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1.发明授权Method and apparatus for fabricating semiconductor device with photodiode 失效用于制造具有光电二极管的半导体器件的方法和装置
公开(公告)号：US5747860A
公开(公告)日：1998-05-05
申请号：US613077
申请日：1996-03-08
IPC分类号： G02B6/42 , H01L31/0232 , H01L31/0352 , H01L31/103 , H01L31/18
CPC分类号： B82Y20/00 , G02B6/42 , G02B6/4212 , G02B6/423 , H01L31/0232 , H01L31/035254 , H01L31/103 , H01L31/1812 , G02B6/4239 , Y02E10/50
摘要： On a surface of a silicon substrate, N.sup.+ type buried layer and N-type epitaxial layer are formed in order, and an isolation layer reaching the silicon substrate from the surface of the N-type epitaxial layer is formed to define a photodiode. In the surface of the photodiode, a rectangular recess is selectively formed toward inside of the N-type epitaxial layer. On the side face of the recess, a silicon oxide layer is formed. In the region surrounded by the silicon oxide layer, a photo absorbing layer and so forth is formed. On the other hand, in an optical waveguide, a LOCOS oxide layer is formed toward inside from the surface of the N-type epitaxial layer. The N-type epitaxial layer is sandwiched between the LOCOS oxide layer and the N.sup.+ type buried layer. The refraction indexes of the LOCOS oxide layer and the N.sup.+ type buried layer are smaller than that of the N-type epitaxial layer. Thus, the N-type epitaxial layer serves as an optical passage to efficiently introduce a light beam into the photo absorbing layer of the photodiode.
摘要翻译： 在硅衬底的表面上依次形成N +型掩埋层和N型外延层，并且形成从N型外延层的表面到达硅衬底的隔离层以限定光电二极管。 在光电二极管的表面上，朝向N型外延层的内侧选择性地形成矩形凹部。 在凹部的侧面上形成氧化硅层。 在由氧化硅层包围的区域中，形成光吸收层等。 另一方面，在光波导中，从N型外延层的表面向内侧形成LOCOS氧化物层。 N型外延层夹在LOCOS氧化物层和N +型掩埋层之间。 LOCOS氧化物层和N +型掩埋层的折射率小于N型外延层的折射率。 因此，N型外延层用作有效地将光束引入到光电二极管的光吸收层中的光通路。
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2.发明授权
公开(公告)号：US5296391A
公开(公告)日：1994-03-22
申请号：US67017
申请日：1993-05-26
IPC分类号： H01L21/331 , H01L29/732 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66287 , H01L29/66242 , H01L29/732 , H01L29/7378 , Y10S148/01
摘要： A method of manufacturing a semiconductor device includes a monocrystalline semiconductor layer of one conductivity type with a first insulating film covering the semiconductor layer. An aperture is selectively formed in the first insulating film to expose a part of the semiconductor layer. A first polycrystalline semiconductor film of an opposite conductivity type is formed on the first insulating film and has an overhang portion projecting over the aperture from an edge of the first insulating film defining the aperture. A second polycrystalline semiconductor film and a monocrystalline semiconductor film of the opposite conductivity type are grown simultaneously on a bottom surface of the overhang portion of the first polycrystalline semiconductor film and on the part of the monocrystalline semiconductor layer respectively until monocrystalline semiconductor film is in contact with the second polycrystalline semiconductor film, with a second insulating film selectively formed on the monocrystalline semiconductor film with leaving a part thereof to be exposed.
