公开(公告)号：US20130214320A1

公开(公告)日：2013-08-22

申请号：US13772562

申请日：2013-02-21

Applicant: NICHIA CORPORATION

Inventor： Masahiko ONISHI ,  Shun KITAHAMA

IPC: H01L33/40 ,  H01L33/38

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

公开(公告)号：US20240213298A1

公开(公告)日：2024-06-27

申请号：US18536867

申请日：2023-12-12

Applicant: NICHIA CORPORATION

Inventor： Yoshinori FUKUI ,  Shun KITAHAMA ,  Yoshiki INOUE

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light emitting element includes: a first semiconductor layer; light emitting cells disposed on the first semiconductor layer, each including: an active layer, and a second semiconductor layer disposed on the active layer, wherein the light emitting cells include a first light emitting cell positioned in a center, and a plurality of second light emitting cells positioned around the first light emitting cell; a first insulation layer having a first opening provided above the first semiconductor layer located outward from the second light emitting cells and a plurality of second openings located above each second semiconductor layer; a first electrode disposed on the first insulation layer and electrically connected to the first semiconductor layer at the first opening; and a plurality of second electrodes, each positioned on and electrically connected to a respective one of the second semiconductor layers at a respective one of the second openings.

公开(公告)号：US20160240742A1

公开(公告)日：2016-08-18

申请号：US15141164

申请日：2016-04-28

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Keiji EMURA ,  Shinichi DAIKOKU

IPC: H01L33/42 ,  H01L33/32 ,  H01L33/46

CPC classification number: H01L33/42 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

公开(公告)号：US20200321492A1

公开(公告)日：2020-10-08

申请号：US16808577

申请日：2020-03-04

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/42

Abstract: A light-emitting element includes: a semiconductor stacked body; an insulating film located on a p-type semiconductor layer; a p-side electrode located on the insulating film, the p-side electrode comprising a pad portion and an extension portion, the extension portion being continuous with the pad portion in a first direction; a light-transmissive conductive film located on the p-type semiconductor layer and on the insulating film, the light-transmissive conductive film having an opening that is continuous along the extension portion on the insulating film; and a reflective film located between the insulating film and the p-side electrode in the opening. The opening includes a first opening and a second opening. In the second direction, the light-transmissive conductive film is electrically connected to the extension portion of the p-side electrode at a portion adjacent to a region where the first opening is located.

公开(公告)号：US20160254413A1

公开(公告)日：2016-09-01

申请号：US15045680

申请日：2016-02-17

Applicant: NICHIA CORPORATION

Inventor： Keiji EMURA ,  Shun KITAHAMA ,  Yasuo MIYOSHI

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/24

CPC classification number: H01L33/387 ,  H01L33/24 ,  H01L33/38 ,  H01L33/382 ,  H01L33/62

Abstract: A light emitting element includes a semiconductor layer which is in a planar shape of a polygon at least of a pentagon, a second electrode provided on the semiconductor layer, and a first electrode provided on the semiconductor layer and having a first pad portion, a first extension portion that extends from the first pad portion along an imaginary circle to which the first pad portion is tangent on the inside and whose center is at the same location as center of gravity of the polygon shape, and a second extension portion that extends along the imaginary circle from the first pad portion on the opposite side from the first extension portion.

Abstract translation: 发光元件包括半导体层，其至少为五边形的多边形的平面形状，设置在半导体层上的第二电极和设置在半导体层上的第一电极，并具有第一焊盘部分，第一焊盘部分 延伸部，其从所述第一焊盘部沿着假想圆延伸，所述第一焊盘部与所述第一焊盘部的内侧相切，并且所述第一焊盘部的中心与所述多边形的重心位于相同的位置;以及第二延伸部， 与第一延伸部相反一侧的第一焊盘部分的假想圆。

公开(公告)号：US20160240757A1

公开(公告)日：2016-08-18

申请号：US15041921

申请日：2016-02-11

Applicant: NICHIA CORPORATION

Inventor： Shinichi DAIKOKU ,  Shun KITAHAMA ,  Keiji EMURA ,  Akihiro NAKAMURA

IPC: H01L33/62 ,  H01L33/38

CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/42

Abstract: A light-emitting element includes a semiconductor stacked body, a light transmissive conductive film disposed on the semiconductor stacked body, the light transmissive conductive film including a plurality of through holes, insulation films disposed in the plurality of through holes, the plurality of through holes being disposed on the semiconductor stacked body; and a pad electrode disposed on the light transmissive conductive film and the insulation films.

Abstract translation: 发光元件包括半导体层叠体，设置在半导体层叠体上的透光导电膜，透光导电膜包括多个通孔，设置在多个通孔中的绝缘膜，多个通孔 设置在半导体堆叠体上; 以及设置在透光导电膜和绝缘膜上的焊盘电极。

公开(公告)号：US20240097075A1

公开(公告)日：2024-03-21

申请号：US18464375

申请日：2023-09-11

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA

IPC: H01L33/44 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L33/20 ,  H01L2933/0025

Abstract: A method for manufacturing a light-emitting element includes: preparing a semiconductor structure body that includes: an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, where the n-side layer includes a plurality of first regions arranged in a first direction in a top view, the first regions exposed from the active layer and the p-side layer; forming a first insulating film on the p-side layer, between the first regions; forming a second insulating film to continuously cover the first regions, the p-side layer, and the first insulating film; forming an n-side opening in the second insulating film by removing the second insulating film on the first regions and on the first insulating film; and forming an n-side electrode in the n-side opening, the n-side electrode contacting the first regions and the first insulating film.

公开(公告)号：US20220077365A1

公开(公告)日：2022-03-10

申请号：US17466680

申请日：2021-09-03

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yusuke MINATO

IPC: H01L33/60 ,  H01L33/38

Abstract: A light-emitting element includes: a semiconductor layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer located between the first semiconductor layer and the second semiconductor layer; a reflective portion including an insulative first layer located on the first semiconductor layer, a second layer made of a metal material located on the first layer, and a third layer located on the second layer; an insulative layer covering the reflective portion; a light-transmissive conductive layer located on the insulative layer and on the first semiconductor layer; a first electrode located on a portion of the light-transmissive conductive layer that is above the reflective portion; and a second electrode located on the second semiconductor layer.

公开(公告)号：US20210296526A1

公开(公告)日：2021-09-23

申请号：US17338446

申请日：2021-06-03

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US20200075797A1

公开(公告)日：2020-03-05

申请号：US16677287

申请日：2019-11-07

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.