公开(公告)号：US5127365A

公开(公告)日：1992-07-07

申请号：US659274

申请日：1991-02-22

申请人： Mitsutoshi Koyama ,  Koichi Takahashi ,  Hironori Sonobe

发明人： Mitsutoshi Koyama ,  Koichi Takahashi ,  Hironori Sonobe

IPC分类号： H01L21/205 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31

CPC分类号： H01L21/67115

摘要： A heat-treatment apparatus includes a quartz heat-treatment tube having a vertically set axis in which a heat-treatment gas is supplied from its lower portion, and a quartz cap to be mounted on an upper opening portion of the heat-treatment tube. An opening is formed in a central portion of the cap, a quartz rod is inserted through the opening along the axis of the heat-treatment tube, and semiconductor parts to be heat-treated are held by the rod. A first exhaust duct is formed in a side surface of the heat-treatment tube at a position higher than at least the semiconductor parts held by the rod and exhausts the heat-treatment gas in the heat-treatment tube. A ring-like chamber open toward the inner surface of the cap is formed in the outer circumferential surface of the heat-treatment tube in a position close to the upper opening surface, and a second exhaust duct communicates with this chamber. The chamber communicates with the opening portion formed in the cap in the outer circumferential portion of the rod and communicates with the interior of the heat-treatment tube, thereby exhausting an external air drawn from the opening together with the heat-treatment gas in the heat-treatment tube.

摘要翻译： 热处理装置包括：石英热处理管，其具有从其下部供给热处理气体的竖直设定轴;以及石英盖，安装在所述热处理管的上开口部。 在盖的中央部形成有开口部，沿着热处理管的轴线将石英棒贯穿该开口部，通过该杆保持被热处理的半导体部件。 第一排气管在热处理管的侧表面形成在比由杆保持的至少半导体部分高的位置，并排出热处理管中的热处理气体。 在靠近上开口表面的位置，在热处理管的外周面上形成有朝向盖的内表面开口的环状室，第二排气管与该室连通。 该室与杆的外周部形成的开口部连通，与热处理管的内部连通，从而将与开口一起从外部吸入的外部空气与热处理气体一起排出 处理管。

公开(公告)号：US5111272A

公开(公告)日：1992-05-05

申请号：US651988

申请日：1991-02-07

申请人： Naoto Miyashita ,  Koichi Takahashi ,  Hironori Sonobe ,  Mitsutoshi Koyama

发明人： Naoto Miyashita ,  Koichi Takahashi ,  Hironori Sonobe ,  Mitsutoshi Koyama

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/732

CPC分类号： H01L21/76264 ,  H01L21/76235 ,  H01L21/76286

摘要： A semiconductor device of this invention is characterized in that one element region is electrically isolated from another element region adjacent thereto by forming a groove surrounding the one element region and a distance between the groove surrounding one element region and a groove surrounding the another element region is set to be equal to or larger than 3 .mu.m.

公开(公告)号：US5589421A

公开(公告)日：1996-12-31

申请号：US300067

申请日：1994-09-01

申请人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama ,  Shinji Nunotani ,  Satoshi Yanagiya ,  Yoshiro Baba

发明人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama ,  Shinji Nunotani ,  Satoshi Yanagiya ,  Yoshiro Baba

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/46 ,  C23C16/54 ,  C30B25/10 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31 ,  H01L21/331 ,  H01L29/73 ,  H01L21/302 ,  H01L21/463

CPC分类号： H01L21/67115 ,  C23C16/44 ,  C23C16/54 ,  C30B25/10 ,  Y10S438/906

摘要： A chemical vapor deposition apparatus comprises a reaction chamber for annealing a silicon wafer, a transportation mechanism for transporting the silicon wafer to the reaction chamber, a detecting device for detecting temperature of the reaction chamber, and an operation control device for receiving signals corresponding to the temperature of the reaction chamber, and supplying to the transportation mechanism, other signals for preventing the silicon wafer from being transported when the temperature is 100.degree. C. or more.

