公开(公告)号：US20230148107A1

公开(公告)日：2023-05-11

申请号：US18148662

申请日：2022-12-30

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Jordan D. Greenlee ,  Marko Milojevic

IPC: H01L23/532 ,  H10B41/27 ,  H10B41/35 ,  H01L23/522 ,  H01L27/146 ,  H10N70/00 ,  H01L21/762 ,  H04N21/422 ,  H04N21/21 ,  H10B41/30

CPC classification number: H01L23/53209 ,  H01L27/11556 ,  H01L27/11524 ,  H01L23/5226 ,  H01L27/14636 ,  H01L45/1233 ,  H01L21/76264 ,  H04N21/4222 ,  H04N21/21 ,  H01L27/11521 ,  H01H2231/002

Abstract: A microelectronic device comprises pillar structures extending vertically through an isolation material, conductive lines electrically coupled to the pillar structures, contact structures between the pillar structures and the conductive lines, and interconnect structures between the conductive lines and the contact structures. The conductive lines comprise one or more of titanium, ruthenium, aluminum, and molybdenum. The interconnect structures comprise a material composition that is different than one or more of a material composition of the contact structures and a material composition of the conductive lines. Related memory devices, electronic systems, and methods are also described.

公开(公告)号：US11081364B2

公开(公告)日：2021-08-03

申请号：US16269309

申请日：2019-02-06

Applicant: Micron Technology, Inc.

Inventor： Marko Milojevic ,  John A. Smythe, III

IPC: H01L27/10 ,  H01L21/321 ,  H01L21/3205 ,  H01L21/768 ,  H01L27/108 ,  H01L49/02

Abstract: Systems, apparatuses, and methods related to reduction of crystal growth resulting from annealing a conductive material are described. An example apparatus includes a conductive material selected to have an electrical resistance that is reduced as a result of annealing. A stabilizing material may be formed over a surface of the conductive material. The stabilizing material may be selected to have properties that include stabilization of the reduced electrical resistance of the conductive material and reduction of a degree of freedom of crystal growth relative to the surface resulting from recrystallization of the conductive material during the annealing.

公开(公告)号：US09553264B2

公开(公告)日：2017-01-24

申请号：US14726779

申请日：2015-06-01

Applicant: Micron Technology, Inc.

Inventor： Dale W. Collins ,  Marko Milojevic ,  Scott E. Sills ,  Si-Young Park

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

Abstract: Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.

Abstract translation: 存储单元（例如，CBRAM单元）包括活性材料上的离子源材料和在离子源材料上的包含金属硅化物的电极。 离子源材料可以包括硫族化物材料和金属中的至少一种。 装置，例如系统和装置，包括多个这样的存储单元。 存储单元包括在离子源材料和元素金属电极之间的金属硅化物的粘附材料。 形成存储单元的方法包括形成第一电极，形成活性材料，形成离子源材料，以及在金属离子源材料上形成包括金属硅化物的第二电极。 包括铜和包括钨的材料的材料的粘合方法包括在包括铜的材料上形成硅化钨材料并处理材料。

公开(公告)号：US20240074153A1

公开(公告)日：2024-02-29

申请号：US17896039

申请日：2022-08-25

Applicant: Micron Technology, Inc.

Inventor： Daniel Billingsley ,  Jaydip Guha ,  Marko Milojevic ,  Sau Ha Cheung ,  Luca Fumagalli

IPC: H01L27/108 ,  H01B1/02

CPC classification number: H01L27/10823 ,  H01B1/02 ,  H01L27/10876

Abstract: Methods, apparatuses, and systems related to conductive structures are described. An example conductive structure includes a first conductive material including a conductive metal nitride, where the first conductive material has a thickness of at least 0.5 nanometers, and a second conductive material including a conductive metal, where the second conductive material is disposed on a first surface of the first conductive material.

公开(公告)号：US11735672B2

公开(公告)日：2023-08-22

申请号：US17216269

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Aaron Michael Lowe ,  Zhuo Chen ,  Marko Milojevic ,  Timothy A. Quick ,  Richard J. Hill ,  Scott E. Sills

IPC: H01L29/786 ,  H01L27/13 ,  H01L27/12 ,  H10B53/20 ,  H10B12/00

CPC classification number: H01L29/78642 ,  H01L27/1203 ,  H01L27/13 ,  H10B12/05 ,  H10B12/31 ,  H10B53/20

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11574870B2

公开(公告)日：2023-02-07

申请号：US16990518

申请日：2020-08-11

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Jordan D. Greenlee ,  Marko Milojevic

IPC: H01L23/532 ,  H01L23/522 ,  H01L27/146 ,  H01L27/11556 ,  H01L27/11524 ,  H01L45/00 ,  H01L21/762 ,  H04N21/422 ,  H04N21/21 ,  H01L27/11521

Abstract: A microelectronic device comprises pillar structures extending vertically through an isolation material, conductive lines electrically coupled to the pillar structures, contact structures between the pillar structures and the conductive lines, and interconnect structures between the conductive lines and the contact structures. The conductive lines comprise one or more of titanium, ruthenium, aluminum, and molybdenum. The interconnect structures comprise a material composition that is different than one or more of a material composition of the contact structures and a material composition of the conductive lines. Related memory devices, electronic systems, and methods are also described.

