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    Liquid crystal on silicon device mirror metal process
    1.
    发明授权
    Liquid crystal on silicon device mirror metal process 有权

    公开(公告)号：US10739646B1

    公开(公告)日：2020-08-11

    申请号：US16399373

    申请日：2019-04-30

    Applicant: OmniVision Technologies, Inc.

    Inventor： Ming Zhang ,  Yin Qian ,  Libo Weng ,  Dyson H. Tai ,  Chia-Ying Liu ,  Chia-Jung Liu

    IPC: G02F1/1337 ,  G02F1/1335 ,  G02F1/1362

    Abstract: A reflective semiconductor device includes integrated circuitry disposed in a semiconductor layer. A first plurality of mirrors is formed in a mirror layer over the semiconductor layer, and each of the first plurality of mirrors is spaced apart from one another by at least a uniform width. A thin dielectric film layer covers sidewalls of the first plurality of mirrors and the semiconductor layer in the regions between the spaced apart first plurality of mirrors. A second plurality of mirrors are formed in the mirror layer between the thin dielectric film layer covered sidewalls of the first plurality of mirrors and over the thin dielectric film layer covering the semiconductor layer. Each one of the first and second plurality of mirrors has the uniform width, and is coupled to the integrated circuitry disposed in the semiconductor layer.

    PHOTOSENSITIVE CAPACITOR PIXEL FOR IMAGE SENSOR
    5.
    发明申请
    PHOTOSENSITIVE CAPACITOR PIXEL FOR IMAGE SENSOR 有权
    用于图像传感器的感光电容像素

    公开(公告)号：US20160276380A1

    公开(公告)日：2016-09-22

    申请号：US14662655

    申请日：2015-03-19

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Wu-Zang Yang ,  Chia-Ying Liu ,  Chih-Wei Hsiung ,  Chun-Yung Ai ,  Dyson H. Tai ,  Dominic Massetti

    IPC: H01L27/146

    CPC classification number: H01L27/14692 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L28/55 ,  H01L28/56 ,  H01L28/90

    Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.

    Abstract translation: 公开了一种图像传感器像素和图像传感器及其制造方法。 图像像素包括光敏电容器和晶体管网络。 感光电容器包括电极，导电层，电介质层和光敏半导体材料。 导电层设置在电极周围，并且介电层形成在导电层和电极之间。 感光半导体材料用于响应于图像光产生图像信号，并且设置在电介质层和电极之间。 晶体管网络被耦合以从光敏电容器的电极读出图像信号。

    SELF-ALIGNED ISOLATION STRUCTURES AND LIGHT FILTERS
    6.
    发明申请
    SELF-ALIGNED ISOLATION STRUCTURES AND LIGHT FILTERS 有权
    自对准隔离结构和光过滤器

    公开(公告)号：US20160099266A1

    公开(公告)日：2016-04-07

    申请号：US14505923

    申请日：2014-10-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

    Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

    Abstract translation: 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。

    Image sensors with embedded wells for accommodating light emitters
    7.
    发明授权
    Image sensors with embedded wells for accommodating light emitters 有权

    公开(公告)号：US11557625B2

    公开(公告)日：2023-01-17

    申请号：US16853684

    申请日：2020-04-20

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chia-Ying Liu ,  Wu-Zang Yang ,  Chia-Jung Liu ,  Ming Zhang ,  Yin Qian ,  Alireza Bonakdar

    IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/14 ,  H01L31/0352

    Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.

    Self-aligned isolation structures and light filters
    9.
    发明授权
    Self-aligned isolation structures and light filters 有权
    自对准隔离结构和滤光片

    公开(公告)号：US09520431B2

    公开(公告)日：2016-12-13

    申请号：US14505923

    申请日：2014-10-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

    IPC: H01L27/00 ,  H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

    Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

    Abstract translation: 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。

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