摘要翻译： 半导体器件的制造方法包括具有覆盖半导体层的第一绝缘膜的一种导电型单晶半导体层。 在第一绝缘膜中选择性地形成孔径以暴露半导体层的一部分。 具有相反导电型的第一多晶半导体膜形成在第一绝缘膜上，并且具有从限定孔的第一绝缘膜的边缘在孔上突出的突出部分。 在第一多晶半导体膜的突出部分的底表面和单晶半导体层的一部分上同时生长具有相反导电类型的第二多晶半导体膜和单晶半导体膜，直到单晶半导体膜与 所述第二多晶半导体膜具有选择性地形成在所述单晶半导体膜上并使其一部分露出的第二绝缘膜。
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公开(公告)号：US6080600A
公开(公告)日：2000-06-27
申请号：US20253
申请日：1998-02-06
IPC分类号： H01L31/10 , H01L31/0352 , H01L31/103 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/035281 , H01L31/03529 , H01L31/103 , Y02E10/547
摘要： It is the object of the invention to suppress the leakage current of a semiconductor photodiode. A trench, a side wall of which is covered with and insulating layer, is formed on the surface of a semiconductor substrate of the first conductivity type. Then, an epitaxial layer of the second conductivity type is grown in the trench, where a PN-junction is constructed between the bottom surface of the epitaxial layer and the semiconductor substrate. An impurity diffusion layer of the second conductivity type with higher impurity concentration than that of an internal portion of the epitaxial semiconductor layer is formed over the side surface of the epitaxial layer of the second conductivity type. In the aforementioned structure, when a reverse bias voltage is applied to the PN-junction, a depletion layer does not extend to a neighborhood of the insulating layer, and a leakage current, which flows via surface states near the insulating layer.
摘要翻译： 本发明的目的是抑制半导体光电二极管的漏电流。 在第一导电类型的半导体衬底的表面上形成有覆盖有绝缘层的侧壁的沟槽。 然后，在沟槽中生长第二导电类型的外延层，其中在外延层的底表面和半导体衬底之间构造PN结。 在第二导电类型的外延层的侧表面上形成杂质浓度高于外延半导体层的内部部分的第二导电类型的杂质扩散层。 在上述结构中，当向PN结施加反向偏置电压时，耗尽层不会延伸到绝缘层的附近以及在绝缘层附近经由表面状态流动的漏电流。
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公开(公告)号：US5731622A
公开(公告)日：1998-03-24
申请号：US805224
申请日：1997-02-24
IPC分类号： H01L31/10 , H01L31/0352 , H01L31/103 , H01L31/18 , H01L31/00
CPC分类号： H01L31/1804 , H01L31/035281 , H01L31/03529 , H01L31/103 , Y02E10/547
摘要： It is the object of the invention to suppress the leakage current of a semiconductor photodiode. A trench, a side wall of which is covered with and insulating layer, is formed on the surface of a semiconductor substrate of the first conductivity type. Then, an epitaxial layer of the second conductivity type is grown in the trench, where a PN-junction is constructed between the bottom surface of the epitaxial layer and the semiconductor substrate. An impurity diffusion layer of the second conductivity type with higher impurity concentration than that of an internal portion of the epitaxial semiconductor layer is formed over the side surface of the epitaxial layer of the second conductivity type. In the aforementioned structure, when a reverse bias voltage is applied to the PN-junction, a depletion layer does not extend to a neighborhood of the insulating layer, and a leakage current, which flows via surface states near the insulating layer.
摘要翻译： 本发明的目的是抑制半导体光电二极管的漏电流。 在第一导电类型的半导体衬底的表面上形成有覆盖有绝缘层的侧壁的沟槽。 然后，在沟槽中生长第二导电类型的外延层，其中在外延层的底表面和半导体衬底之间构造PN结。 在第二导电类型的外延层的侧表面上形成杂质浓度高于外延半导体层的内部部分的第二导电类型的杂质扩散层。 在上述结构中，当向PN结施加反向偏置电压时，耗尽层不会延伸到绝缘层的附近以及在绝缘层附近经由表面状态流动的漏电流。
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公开(公告)号：US20050059370A1
公开(公告)日：2005-03-17
申请号：US10884078
申请日：2004-07-02
摘要： In a broadcast receiving system, a first antenna receives a broadcast signal of a first frequency band and a second antenna receives a signal of a second frequency band different from the first frequency band. A frequency conversion unit converts the signal of the second frequency band into a second signal of the first frequency band. A selection unit selects one of the broadcast signal output from the first antenna and the second signal output from the frequency conversion unit. A demodulation unit demodulates the one of the broadcast signal and the second signal selected by the selection unit.
