公开(公告)号：US20220085254A1

公开(公告)日：2022-03-17

申请号：US17523828

申请日：2021-11-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Juanita Kurtin ,  Brian Theobald ,  Matthew J. Carillo ,  Oun-Ho Park ,  Georgeta Masson ,  Steven M. Hughes

IPC: H01L33/50 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  C01B19/00 ,  B82Y30/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/56

Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

公开(公告)号：US20210296542A1

公开(公告)日：2021-09-23

申请号：US16822398

申请日：2020-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joseph Treadway ,  Erik Johansson ,  Brian Theobald

IPC: H01L33/50 ,  H01L33/00

Abstract: A structure and a method for producing a structure are disclosed. In an embodiment a structure includes at least one semiconductor structure comprising at least one semiconductor nanocrystal and a high-density element for increasing a density of the structure, wherein a density of the high-density element is greater than a density of silica, and wherein the structure is configured to emit light.

公开(公告)号：US20200255733A1

公开(公告)日：2020-08-13

申请号：US16270528

申请日：2019-02-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Weiwen Zhao ,  Juanita N. Kurtin ,  Joseph A. Treadway ,  Brian Theobald

IPC: C09K11/88 ,  H01L33/50 ,  C09K11/02

Abstract: A method for fabricating a connected network of oxide-coated semiconductor structure, comprising: preparing a first solution comprising a nanocrystalline material and a first solvent; preparing a second solution comprising a surfactant and a second solvent; adding the first solution and a bifunctional linker to the second solution, thereby preparing a third solution; adding a catalyst, water and a silicate to the third solution; thereby preparing a connected network of oxide-coated semiconductor structure; wherein the ratio of the water to surfactant is more than 3.5. Furthermore, an oxide-coated semiconductor structure and a light source comprising an oxide-coated semiconductor structure are described herein.

公开(公告)号：US12291661B2

公开(公告)日：2025-05-06

申请号：US17560083

申请日：2021-12-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Chen ,  Brian Theobald ,  Joseph Treadway

IPC: C09K11/02 ,  C09K11/08 ,  H10H20/851

Abstract: A quantum dot structure is provided, the quantum dot structure comprising: a nanocrystalline core from a first semiconductor material, a nanocrystalline shell from a second semiconductor material on the nanocrystalline core, at least one encapsulation layer on the nanocrystalline shell, wherein functional groups are present within the at least one encapsulation layer and/or on the surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner. Further, a method for producing a quantum dot structure and a light emitting device are provided.

公开(公告)号：US20230193121A1

公开(公告)日：2023-06-22

申请号：US17560083

申请日：2021-12-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Chen ,  Brian Theobald ,  Joseph Treadway

IPC: C09K11/02 ,  H01L33/50 ,  C09K11/06

CPC classification number: C09K11/025 ,  H01L33/502 ,  C09K11/06 ,  C09K2211/1018

Abstract: A quantum dot structure is provided, the quantum dot structure comprising: a nanocrystalline core from a first semiconductor material, a nanocrystalline shell from a second semiconductor material on the nanocrystalline core, at least one encapsulation layer on the nanocrystalline shell, wherein functional groups are present within the at least one encapsulation layer and/or on the surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner. Further, a method for producing a quantum dot structure and a light emitting device are provided.

公开(公告)号：US11205741B2

公开(公告)日：2021-12-21

申请号：US16052515

申请日：2018-08-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Juanita Kurtin ,  Brian Theobald ,  Matthew J. Carillo ,  Oun-Ho Park ,  Georgeta Masson ,  Steven M. Hughes

IPC: H01L33/50 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  C01B19/00 ,  B82Y30/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/56 ,  B82Y40/00 ,  B82Y20/00

Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

公开(公告)号：US11053435B2

公开(公告)日：2021-07-06

申请号：US16230995

申请日：2018-12-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Georgeta Masson ,  Kari N. Haley ,  Brian Theobald ,  Benjamin Daniel Mangum ,  Juanita N. Kurtin

IPC: C09K11/02 ,  C08K3/10 ,  C08K9/10 ,  C09K11/08 ,  H01L33/50 ,  B82Y40/00 ,  B82Y30/00

Abstract: Quantum dot delivery methods are described. In a first example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles. The method also involves forming a dispersion of the plurality of nano-particles in a medium for delivery or storage, wherein the medium is free of organic solvent. In a second example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles in an organic solvent. The method also involves drying the plurality of nano-particles for delivery or storage, the drying removing entirely all of the organic solvent.

公开(公告)号：US12107197B2

公开(公告)日：2024-10-01

申请号：US17523828

申请日：2021-11-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Juanita Kurtin ,  Brian Theobald ,  Matthew J. Carillo ,  Oun-Ho Park ,  Georgeta Masson ,  Steven M. Hughes

IPC: H01L33/50 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/00 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/00 ,  H01L33/06 ,  H01L33/56

CPC classification number: H01L33/502 ,  B82Y30/00 ,  C01B19/007 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/005 ,  H01L33/06 ,  H01L33/56 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0083 ,  Y10S977/744 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/89 ,  Y10S977/95

Abstract: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

公开(公告)号：US11676749B2

公开(公告)日：2023-06-13

申请号：US17349971

申请日：2021-06-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Robert Fitzmorris ,  Brian Theobald

IPC: H01F1/11 ,  C01F7/02 ,  C01G49/08 ,  C09K11/56 ,  C09K11/88 ,  H01F1/00 ,  H01L33/50 ,  B82Y20/00 ,  B82Y25/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: H01F1/11 ,  C01F7/02 ,  C01G49/08 ,  C09K11/565 ,  C09K11/883 ,  H01F1/0063 ,  H01L33/502 ,  B82Y20/00 ,  B82Y25/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/42 ,  H01L2933/0041

Abstract: A wavelength converter material and a method of A method of preparing a wavelength converter material may include providing an optionally oxide coated phosphor material, mixing the optionally oxide coated phosphor material with an optionally oxide coated paramagnetic nanoparticle, coating the optionally oxide coated phosphor material and the optionally oxide coated paramagnetic nanoparticle with an oxide coating, thereby preparing a coated phosphor-nanoparticle particle, and separating the coated phosphor-nanoparticle particle, thereby preparing a wavelength converter material. The separating of the coated phosphor-nanoparticle particle may be manipulated by applying a magnetic field.
Furthermore, a wavelength converter material, as well as a light emitting diode are described herein.

公开(公告)号：US11508880B2

公开(公告)日：2022-11-22

申请号：US16822398

申请日：2020-03-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joseph Treadway ,  Erik Johansson ,  Brian Theobald

IPC: H01L33/50 ,  H01L33/00

Abstract: A structure and a method for producing a structure are disclosed. In an embodiment a structure includes at least one semiconductor structure comprising at least one semiconductor nanocrystal and a high-density element for increasing a density of the structure, wherein a density of the high-density element is greater than a density of silica, and wherein the structure is configured to emit light.