摘要翻译： 化学气相沉积装置包括用于退火硅晶片的反应室，用于将硅晶片输送到反应室的输送机构，用于检测反应室温度的检测装置，以及用于接收对应于该反应室的信号的操作控制装置 反应室的温度，并向输送机构供给在温度为100℃以上时防止硅晶片输送的其他信号。

公开(公告)号：US5380399A

公开(公告)日：1995-01-10

申请号：US120436

申请日：1993-09-14

申请人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama

发明人： Naoto Miyashita ,  Koichi Takahashi ,  Mitsutoshi Koyama

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/31 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/02046

摘要： To heat treat a semiconductor substrate without forming an oxide film on the surface thereof, the method of heat treating a semiconductor substrate, comprises: a step 1 of carrying a semiconductor substrate into a heat treating chamber heated at a temperature 150.degree. C. or lower; a step 2 of heating the heat treating chamber up to about 200.degree. C. to emit moisture adhering to the semiconductor substrate; a step 3 of introducing an etching gas into the heat treating chamber to etch an oxide film formed on the surface of the semiconductor substrate; and a step 4 of raising the temperature within the heat treating chamber up to a heat treating temperature to heat treat the semiconductor substrate.

摘要翻译： 为了在其表面上不形成氧化膜来热处理半导体衬底，对半导体衬底进行热处理的方法包括：将半导体衬底承载在加热到150℃或更低温度的热处理室中的步骤1 ; 将热处理室加热至约200℃的步骤2，以发出附着在半导体基板上的水分; 将蚀刻气体引入到所述热处理室中以蚀刻形成在所述半导体衬底的表面上的氧化膜的步骤3; 以及将热处理室内的温度升高至热处理温度以热处理半导体衬底的步骤4。

公开(公告)号：US06812136B2

公开(公告)日：2004-11-02

申请号：US09799674

申请日：2001-03-07

申请人： Mitsutoshi Koyama ,  Toshio Shimizu ,  Takeshi Kubota

发明人： Mitsutoshi Koyama ,  Toshio Shimizu ,  Takeshi Kubota

IPC分类号： H01L214763

CPC分类号： H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to the present invention, when a wiring layer using copper is formed, an interlayer insulation film is formed on a semiconductor substrate having a conductive portion of an element. A contact hole, which is connected to at least the conductive portion, is formed in the interlayer insulation film. A wiring groove is formed in the surface of the interlayer insulation film including a region where the contact hole is formed. A barrier metal having a tungsten carbide film on its surface is formed on the surface of the interlayer insulation film and in the wiring groove and contact hole in contact with the conductive portion. A copper film is then formed on the barrier metal in contact with the tungsten carbide film. After that, the contact hole and wiring groove are completely filled with the copper film by heat treatment. An excess portion is removed from the copper film except in the contact hole and wiring groove thereby to form a copper buried wiring layer. Thus, the copper film is formed in contact with the tungsten carbide film and the wettability of copper to the barrier metal is improved, accordingly, the copper wiring layer can be increased in reliability.

公开(公告)号：US5189503A

公开(公告)日：1993-02-23

申请号：US683132

申请日：1991-04-10

申请人： Kyoichi Suguro ,  Keitaro Imai ,  Mitsutoshi Koyama ,  Kikuo Yamabe

发明人： Kyoichi Suguro ,  Keitaro Imai ,  Mitsutoshi Koyama ,  Kikuo Yamabe

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L27/108 ,  H01L29/92

CPC分类号： H01L27/10808 ,  H01L28/40 ,  H01L21/31604

摘要： A dielectric insulation film consists of a metal oxide and pieces of dissimilar metal element added to the metal oxide. A positive charge number under an ionized state of the dissimilar metal element is smaller by one than that of the metal oxide. An ionic charge number of the dissimilar metal element is of a predetermined one kind. The dielectric insulation film is formed as an insulation film of capacitor of each cell of a semiconductor device according to a chemical vapor deposition (CVD) method in the process of forming cells of the semiconductor device.

