告)号：US09264988B2

    公开(公告)日：2016-02-16

    申请号：US13392844

    申请日：2010-08-27

    申请人： Anshuman Nigam ,  Jung-Je Son ,  Ying Li

    发明人： Anshuman Nigam ,  Jung-Je Son ,  Ying Li

    IPC分类号： H04W4/06 ,  H04W52/02 ,  H04W48/08 ,  H04W88/08

    CPC分类号： H04W52/0206 ,  H04W48/08 ,  H04W88/08 ,  Y02D70/00

    摘要： A method and system for handling working of a Low Duty Cycle (LDC) mode of one or more Base Stations (BS) in a wireless communication network. The method includes defining one or more LDC patterns based plurality of LDC parameters associated with one or more BS where the plurality of LDC parameters includes an active period, an inactive period and a start frame offset of the one or more BS in the wireless communication network. The method then sends the one or more LDC patterns notifying Available Interval and Unavailable Interval of each of the one or more patterns to a Mobile Station (MS) by broadcasting one or more LDC patterns, unicasting the one or more LDC pattern to the MS, multicasting the one or more LDC pattern to a group of MSs or send the one or more LDC patterns to one or more MS in a pre-provisioned way.

    摘要翻译： 一种用于在无线通信网络中处理一个或多个基站（BS）的低占空比（LDC）模式的工作的方法和系统。 该方法包括基于与一个或多个BS相关联的多个LDC参数定义一个或多个LDC模式，其中多个LDC参数包括无线通信网络中的一个或多个BS的活动周期，非活动时段和起始帧偏移 。 该方法然后通过广播一个或多个LDC模式将一个或多个模式中的每一个通知可用间隔和不可用间隔的一个或多个LDC模式发送到移动站（MS），将一个或多个LDC模式单播到MS， 将一个或多个LDC模式多播到一组MS，或者以预先提供的方式将一个或多个LDC模式发送到一个或多个MS。