摘要翻译： 在广播接收系统中，第一天线接收第一频带的广播信号，第二天线接收与第一频带不同的第二频带的信号。 频率转换单元将第二频带的信号转换为第一频带的第二信号。 选择单元选择从第一天线输出的广播信号和从频率转换单元输出的第二信号之一。 解调单元解调由选择单元选择的广播信号和第二信号之一。
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公开(公告)号：US5637513A
公开(公告)日：1997-06-10
申请号：US499493
申请日：1995-07-07
申请人： Mitsuhiro Sugiyama
发明人： Mitsuhiro Sugiyama
IPC分类号： H01L21/331 , H01L29/73 , H01L21/265
CPC分类号： H01L29/66265 , H01L29/7317
摘要： A fabrication method of a semiconductor device that can realize a semiconductor device having an improved radiation performance of heat together with a low parasitic capacitance between a semiconductor substrate and a conductor of the device. An SOI structure having a single-crystal silicon layer formed on an insulating substructure is prepared and then, device regions are formed on the substructure by using the single-crystal silicon layer. Sidewall insulators are formed to cover side faces of the respective device regions, laterally isolating the device regions from each other. A resistive silicon layer is formed on a non-device region of the substructure. The resistive silicon layer has a resistivity or specific resistance greater than that of the device regions. Electronic elements are formed in the device regions. The resistive silicon layer may be made of polysilicon or single-crystal silicon.
摘要翻译： 一种半导体器件的制造方法，其可以实现具有改善的放射性能的半导体器件以及半导体衬底和器件的导体之间的低寄生电容。 制备在绝缘子结构上形成单晶硅层的SOI结构，然后通过使用单晶硅层在子结构上形成器件区。 形成侧壁绝缘体以覆盖相应的器件区域的侧面，从而将器件区域彼此侧向隔离。 电阻硅层形成在子结构的非器件区域上。 电阻硅层的电阻率或电阻率大于器件区域的电阻率或电阻率。 电子元件形成在器件区域中。 电阻硅层可以由多晶硅或单晶硅制成。
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公开(公告)号：US5451541A
公开(公告)日：1995-09-19
申请号：US340595
申请日：1994-11-16
申请人： Mitsuhiro Sugiyama
发明人： Mitsuhiro Sugiyama
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/762 , H01L27/12 , H01L21/20
CPC分类号： H01L22/12
摘要： An insulating film is provided on a single crystal silicon layer of a SOI substrate, and a first groove for device isolation and a second groove for thickness measurement are formed to expose a surface of a silicon substrate of the SOI substrate. Then, the first and second grooves are filled with a filling film, and the filling film is etched back, so that the first groove is still filled with the filling film, while the filling film which have filled the second groove is removed to expose the surface of the silicon substrate, because the second groove has a width larger than that of the first groove.
摘要翻译： 在SOI衬底的单晶硅层上设置绝缘膜，形成用于器件隔离的第一沟槽和用于厚度测量的第二沟槽，以暴露SOI衬底的硅衬底的表面。 然后，第一和第二槽填充有填充膜，并且填充膜被回蚀刻，使得第一凹槽仍然填充有填充膜，同时去除填充第二凹槽的填充膜以暴露 因为第二槽的宽度大于第一槽的宽度。
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公开(公告)号：US08848138B2
公开(公告)日：2014-09-30
申请号：US13116048
申请日：2011-05-26
IPC分类号： G02F1/1335 , F21V8/00
CPC分类号： G02B6/003 , G02B6/0016 , G02B6/0028 , G02B6/0038 , G02B6/0068 , G02F1/133514 , G02F1/133524 , G02F1/133603 , G02F1/133615 , G02F1/1368
摘要： Provided is a liquid crystal display device includes an optical switching member; a light guide plate made of a thermoplastic material, which includes at least one light introducing portion on at least one side surface thereof; and a light source disposed on the at least one side surface, in which: the at least one light introducing portion includes, in plan view of the light guide plate: a first portion extending from a light incident surface, which is an end surface of the at least one light introducing portion, while keeping a substantially constant width; and a second portion, which extends from the first portion and has a form which widens; and at least the second portion is connected to a front surface of the light guide plate through an inclined surface which is smoothly continuous with the front surface of the light guide plate.