摘要翻译： 介电绝缘膜由金属氧化物和添加到金属氧化物中的异种金属元素组成。 异种金属元素的离子化状态下的正电荷数小于金属氧化物的正电荷数。 异种金属元素的离子电荷数是预定的一种。 在形成半导体器件的电池的工艺中，根据化学气相沉积（CVD）方法，将介电绝缘膜形成为半导体器件的每个电池的电容器的绝缘膜。

公开(公告)号：US5990008A

公开(公告)日：1999-11-23

申请号：US934751

申请日：1997-09-22

申请人： Mitsutoshi Koyama ,  Takeshi Kubota

发明人： Mitsutoshi Koyama ,  Takeshi Kubota

IPC分类号： H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76844 ,  H01L21/76843 ,  H01L21/76877

摘要： In a method for forming a high aspect ratio structure using copper in an ultra high-speed device, the degree of copper burying is heightened. A high aspect ratio structure, such as a fine connecting hole, is formed in a layer insulating film on a silicon substrate. Then, after a CVD-TiN film is formed to have a thickness of 10 nm on the insulating film, a copper film having a thickness of 1 .mu.m is formed. In this case, the highly pure copper film is formed by controlling film-forming conditions so as to set oxygen and sulfur concentrations in the film equal to a fixed level or lower. Thus, during its burying in the connecting hole, the surface diffusibility and fluidity of the copper film heated by means of laser irradiation are facilitated.

摘要翻译： 在超高速装置中使用铜形成高纵横比结构的方法中，铜埋入的程度提高。 在硅衬底上的层绝缘膜中形成诸如细连接孔的高纵横比结构。 然后，在绝缘膜上形成厚度为10nm的CVD-TiN膜之后，形成厚度为1μm的铜膜。 在这种情况下，通过控制成膜条件以使膜中的氧和硫浓度等于或等于固定水平而形成高纯度铜膜。 因此，在连接孔埋入时，通过激光照射加热的铜膜的表面扩散性和流动性变得容易。

公开(公告)号：US4485000A

公开(公告)日：1984-11-27

申请号：US603683

申请日：1984-04-25

申请人： Tatsuzo Kawaguchi ,  Mitsutoshi Koyama

发明人： Tatsuzo Kawaguchi ,  Mitsutoshi Koyama

IPC分类号： C23C14/50 ,  C23C14/34 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  H01L21/31 ,  C23C15/00

CPC分类号： H01J37/3423 ,  C23C14/3407 ,  H01J37/34 ,  H01J37/3429

摘要： In a sputtering target supporting device for fixing, to a common electrode, a plurality of beams forming a mosaic target used for co-sputtering, at least one pressing mechanism is provided exclusively for each of the beams to press the respective beam against the common electrode by means of the respective pressing mechanism provided therefor.

摘要翻译： 在用于将公共电极固定到形成用于共溅射的镶嵌目标的多个光束的溅射靶支撑装置中，仅为每个光束提供至少一个按压机构，以将各个光束压在公共电极上 借助于其设置的相应的按压机构。

公开(公告)号：US06424045B2

公开(公告)日：2002-07-23

申请号：US09409436

申请日：1999-09-30

申请人： Mitsutoshi Koyama ,  Takeshi Kubota

发明人： Mitsutoshi Koyama ,  Takeshi Kubota

IPC分类号： H01L2348

CPC分类号： H01L21/76844 ,  H01L21/76843 ,  H01L21/76877

摘要： In a method for forming a high aspect ratio structure using copper in an ultra high-speed device, the degree of copper burying is heightened. A high aspect ratio structure, such as a fine connecting hole, is formed in a layer insulating film on a silicon substrate. Then, after a CVD-TiN film is formed to have a thickness of 10 nm on the insulating film, a copper film having a thickness of 1 &mgr;g m is formed. In this case, the highly pure copper film is formed by controlling film-forming conditions so as to set oxygen and sulfur concentrations in the film equal to a fixed level or lower. Thus, during its burying in the connecting hole, the surface diffusibility and fluidity of the copper film heated by means of laser irradiation are facilitated.

摘要翻译： 在超高速装置中使用铜形成高纵横比结构的方法中，铜埋入的程度提高。 在硅衬底上的层绝缘膜中形成诸如细连接孔的高纵横比结构。 然后，在绝缘膜上形成厚度为10nm的CVD-TiN膜之后，形成厚度为1μm的铜膜。 在这种情况下，通过控制成膜条件以使膜中的氧和硫浓度等于或等于固定水平而形成高纯度铜膜。 因此，在连接孔埋入时，通过激光照射加热的铜膜的表面扩散性和流动性变得容易。