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公开(公告)号：US10777711B2
公开(公告)日：2020-09-15
申请号：US15951897
申请日：2018-04-12
Inventor： Kazuhiko Yamanaka , Hideki Kasugai , Hirotaka Ueno , Kimihiro Murakami
IPC: H01L33/50 , F21V29/502 , F21S2/00 , F21V7/22 , F21S41/176 , F21S41/16 , H01L33/00 , H01L33/60 , H01L33/62 , G02B5/02
Abstract: A light emitting device includes a wavelength conversion element, and an excitation light source which radiates excitation light to the wavelength conversion element. The wavelength conversion element includes a support member having a supporting surface, and a wavelength conversion member disposed on the supporting surface so as to be contained within the support member when the support member is viewed from the supporting surface side. An outer peripheral region on the support member, which is an outer peripheral portion of an arrangement region including the wavelength conversion member and is exposed from the wavelength conversion member, includes a light absorbing portion which can absorb first light having same wavelength as the excitation light or a light scattering portion which can scatter the first light. The arrangement region includes a reflective member which is disposed between the wavelength conversion member and the support member, and is different from the support member.
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公开(公告)号：US12220167B2
公开(公告)日：2025-02-11
申请号：US17773778
申请日：2020-08-28
Inventor： Hideki Kasugai , Kenji Narita
Abstract: A hair cutting device of the present disclosure comprises an optical waveguide and a holding member that holds the optical waveguide. The optical waveguide comprises a light irradiator. The light irradiator irradiates hair protruding from skin with light to cut the hair. The holding member holds the optical waveguide in such a way that the light irradiator is exposed from at least one surface. As a result, even when the hair or the skin comes in contact with the light irradiator, misalignment or the like of the optical waveguide hardly occurs. This results in the improved hair cutting device being provided.
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Patent Agency Ranking
公开(公告)号：US10447005B2
公开(公告)日：2019-10-15
申请号：US15950846
申请日：2018-04-11
Inventor： Kazuhiko Yamanaka , Kiyoshi Morimoto , Hideki Kasugai , Kazuyuki Matsumura , Hideo Yamaguchi , Nobuyasu Suzuki
Abstract: A light source device includes: a semiconductor light-emitting device including a flat-shaped base having a first main surface on a first side and a second main surface and a semiconductor light-emitting element disposed on the first side; a first fixing component having a first through-hole and a first pressing surface that presses the first main surface; and a second fixing component having a second through-hole and a second pressing surface that presses the second main surface. The base is fixed between the first and second pressing surfaces by an engagement between a first inner surface surrounding the first through-hole of the first fixing component and a second outer surface of the second fixing component. A distance between the first and second pressing surfaces is smaller than or equal to a thickness of the base, and a void is formed lateral to the base between the first and second pressing surfaces.
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公开(公告)号：US09214788B2
公开(公告)日：2015-12-15
申请号：US14579593
申请日：2014-12-22
Inventor： Masao Kawaguchi , Hideki Kasugai , Shinichiro Nozaki
IPC: H01S5/00 , H01S5/34 , H01L33/04 , H01S5/20 , H01S5/343 , B82Y20/00 , H01S5/32 , H01L33/10 , H01L33/32 , H01S5/022 , H01S5/183
CPC classification number: H01S5/3425 , B82Y20/00 , H01L33/04 , H01L33/10 , H01L33/32 , H01S5/022 , H01S5/18305 , H01S5/18361 , H01S5/2031 , H01S5/3216 , H01S5/34333
Abstract: A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm−3, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.
Abstract translation: 半导体发光元件包括n型导光层，其包含III族氮化物半导体，有源层和p型导光层，其中n型导光层包括半导体超晶格层，其为 堆叠的超晶格层，半导体超晶格层具有其中III族氮化物半导体A和III族氮化物半导体B交替堆叠的结构，每个半晶体A和每个半导体B堆叠在每个超晶格层中， 关系式Eg（A）> Eg（B）成立，半导体A是含有AlInN的膜，该膜含有氧浓度为1×10 18 cm -3以上的氧（O），半导体A的膜厚为 至多5nm，并且在超晶格层的层叠方向上注入电流。
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公开(公告)号：US12239199B2
公开(公告)日：2025-03-04
申请号：US17776525
申请日：2020-11-05
Inventor： Hideki Kasugai
Abstract: A hair cutting member includes an optical waveguide, a connecting member, and a bonding member. The optical waveguide includes a core and a cladding that covers at least a portion of the core. The optical waveguide is disposed so as to emit light to hair growing on a skin. The connecting member retains an end of the optical waveguide. The bonding member bonds the optical waveguide and the connecting member to each other. The core is disposed off-center toward the outer circumference of the cladding. When viewed from an end face of the connecting member, a first distance between a center of the end face and an optical axis of the core is shorter than a second distance between the center of the end face and a center of the cladding. The technology of the present disclosure makes it possible to adjust the optical system of a hair cutting device easily.
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公开(公告)号：US11028988B2
公开(公告)日：2021-06-08
申请号：US16184125
申请日：2018-11-08
Inventor： Kazuhiko Yamanaka , Hideki Kasugai
IPC: H01L33/50 , G02B5/02 , G02B27/10 , F21S41/16 , F21S41/32 , F21S41/20 , F21V9/38 , F21S45/70 , F21S41/176 , F21S41/19 , F21S41/39 , F21V9/32 , H01S5/00 , F21S41/365 , F21V9/45 , F21V13/14 , F21V7/24 , H01S5/02326 , F21Y115/30 , H01S5/0683 , H01S5/068 , H01S5/323 , H01S5/02251 , H01S5/02255
Abstract: A light source device includes a semiconductor light-emitting device which emits coherent excitation light, and a wavelength conversion element which is spaced from the semiconductor light-emitting device, generates fluorescence by converting the wavelength of the excitation light emitted from semiconductor light-emitting device, and generates scattered light by scattering the excitation light. The wavelength conversion element includes a support member, and a wavelength converter disposed on the support member. The wavelength converter includes a first wavelength converter, and a second wavelength converter which is disposed around the first wavelength converter to surround the first wavelength converter in a top view of the surface of the support member on which the wavelength converter is disposed. The ratio of the intensity of fluorescence to that of scattered light is lower in the second wavelength converter than in the first wavelength converter.
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公开(公告)号：US09644803B2
公开(公告)日：2017-05-09
申请号：US14693909
申请日：2015-04-23
Inventor： Hideki Kasugai , Kazuhiko Yamanaka , Kiyoshi Morimoto
IPC: F21K99/00 , G02B26/00 , G03B21/20 , G03B33/08 , H04N9/31 , F21V9/16 , F21V14/08 , G02B5/30 , G02B27/14
CPC classification number: F21K9/64 , F21V9/30 , F21V14/08 , G02B5/3025 , G02B26/008 , G02B27/141 , G02B27/286 , G02B27/48 , G03B21/204 , G03B21/2073 , G03B33/08 , H04N9/3114 , H04N9/3158
Abstract: In a light source in which a semiconductor luminescence element and a phosphor are combined, red light having high color purity is efficiently radiated. The light source includes: a semiconductor luminescence element; a fixed or rotatable first wavelength converting unit; and a rotatable second wavelength converting unit. The second wavelength converting unit includes: a second wavelength converting region that absorbs output light emitted from the semiconductor luminescence element and radiates light having a second wavelength different from that of the output light; and a transmission region that transmits the output light. The first wavelength converting unit absorbs the output light to radiate light having a first wavelength longer than the second wavelength of the light, and the light having the first wavelength is transmitted through the transmission region.
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