摘要翻译： 提供一种液晶显示装置，包括光开关元件; 由热塑性材料制成的导光板，其在至少一个侧表面上包括至少一个光引入部分; 以及设置在所述至少一个侧表面上的光源，其中：所述至少一个光导入部在所述导光板的平面图中包括从作为所述导光板的端面的光入射面延伸的第一部分 所述至少一个光导入部保持基本恒定的宽度; 以及第二部分，其从第一部分延伸并且具有变宽的形式; 并且至少第二部分通过与导光板的前表面平滑连续的倾斜表面连接到导光板的前表面。
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公开(公告)号：US06417610B1
公开(公告)日：2002-07-09
申请号：US09572374
申请日：2000-05-18
IPC分类号： H01J2950
CPC分类号： H01J29/503 , H01J29/485 , H01J2229/4875
摘要： A color cathode ray has an electron gun which includes three cathodes for emitting three in-line electron beams and a plurality of electrodes fixed in a predetermined axially spaced relationship on insulating supports. At least one of the plurality of electrodes is cup-shaped and has a correction electrode therein, and edges of the correction electrode are formed with recesses and sloped portions. A distance L from a mouth of each of the recesses of the correction electrode to an inner wall of the at least one of the plurality of electrodes satisfies the following relationship: L′≦L≦15 &mgr;m, where L′ is a height of a burr caused in press-forming of the recesses.
摘要翻译： 彩色阴极射线具有电子枪，其包括用于发射三个一字形电子束的三个阴极和在绝缘支撑件上以预定的轴向间隔关系固定的多个电极。 多个电极中的至少一个是杯形的并且其中具有校正电极，并且校正电极的边缘形成有凹陷部分和倾斜部分。 从校正电极的每个凹部的口部到多个电极中的至少一个电极的内壁的距离L满足以下关系：L'<= L <=15μm，其中L'是高度 在凹部的压制成型中引起的毛刺。
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公开(公告)号：US06353281B2
公开(公告)日：2002-03-05
申请号：US09833558
申请日：2001-04-13
IPC分类号： H01J2950
CPC分类号： H01J29/503
摘要： A color cathode ray tube including a panel section having a phosphor layer formed on an internal surface thereof, a neck portion having an electron gun assembly for emission of three electron beams therein, and a funnel section connecting the panel section and the neck portion. The electron gun assembly includes three cathodes and a plurality of grid electrodes disposed along a tube axis. The grid electrodes includes at least one plate-shaped electrode which has a fixed support structure. The plate-shaped electrode has three bulged portions along an electron beam passage, a first electron beam passage hole being formed in a respective bulged portion and a second electron beam passage being hole formed in a top face portion of a respective bulge portion. A diameter of the first electron beam passage hole is greater than a diameter of the second electron beam passage hole.
摘要翻译： 一种彩色阴极射线管，包括具有在其内表面上形成的荧光体层的面板部分，具有用于在其中发射三束电子束的电子枪组件的颈部和连接该面板部分和颈部的漏斗部分。 电子枪组件包括三个阴极和沿管轴设置的多个栅电极。 栅极包括至少一个具有固定支撑结构的板状电极。 板状电极沿着电子束通道具有三个凸出部分，第一电子束通孔形成在相应凸出部分中，第二电子束通道形成在相应凸起部分的顶面部分中。 第一电子束通过孔的直径大于第二电子束通过孔的直径。
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