公开(公告)号：US09324943B2

公开(公告)日：2016-04-26

申请号：US14451179

申请日：2014-08-04

Applicant: Micron Technology, Inc.

Inventor： Lei Bi ,  Beth R. Cook ,  Marko Milojevic ,  Durai Vishak Nirmal Ramaswamy

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/08 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0035 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/35 ,  H01L27/2463 ,  H01L45/145

Abstract: Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.

Abstract translation: 描述了包括丝状记忆单元的装置，装置，系统和方法。 描述了基本上去除器件中的细丝的机理，使得可以检测到包括可除去细丝的存储器单元的逻辑状态。 描述了附加装置，系统和方法。

公开(公告)号：US09269899B1

公开(公告)日：2016-02-23

申请号：US14615188

申请日：2015-02-05

Applicant: Micron Technology, Inc.

Inventor： Kamal M. Karda ,  Marko Milojevic ,  David H. Wells ,  F. Daniel Gealy

IPC: G11C5/12 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L45/126 ,  G11C5/12 ,  G11C11/221 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

Abstract: An electronic device includes two conductive electrodes. A first current path extends from one of the electrodes to the other and has a dominant thermally activated conduction activation energy of 0.5 eV to 3.0 eV. A second current path extends from the one electrode to the other and is circuit-parallel the first current path. The second current path exhibits a minimum 100-times increase in electrical conductivity for increasing temperature within a temperature range of no more than 50° C. between 300° C. and 800° C. and exhibits a minimum 100-times decrease in electrical conductivity for decreasing temperature within the 50° C. temperature range. Other embodiments are disclosed.

Abstract translation: 电子设备包括两个导电电极。 第一电流路径从一个电极延伸到另一个电极，并且具有0.5eV至3.0eV的显性热激活传导激活能。 第二电流路径从一个电极延伸到另一个电极并且与第一电流路径电路并联。 在300℃和800℃之间，在不超过50℃的温度范围内增加温度，第二电流路径的电导率最小提高100倍，并且电导率最小降低100倍 用于在50°C温度范围内降低温度。 公开了其他实施例。

公开(公告)号：US20140339491A1

公开(公告)日：2014-11-20

申请号：US14451179

申请日：2014-08-04

Applicant: Micron Technology, Inc.

Inventor： Lei Bi ,  Beth R. Cook ,  Marko Milojevic ,  Durai Vishak Nirmal Ramaswamy

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/08 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0035 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/35 ,  H01L27/2463 ,  H01L45/145

Abstract: Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.

Abstract translation: 描述了包括丝状记忆单元的装置，装置，系统和方法。 描述了基本上去除装置中的长丝的机构，使得可以检测到包括可去除细丝的存储单元的逻辑状态。 描述了附加装置，系统和方法。

公开(公告)号：US12113019B2

公开(公告)日：2024-10-08

申请号：US18148662

申请日：2022-12-30

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Jordan D. Greenlee ,  Marko Milojevic

IPC: H01L23/522 ,  H01L21/762 ,  H01L23/532 ,  H01L27/146 ,  H04N21/21 ,  H04N21/422 ,  H10B41/27 ,  H10B41/30 ,  H10B41/35 ,  H10N70/00

CPC classification number: H01L23/53209 ,  H01L21/76264 ,  H01L23/5226 ,  H01L27/14636 ,  H04N21/21 ,  H04N21/4222 ,  H10B41/27 ,  H10B41/30 ,  H10B41/35 ,  H10N70/826 ,  H01H2231/002

Abstract: A microelectronic device comprises pillar structures extending vertically through an isolation material, conductive lines electrically coupled to the pillar structures, contact structures between the pillar structures and the conductive lines, and interconnect structures between the conductive lines and the contact structures. The conductive lines comprise one or more of titanium, ruthenium, aluminum, and molybdenum. The interconnect structures comprise a material composition that is different than one or more of a material composition of the contact structures and a material composition of the conductive lines. Related memory devices, electronic systems, and methods are also described.