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63 条记录 (耗时 0.031 秒)

    Semiconductor substrate processing chamber and accessory attachment interfacial structure
    1.
    发明授权
    Semiconductor substrate processing chamber and accessory attachment interfacial structure 失效
    半导体衬底处理室和附件附件界面结构

    公开(公告)号：US07192487B2

    公开(公告)日：2007-03-20

    申请号：US10695727

    申请日：2003-10-28

    申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

    发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/301

    CPC分类号： H01L21/67126 ,  C23C16/4409 ,  C23C16/54 ,  Y10S414/139

    摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

    摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。

    CVD apparatuses and methods of forming a layer over a semiconductor substrate
    2.
    发明授权
    CVD apparatuses and methods of forming a layer over a semiconductor substrate 失效
    CVD装置以及在半导体基板上形成层的方法

    公开(公告)号：US06849133B2

    公开(公告)日：2005-02-01

    申请号：US10704316

    申请日：2003-11-06

    申请人： Philip H. Campbell ,  Craig M. Carpenter ,  Ross S. Dando ,  Kevin T. Hamer

    发明人： Philip H. Campbell ,  Craig M. Carpenter ,  Ross S. Dando ,  Kevin T. Hamer

    IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/316 ,  C23C16/00

    CPC分类号： C23C16/45519 ,  C23C16/45544 ,  C23C16/45568 ,  H01L21/31604

    摘要： The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through the opening of a first of the inlet ports. At least a portion of the first material is deposited onto the substrate. The reaction chamber is purged by flowing an inert material into the reaction chamber through the opening of a second of the inlet ports. The inert material passes from the opening and through a distribution head that is positioned within the reaction chamber between the first and second openings. A second material can then be flowed into the chamber through an opening in a third inlet port and deposited onto the substrate. The invention also includes a chemical vapor deposition apparatus.

    摘要翻译： 本发明包括在反应室内设置在半导体衬底上形成层的方法。 腔室具有至少两个终止于开口的入口端口。 第一材料通过第一入口端口的开口流入反应室。 第一材料的至少一部分沉积到基底上。 通过使第二入口端口的开口将惰性物质流入反应室来清除反应室。 惰性材料从开口经过位于第一和第二开口之间的位于反应室内的分配头。 然后可以通过第三入口中的开口将第二材料流入腔室并沉积到衬底上。 本发明还包括化学气相沉积设备。

    Deposition methods utilizing microwave excitation
    5.
    发明授权
    Deposition methods utilizing microwave excitation 失效
    利用微波激发的沉积方法

    公开(公告)号：US07422986B2

    公开(公告)日：2008-09-09

    申请号：US11519430

    申请日：2006-09-11

    申请人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell

    发明人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell

    IPC分类号： H01L21/26

    CPC分类号： C23C16/45536 ,  C23C16/45525 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01Q21/0087

    摘要： The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.

    摘要翻译： 本发明包括具有反应室的沉积设备和室外的微波源。 微波源构造成将微波辐射引导到腔室。 该室包括一个窗口，通过该窗口，微波源的微波辐射可以通过该窗口进入腔室。 本发明还包括沉积方法（例如CVD或ALD方法），其中在将材料沉积在反应室内的衬底上时，利用微波辐射来激活反应室内的至少一个组分。

    Chemical vapor deposition apparatus
    7.
    发明授权
    Chemical vapor deposition apparatus 失效
    化学气相沉积装置

    公开(公告)号：US07270715B2

    公开(公告)日：2007-09-18

    申请号：US10695726

    申请日：2003-10-28

    申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

    发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

    IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

    CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/54 ,  Y10S156/914 ,  Y10S414/139

    摘要： A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.

    摘要翻译： 化学气相沉积设备包括低于大气压的基底传送室。 至少部分地由室侧壁限定低于大气压的沉积室。 腔室侧壁中的通道从传送室延伸到沉积室。 半导体衬底通过用于沉积处理的通道进入和离开沉积室。 机械闸门包括在沉积室和侧壁通道中的至少一个中，并且构造成打开和关闭至腔室的通道的至少一部分。 化学气相沉积设备的腔室衬垫设备在室内形成沉积子室。 腔室衬套装置的至少一部分选择性地可移动以完全暴露并完全覆盖到腔室的通道。

    Chemical vapor deposition apparatus
    9.
    发明授权
    Chemical vapor deposition apparatus 失效
    化学气相沉积装置

    公开(公告)号：US06814813B2

    公开(公告)日：2004-11-09

    申请号：US10132767

    申请日：2002-04-24

    申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

    发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

    IPC分类号： C23C1600

    CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/54 ,  Y10S156/914 ,  Y10S414/139

    摘要： A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.

    摘要翻译： 化学气相沉积设备包括低于大气压的基底传送室。 至少部分地由室侧壁限定低于大气压的沉积室。 腔室侧壁中的通道从传送室延伸到沉积室。 半导体衬底通过用于沉积处理的通道进入和离开沉积室。 机械闸门包括在沉积室和侧壁通道中的至少一个中，并且构造成打开和关闭至腔室的通道的至少一部分。 化学气相沉积设备的腔室衬垫设备在室内形成沉积子室。 腔室衬套装置的至少一部分选择性地可移动以完全暴露并完全覆盖到腔室的通道。

    Method of replacing at least a portion of a semiconductor substrate deposition chamber liner
    10.
    发明授权
    Method of replacing at least a portion of a semiconductor substrate deposition chamber liner 有权
    替换半导体衬底沉积室衬里的至少一部分的方法

    公开(公告)号：US06613587B1

    公开(公告)日：2003-09-02

    申请号：US10121302

    申请日：2002-04-11

    申请人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

    发明人： Craig M. Carpenter ,  Ross S. Dando ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

    IPC分类号： H01L2100

    CPC分类号： C23C16/54 ,  C23C16/4401

    摘要： A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrates passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.

    摘要翻译： 一种方法包括通过将沉积室衬套通过通道传送到沉积室，通过半导体衬底通过其进入和离开室进行沉积处理，从沉积室去除至少一块沉积室衬里。 通过使替换通过所述通道，将移除的沉积室衬垫件的替代物提供到腔室中。 衬套装置包括多个片段，当组装在所选择的半导体衬底沉积处理器室中时，其被限定为限定所述半导体衬底沉积处理器室的所有内壁表面的至少大部分部分暴露于腔室内的沉积材料。 至少一些片的尺寸被设计成完全通过衬底通道到半导体衬底通过其进入和离开室以进行沉积处理的室。